Buy |
PDF |
Photo |
Part Number |
Manufacturer |
Description |
Packaging | Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case | Supplier Device Package |
|
|
|
SPP80N08S2-07 |
Infineon Technologies |
MOSFET N-CH 75V 80A TO-220 |
Tube | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 75V | 80A (Tc) | 7.4 mOhm @ 66A, 10V | 4V @ 250µA | 180nC @ 10V | 6130pF @ 25V | 300W | Through Hole | TO-220-3 | P-TO220-3 |
|
|
|
RJK0456DPB-00#J5 |
Renesas Electronics America |
MOSFET N-CH 40V LFPAK |
Cut Tape (CT) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 40V | 50A (Ta) | 3.2 mOhm @ 25A, 10V | - | 39nC @ 10V | 3000pF @ 10V | 65W | Surface Mount | SC-100, SOT-669 | LFPAK |
|
|
|
SPP80N08S2L-07 |
Infineon Technologies |
MOSFET N-CH 75V 80A TO-220 |
Tube | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 75V | 80A (Tc) | 7.1 mOhm @ 67A, 10V | 2V @ 250µA | 233nC @ 10V | 6820pF @ 25V | 300W | Through Hole | TO-220-3 | P-TO220-3 |
|
|
|
FDMS8848NZ |
Fairchild Semiconductor |
MOSFET N-CH 40V 22.8A POWER56 |
Tape & Reel (TR) | PowerTrench® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 40V | 22.8A (Ta), 49A (Tc) | 3.1 mOhm @ 22.8A, 10V | 3V @ 250µA | 152nC @ 10V | 8075pF @ 20V | 2.5W | Surface Mount | 8-PQFN, Power56 | Power56 |
|
|
|
RJK0456DPB-00#J5 |
Renesas Electronics America |
MOSFET N-CH 40V LFPAK |
Digi-Reel® | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 40V | 50A (Ta) | 3.2 mOhm @ 25A, 10V | - | 39nC @ 10V | 3000pF @ 10V | 65W | Surface Mount | SC-100, SOT-669 | LFPAK |
|
|
|
FDMS8848NZ |
Fairchild Semiconductor |
MOSFET N-CH 40V 22.8A POWER56 |
Cut Tape (CT) | PowerTrench® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 40V | 22.8A (Ta), 49A (Tc) | 3.1 mOhm @ 22.8A, 10V | 3V @ 250µA | 152nC @ 10V | 8075pF @ 20V | 2.5W | Surface Mount | 8-PQFN, Power56 | Power56 |
|
|
|
SPP80N10L |
Infineon Technologies |
MOSFET N-CH 100V 80A TO-220 |
Tube | SIPMOS® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 100V | 80A (Tc) | 14 mOhm @ 58A, 10V | 2V @ 2mA | 240nC @ 10V | 4540pF @ 25V | 250W | Through Hole | TO-220-3 | P-TO220-3 |
|
|
|
SIR814DP-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 40V 40.6A 8SO |
Tape & Reel (TR) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 40V | 40.6A (Ta) | 2.1 mOhm @ 20A, 10V | 2.3V @ 250µA | 86nC @ 10V | 3800pF @ 20V | 6.25W | Surface Mount | 8-PowerTDFN | PowerPAK; SO-8 |
|
|
|
SPU02N60S5 |
Infineon Technologies |
MOSFET N-CH 600V 1.8A TO-251 |
Tube | CoolMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 600V | 1.8A (Tc) | 3 Ohm @ 1.1A, 10V | 5.5V @ 80µA | 9.5nC @ 10V | 240pF @ 25V | 25W | Through Hole | TO-251-3 Long Leads, IPak, TO-251AB | PG-TO251-3 |
|
|
|
FDMS8848NZ |
Fairchild Semiconductor |
MOSFET N-CH 40V 22.8A POWER56 |
Digi-Reel® | PowerTrench® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 40V | 22.8A (Ta), 49A (Tc) | 3.1 mOhm @ 22.8A, 10V | 3V @ 250µA | 152nC @ 10V | 8075pF @ 20V | 2.5W | Surface Mount | 8-PQFN, Power56 | Power56 |
|
|
|
IRFH5110TRPBF |
International Rectifier |
MOSFET N-CH 100V 11A 8-PQFN |
Tape & Reel (TR) | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 100V | 11A (Ta), 63A (Tc) | 12.4 mOhm @ 37A, 10V | 4V @ 100µA | 72nC @ 10V | 3152pF @ 25V | 3.6W | Surface Mount | 8-PowerVQFN | PQFN (5x6) |
|
|
|
FDB12N50UTM_WS |
Fairchild Semiconductor |
MOSFET N-CH 500V 10A D2PAK |
Tape & Reel (TR) | FRFET™ | MOSFET N-Channel, Metal Oxide | Standard | 500V | 10A (Tc) | 800 mOhm @ 5A, 10V | 5V @ 250µA | 30nC @ 10V | 1395pF @ 25V | 165W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK |
|
|
|
SPU04N60S5 |
Infineon Technologies |
MOSFET N-CH 600V 4.5A TO-251 |
Tube | CoolMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 600V | 4.5A (Tc) | 950 mOhm @ 2.8A, 10V | 5.5V @ 200µA | 22.9nC @ 10V | 580pF @ 25V | 50W | Through Hole | TO-251-3 Long Leads, IPak, TO-251AB | PG-TO251-3 |
|
|
|
NP60N03SUG-E1-AY |
Renesas Electronics America |
MOSFET N-CH 30V 60A TO-252 |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 60A (Tc) | 3.8 mOhm @ 30A, 10V | 4V @ 250µA | 135nC @ 10V | 7500pF @ 25V | 1.2W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (MP-3ZK) |
|
|
|
FDB12N50UTM_WS |
Fairchild Semiconductor |
MOSFET N-CH 500V 10A D2PAK |
Cut Tape (CT) | FRFET™ | MOSFET N-Channel, Metal Oxide | Standard | 500V | 10A (Tc) | 800 mOhm @ 5A, 10V | 5V @ 250µA | 30nC @ 10V | 1395pF @ 25V | 165W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK |
|
|
|
NP60N03SUG-E1-AY |
Renesas Electronics America |
MOSFET N-CH 30V 60A TO-252 |
Cut Tape (CT) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 60A (Tc) | 3.8 mOhm @ 30A, 10V | 4V @ 250µA | 135nC @ 10V | 7500pF @ 25V | 1.2W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (MP-3ZK) |
|
|
|
SPU07N60S5 |
Infineon Technologies |
MOSFET N-CH 600V 7.3A TO-251 |
Tube | CoolMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 600V | 7.3A (Tc) | 600 mOhm @ 4.6A, 10V | 5.5V @ 350µA | 35nC @ 10V | 970pF @ 25V | 83W | Through Hole | TO-251-3 Long Leads, IPak, TO-251AB | PG-TO251-3 |
|
|
|
FDB12N50UTM_WS |
Fairchild Semiconductor |
MOSFET N-CH 500V 10A D2PAK |
Digi-Reel® | FRFET™ | MOSFET N-Channel, Metal Oxide | Standard | 500V | 10A (Tc) | 800 mOhm @ 5A, 10V | 5V @ 250µA | 30nC @ 10V | 1395pF @ 25V | 165W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK |
|
|
|
NP60N03SUG-E1-AY |
Renesas Electronics America |
MOSFET N-CH 30V 60A TO-252 |
Digi-Reel® | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 60A (Tc) | 3.8 mOhm @ 30A, 10V | 4V @ 250µA | 135nC @ 10V | 7500pF @ 25V | 1.2W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (MP-3ZK) |
|
|
|
SPU11N10 |
Infineon Technologies |
MOSFET N-CH 100V 10.5A IPAK |
Tube | SIPMOS® | MOSFET N-Channel, Metal Oxide | Standard | 100V | 10.5A (Tc) | 170 mOhm @ 7.8A, 10V | 4V @ 21µA | 18.3nC @ 10V | 400pF @ 25V | 50W | Through Hole | TO-251-3 Long Leads, IPak, TO-251AB | P-TO251-3 |
|
|
|
FDD5N50FTM_WS |
Fairchild Semiconductor |
MOSFET N-CH 500V 3.5A DPAK |
Tape & Reel (TR) | UniFET™ | MOSFET N-Channel, Metal Oxide | Standard | 500V | 3.5A (Tc) | 1.55 Ohm @ 1.75A, 10V | 5V @ 250µA | 15nC @ 10V | 650pF @ 25V | 40W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak |
|
|
|
IRF610STRLPBF |
Vishay Siliconix |
MOSFET N-CH 200V 3.3A D2PAK |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Standard | 200V | 3.3A (Tc) | 1.5 Ohm @ 2A, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 3W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK |
|
|
|
SPU18P06P |
Infineon Technologies |
MOSFET P-CH 60V 18.6A TO-251 |
Tube | SIPMOS® | MOSFET P-Channel, Metal Oxide | Standard | 60V | 18.6A (Tc) | 130 mOhm @ 13.2A, 10V | 4V @ 1mA | 33nC @ 10V | 860pF @ 25V | 80W | Through Hole | TO-251-3 Long Leads, IPak, TO-251AB | P-TO251-3 |
|
|
|
IRF610STRRPBF |
Vishay Siliconix |
MOSFET N-CH 200V 3.3A D2PAK |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Standard | 200V | 3.3A (Tc) | 1.5 Ohm @ 2A, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 3W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
|
|
|
FDD5N50FTM_WS |
Fairchild Semiconductor |
MOSFET N-CH 500V 3.5A DPAK |
Cut Tape (CT) | UniFET™ | MOSFET N-Channel, Metal Oxide | Standard | 500V | 3.5A (Tc) | 1.55 Ohm @ 1.75A, 10V | 5V @ 250µA | 15nC @ 10V | 650pF @ 25V | 40W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak |
|
|
|
SPU30N03S2-08 |
Infineon Technologies |
MOSFET N-CH 30V 30A IPAK |
Tube | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 30V | 30A (Tc) | 8.2 mOhm @ 30A, 10V | 4V @ 85µA | 47nC @ 10V | 2170pF @ 25V | 125W | Through Hole | TO-251-3 Long Leads, IPak, TO-251AB | P-TO251-3 |
|
|
|
FDD5N50FTM_WS |
Fairchild Semiconductor |
MOSFET N-CH 500V 3.5A DPAK |
Digi-Reel® | UniFET™ | MOSFET N-Channel, Metal Oxide | Standard | 500V | 3.5A (Tc) | 1.55 Ohm @ 1.75A, 10V | 5V @ 250µA | 15nC @ 10V | 650pF @ 25V | 40W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak |
|
|
|
IRF614STRRPBF |
Vishay Siliconix |
MOSFET N-CH 250V 2.7A D2PAK |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Standard | 250V | 2.7A (Tc) | 2 Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 3.1W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
|
|
|
SPU30P06P |
Infineon Technologies |
MOSFET P-CH 60V 30A IPAK |
Tube | SIPMOS® | MOSFET P-Channel, Metal Oxide | Standard | 60V | 30A (Tc) | 75 mOhm @ 21.5A, 10V | 4V @ 1.7mA | 48nC @ 10V | 1535pF @ 25V | 125W | Through Hole | TO-251-3 Long Leads, IPak, TO-251AB | P-TO251-3 |
|
|
|
FCD4N60TM_WS |
Fairchild Semiconductor |
MOSFET N-CH 600V 3.9A DPAK |
Tape & Reel (TR) | SuperFET™ | MOSFET N-Channel, Metal Oxide | Standard | 600V | 3.9A (Tc) | 1.2 Ohm @ 2A, 10V | 5V @ 250µA | 16.6nC @ 10V | 540pF @ 25V | 50W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak |
|
|
|
IRF530STRRPBF |
Vishay Siliconix |
MOSFET N-CH 100V 14A D2PAK |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Standard | 100V | 14A | 160 mOhm @ 8.4A, 10V | 4V @ 250µA | 26nC @ 10V | 670pF @ 25V | 3.7W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) |
|
|
|
IRF530STRRPBF |
Vishay Siliconix |
MOSFET N-CH 100V 14A D2PAK |
Cut Tape (CT) | - | MOSFET N-Channel, Metal Oxide | Standard | 100V | 14A | 160 mOhm @ 8.4A, 10V | 4V @ 250µA | 26nC @ 10V | 670pF @ 25V | 3.7W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) |
|
|
|
FCD4N60TM_WS |
Fairchild Semiconductor |
MOSFET N-CH 600V 3.9A DPAK |
Cut Tape (CT) | SuperFET™ | MOSFET N-Channel, Metal Oxide | Standard | 600V | 3.9A (Tc) | 1.2 Ohm @ 2A, 10V | 5V @ 250µA | 16.6nC @ 10V | 540pF @ 25V | 50W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak |
|
|
|
FCD4N60TM_WS |
Fairchild Semiconductor |
MOSFET N-CH 600V 3.9A DPAK |
Digi-Reel® | SuperFET™ | MOSFET N-Channel, Metal Oxide | Standard | 600V | 3.9A (Tc) | 1.2 Ohm @ 2A, 10V | 5V @ 250µA | 16.6nC @ 10V | 540pF @ 25V | 50W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak |
|
|
|
IRF530STRRPBF |
Vishay Siliconix |
MOSFET N-CH 100V 14A D2PAK |
Digi-Reel® | - | MOSFET N-Channel, Metal Oxide | Standard | 100V | 14A | 160 mOhm @ 8.4A, 10V | 4V @ 250µA | 26nC @ 10V | 670pF @ 25V | 3.7W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) |
|
|
|
SPW11N60S5 |
Infineon Technologies |
MOSFET N-CH 600V 11A TO-247 |
Tube | CoolMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 600V | 11A (Tc) | 380 mOhm @ 7A, 10V | 5.5V @ 500µA | 54nC @ 10V | 1460pF @ 25V | 125W | Through Hole | TO-247-3 | PG-TO247-3 |
|
|
|
IRLZ44NSPBF |
International Rectifier |
MOSFET N-CH 55V 47A D2PAK |
Tube | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 55V | 47A (Tc) | 22 mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | 1700pF @ 25V | 3.8W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
|
|
|
FDS6688AS |
Fairchild Semiconductor |
MOSFET N-CH 30V 14.5A SO-8 |
Tape & Reel (TR) | PowerTrench® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 14.5A (Ta) | 6 mOhm @ 14.5A, 10V | 3V @ 250µA | 63nC @ 10V | 2510pF @ 15V | 1W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
SPW17N80C3A |
Infineon Technologies |
MOSFET N-CH 800V 17A TO-247 |
Tube | CoolMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 800V | 17A (Tc) | 290 mOhm @ 11A, 10V | 3.9V @ 1mA | 177nC @ 10V | 2320pF @ 25V | 208W | Through Hole | TO-247-3 | PG-TO247-3 |
|
|
|
IRLZ44NSTRRPBF |
International Rectifier |
MOSFET N-CH 55V 47A D2PAK |
Tape & Reel (TR) | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 55V | 47A (Tc) | 22 mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | 1700pF @ 25V | 3.8W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
|
|
|
FDS6688AS |
Fairchild Semiconductor |
MOSFET N-CH 30V 14.5A SO-8 |
Cut Tape (CT) | PowerTrench® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 14.5A (Ta) | 6 mOhm @ 14.5A, 10V | 3V @ 250µA | 63nC @ 10V | 2510pF @ 15V | 1W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
BSA223SP |
Infineon Technologies |
MOSFET P-CH 20V 390MA SC75 |
Tape & Reel (TR) | OptiMOS™ | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 20V | 390mA (Ta) | 1.2 Ohm @ 390mA, 4.5V | 1.2V @ 1.5µA | 0.62nC @ 4.5V | 56pF @ 15V | 250mW | Surface Mount | SC-75, SOT-416 | PG-SC-75 |
|
|
|
RJK0303DPB-00#J0 |
Renesas Electronics America |
MOSFET N-CH 30V 40A 5-LFPAK |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 40A (Ta) | 3.7 mOhm @ 20A, 10V | - | 23nC @ 4.5V | 3300pF @ 10V | 55W | Surface Mount | SC-100, SOT-669 | LFPAK |
|
|
|
FDS6688AS |
Fairchild Semiconductor |
MOSFET N-CH 30V 14.5A SO-8 |
Digi-Reel® | PowerTrench® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 14.5A (Ta) | 6 mOhm @ 14.5A, 10V | 3V @ 250µA | 63nC @ 10V | 2510pF @ 15V | 1W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
BSA223SP |
Infineon Technologies |
MOSFET P-CH 20V 390MA SC75 |
Cut Tape (CT) | OptiMOS™ | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 20V | 390mA (Ta) | 1.2 Ohm @ 390mA, 4.5V | 1.2V @ 1.5µA | 0.62nC @ 4.5V | 56pF @ 15V | 250mW | Surface Mount | SC-75, SOT-416 | PG-SC-75 |
|
|
|
SI7888DP-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH D-S 30V PPAK 8SOIC |
Tape & Reel (TR) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 9.4A (Ta) | 12 mOhm @ 12.4A, 10V | 2V @ 250µA | 10.5nC @ 5V | - | 1.8W | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
|
|
|
2SK2266(TE24R,Q) |
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 45A TO220SM |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 60V | 45A (Ta) | 30 mOhm @ 25A, 10V | 2V @ 1mA | 60nC @ 10V | 1800pF @ 10V | 65W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-220SM |
|
|
|
BSA223SP |
Infineon Technologies |
MOSFET P-CH 20V 390MA SC75 |
Digi-Reel® | OptiMOS™ | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 20V | 390mA (Ta) | 1.2 Ohm @ 390mA, 4.5V | 1.2V @ 1.5µA | 0.62nC @ 4.5V | 56pF @ 15V | 250mW | Surface Mount | SC-75, SOT-416 | PG-SC-75 |
|
|
|
SIE862DF-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH D-S 30V POLARPAK |
Tape & Reel (TR) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Standard | 30V | 30A (Ta), 50A (Tc) | 3.2 mOhm @ 20A, 10V | 2.2V @ 250µA | 75nC @ 10V | 3100pF @ 15V | 104W | Surface Mount | 10-PolarPAK® (U) | 10-PolarPAK® (U) |
|
|
|
BSC020N025S G |
Infineon Technologies |
MOSFET N-CH 25V 100A TDSON-8 |
Tape & Reel (TR) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 25V | 30A (Ta), 100A (Tc) | 2 mOhm @ 50A, 10V | 2V @ 110µA | 66nC @ 5V | 8290pF @ 15V | 104W | Surface Mount | 8-PowerTDFN | PG-TDSON-8 (5.15x6.15) |
|
|
|
NP90N03VHG-E1-AY |
Renesas Electronics America |
MOSFET N-CH 30V 90A TO-252 |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Standard | 30V | 90A | 3.2 mOhm @ 45A, 10V | 4V @ 250µA | 135nC @ 10V | 7500pF @ 25V | 1.2W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 |
|
|
|
2SK2376(Q) |
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 45A TO220FL |
Tube | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 60V | 45A (Ta) | 17 mOhm @ 25A, 10V | 2V @ 1mA | 110nC @ 10V | 3350pF @ 10V | 100W | Through Hole | TO-220-3, Short Tab | TO-220FL |
|
|
|
BSC020N025S G |
Infineon Technologies |
MOSFET N-CH 25V 100A TDSON-8 |
Cut Tape (CT) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 25V | 30A (Ta), 100A (Tc) | 2 mOhm @ 50A, 10V | 2V @ 110µA | 66nC @ 5V | 8290pF @ 15V | 104W | Surface Mount | 8-PowerTDFN | PG-TDSON-8 (5.15x6.15) |
|
|
|
2SK2803 |
Sanken |
MOSFET N-CH 450V TO-220F |
Bulk | - | MOSFET N-Channel, Metal Oxide | Standard | 450V | 3A (Ta) | 2.8 Ohm @ 1.5A, 10V | 4V @ 1mA | - | 340pF @ 10V | 30W | Through Hole | TO-220-3 Full Pack | TO-220F |
|
|
|
2SK3309(Q) |
Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 10A TO220FL |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 450V | 10A (Ta) | 650 mOhm @ 5A, 10V | 5V @ 1mA | 23nC @ 10V | 920pF @ 10V | 65W | Through Hole | TO-220-3, Short Tab | TO-220FL |
|
|
|
BSC020N025S G |
Infineon Technologies |
MOSFET N-CH 25V 100A TDSON-8 |
Digi-Reel® | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 25V | 30A (Ta), 100A (Tc) | 2 mOhm @ 50A, 10V | 2V @ 110µA | 66nC @ 5V | 8290pF @ 15V | 104W | Surface Mount | 8-PowerTDFN | PG-TDSON-8 (5.15x6.15) |
|
|
|
AUIRF3710ZSTRL |
International Rectifier |
MOSFET N-CH 100V 59A D2PAK |
Tape & Reel (TR) | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 100V | 59A (Tc) | 18 mOhm @ 35A, 10V | 4V @ 250µA | 120nC @ 10V | 2900pF @ 25V | 160W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK |
|
|
|
TK55D10J1(Q) |
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 55A TO220W |
Tube | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 100V | 55A (Ta) | 10.5 mOhm @ 27A, 10V | 2.3V @ 1mA | 110nC @ 10V | 5700pF @ 10V | 140W | Through Hole | TO-220-3 | TO-220(W) |
|
|
|
BSC029N025S G |
Infineon Technologies |
MOSFET N-CH 25V 100A TDSON-8 |
Tape & Reel (TR) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 25V | 24A (Ta), 100A (Tc) | 2.9 mOhm @ 50A, 10V | 2V @ 80µA | 41nC @ 5V | 5090pF @ 15V | 78W | Surface Mount | 8-PowerTDFN | PG-TDSON-8 (5.15x6.15) |
|
|
|
SIHB6N65E-GE3 |
Vishay Siliconix |
MOSFET N-CH 650V 7A D2PAK |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Standard | 650V | 7A (Tc) | 600 mOhm @ 3A, 10V | 4V @ 250µA | 48nC @ 10V | 820pF @ 100V | 78W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) |
|
|
|
TK60D08J1(Q) |
Toshiba Semiconductor and Storage |
MOSFET N-CH 75V 60A TO220W |
Tube | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 75V | 60A (Ta) | 7.8 mOhm @ 30A, 10V | 2.3V @ 1mA | 86nC @ 10V | 5450pF @ 10V | 140W | Through Hole | TO-220-3 | TO-220(W) |
|
|
|
BSC029N025S G |
Infineon Technologies |
MOSFET N-CH 25V 100A TDSON-8 |
Cut Tape (CT) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 25V | 24A (Ta), 100A (Tc) | 2.9 mOhm @ 50A, 10V | 2V @ 80µA | 41nC @ 5V | 5090pF @ 15V | 78W | Surface Mount | 8-PowerTDFN | PG-TDSON-8 (5.15x6.15) |
|
|
|
IRF9Z14STRLPBF |
Vishay Siliconix |
MOSFET P-CH 60V 6.7A D2PAK |
Tape & Reel (TR) | - | MOSFET P-Channel, Metal Oxide | Standard | 60V | 6.7A (Tc) | 500 mOhm @ 4A, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 3.7W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
|
|
|
TK70D06J1(Q) |
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 70A TO220W |
Tube | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 60V | 70A (Ta) | 6.4 mOhm @ 35A, 10V | 2.3V @ 1mA | 87nC @ 10V | 5450pF @ 10V | 140W | Through Hole | TO-220-3 | TO-220(W) |
|
|
|
BSC029N025S G |
Infineon Technologies |
MOSFET N-CH 25V 100A TDSON-8 |
Digi-Reel® | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 25V | 24A (Ta), 100A (Tc) | 2.9 mOhm @ 50A, 10V | 2V @ 80µA | 41nC @ 5V | 5090pF @ 15V | 78W | Surface Mount | 8-PowerTDFN | PG-TDSON-8 (5.15x6.15) |
|
|
|
IRFH5215TRPBF |
International Rectifier |
MOSFET N-CH 150V 5A PQFN |
Tape & Reel (TR) | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 150V | 5A (Ta), 27A (Tc) | 58 mOhm @ 16A, 10V | 5V @ 100µA | 32nC @ 10V | 1350pF @ 50V | 3.6W | Surface Mount | 8-VQFN Exposed Pad | PQFN (5x6) |
|
|
|
TPC6006-H(TE85L,F) |
Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 3.9A VS6 2-3T1A |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 40V | 3.9A (Ta) | 75 mOhm @ 1.9A, 10V | 2.3V @ 1mA | 4.4nC @ 10V | 251pF @ 10V | - | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) |
|
|
|
BSC048N025S G |
Infineon Technologies |
MOSFET N-CH 25V 89A TDSON-8 |
Tape & Reel (TR) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 25V | 19A (Ta), 89A (Tc) | 4.8 mOhm @ 50A, 10V | 2V @ 35µA | 21nC @ 5V | 2670pF @ 15V | 63W | Surface Mount | 8-PowerTDFN | PG-TDSON-8 (5.15x6.15) |
|
|
|
TPC6104(TE85L,F,M) |
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4.5A VS6 2-3T1A |
Tape & Reel (TR) | - | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 20V | 5.5A (Ta) | 40 mOhm @ 2.8A, 4.5V | 1.2V @ 200µA | 19nC @ 5V | 1430pF @ 10V | - | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) |
|
|
|
IRFH5220TRPBF |
International Rectifier |
MOSFET N-CH 200V 3.8A PQFN |
Tape & Reel (TR) | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 200V | 3.8A (Ta), 20A (Tc) | 99.9 mOhm @ 5.8A, 10V | 5V @ 100µA | 30nC @ 10V | 1380pF @ 50V | 3.6W | Surface Mount | 8-VQFN Exposed Pad | PQFN (5x6) |
|
|
|
BSC048N025S G |
Infineon Technologies |
MOSFET N-CH 25V 89A TDSON-8 |
Cut Tape (CT) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 25V | 19A (Ta), 89A (Tc) | 4.8 mOhm @ 50A, 10V | 2V @ 35µA | 21nC @ 5V | 2670pF @ 15V | 63W | Surface Mount | 8-PowerTDFN | PG-TDSON-8 (5.15x6.15) |
|
|
|
SIHU7N60E-E3 |
Vishay Siliconix |
MOSFET N CH 600V 7A TO-251 |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Standard | 600V | 7A (Tc) | 600 mOhm @ 3.5A, 10V | 4V @ 250µA | 40nC @ 10V | 680pF @ 100V | 78W | Through Hole | TO-251-3 Long Leads, IPak, TO-251AB | TO-251 |
|
|
|
TPC6107(TE85L,F,M) |
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4.5A VS6 2-3T1A |
Tape & Reel (TR) | - | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 20V | 4.5A (Ta) | 55 mOhm @ 2.2A, 4.5V | 1.2V @ 200µA | 9.8nC @ 5V | 680pF @ 10V | - | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) |
|
|
|
BSC048N025S G |
Infineon Technologies |
MOSFET N-CH 25V 89A TDSON-8 |
Digi-Reel® | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 25V | 19A (Ta), 89A (Tc) | 4.8 mOhm @ 50A, 10V | 2V @ 35µA | 21nC @ 5V | 2670pF @ 15V | 63W | Surface Mount | 8-PowerTDFN | PG-TDSON-8 (5.15x6.15) |
|
|
|
BUK7K32-100EX |
NXP Semiconductors |
MOSFET N-CH 100V 56LFPAK |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Standard | 100V | - | - | - | - | - | - | Surface Mount | SC-100, SOT-669, 4-LFPAK | LFPAK56, Power-SO8 |
|
|
|
BSC059N03S G |
Infineon Technologies |
MOSFET N-CH 30V 73A TDSON-8 |
Tape & Reel (TR) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 17.5A (Ta), 73A (Tc) | 5.5 mOhm @ 50A, 10V | 2V @ 35µA | 21nC @ 5V | 2670pF @ 15V | 48W | Surface Mount | 8-PowerTDFN | PG-TDSON-8 (5.15x6.15) |
|
|
|
TPC8014(TE12L,Q,M) |
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 11A SOP8 2-6J1B |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 11A (Ta) | 14 mOhm @ 5.5A, 10V | 2.5V @ 1mA | 39nC @ 10V | 1860pF @ 10V | - | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) |
|
|
|
IRLZ24SPBF |
Vishay Siliconix |
MOSFET N-CH 60V 17A D2PAK |
Tube | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 60V | 17A (Tc) | 100 mOhm @ 10A, 5V | 2V @ 250µA | 18nC @ 5V | 870pF @ 25V | 3.7W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
|
|
|
BSC059N03S G |
Infineon Technologies |
MOSFET N-CH 30V 73A TDSON-8 |
Cut Tape (CT) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 17.5A (Ta), 73A (Tc) | 5.5 mOhm @ 50A, 10V | 2V @ 35µA | 21nC @ 5V | 2670pF @ 15V | 48W | Surface Mount | 8-PowerTDFN | PG-TDSON-8 (5.15x6.15) |
|
|
|
TPC8018-H(TE12LQM) |
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 18A SOP8 2-6J1B |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 18A (Ta) | 4.6 mOhm @ 9A, 10V | 2.3V @ 1mA | 38nC @ 10V | 2265pF @ 10V | - | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) |
|
|
|
STD7NM64N |
STMicroelectronics |
MOSFET N-CH 640V 5A DPAK |
Tape & Reel (TR) | MDmesh™ II | MOSFET N-Channel, Metal Oxide | Standard | 640V | 5A (Tc) | 1.05 Ohm @ 2.5A, 10V | 4V @ 250µA | 14nC @ 10V | 363pF @ 50V | 60W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK |
|
|
|
BSC059N03S G |
Infineon Technologies |
MOSFET N-CH 30V 73A TDSON-8 |
Digi-Reel® | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 17.5A (Ta), 73A (Tc) | 5.5 mOhm @ 50A, 10V | 2V @ 35µA | 21nC @ 5V | 2670pF @ 15V | 48W | Surface Mount | 8-PowerTDFN | PG-TDSON-8 (5.15x6.15) |
|
|
|
STD7NM64N |
STMicroelectronics |
MOSFET N-CH 640V 5A DPAK |
Cut Tape (CT) | MDmesh™ II | MOSFET N-Channel, Metal Oxide | Standard | 640V | 5A (Tc) | 1.05 Ohm @ 2.5A, 10V | 4V @ 250µA | 14nC @ 10V | 363pF @ 50V | 60W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK |
|
|
|
TPC8021-H(TE12LQ,M |
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 11A SOP8 2-6J1B |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 11A (Ta) | 17 mOhm @ 5.5A, 10V | 2.3V @ 1mA | 11nC @ 10V | 640pF @ 10V | - | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) |
|
|
|
BSC119N03S G |
Infineon Technologies |
MOSFET N-CH 30V 30A TDSON-8 |
Tape & Reel (TR) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 11.9A (Ta), 30A (Tc) | 11.9 mOhm @ 30A, 10V | 2V @ 20µA | 11nC @ 5V | 1370pF @ 15V | 43W | Surface Mount | 8-PowerTDFN | PG-TDSON-8 (5.15x6.15) |
|
|
|
TPC8022-H(TE12LQ,M |
Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 7.5A SOP8 2-6J1B |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 40V | 7.5A (Ta) | 27 mOhm @ 3.8A, 10V | 2.3V @ 1mA | 11nC @ 10V | 650pF @ 10V | - | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) |
|
|
|
BSC119N03S G |
Infineon Technologies |
MOSFET N-CH 30V 30A TDSON-8 |
Cut Tape (CT) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 11.9A (Ta), 30A (Tc) | 11.9 mOhm @ 30A, 10V | 2V @ 20µA | 11nC @ 5V | 1370pF @ 15V | 43W | Surface Mount | 8-PowerTDFN | PG-TDSON-8 (5.15x6.15) |
|
|
|
STD7NM64N |
STMicroelectronics |
MOSFET N-CH 640V 5A DPAK |
Digi-Reel® | MDmesh™ II | MOSFET N-Channel, Metal Oxide | Standard | 640V | 5A (Tc) | 1.05 Ohm @ 2.5A, 10V | 4V @ 250µA | 14nC @ 10V | 363pF @ 50V | 60W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK |
|
|
|
BSC119N03S G |
Infineon Technologies |
MOSFET N-CH 30V 30A TDSON-8 |
Digi-Reel® | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 11.9A (Ta), 30A (Tc) | 11.9 mOhm @ 30A, 10V | 2V @ 20µA | 11nC @ 5V | 1370pF @ 15V | 43W | Surface Mount | 8-PowerTDFN | PG-TDSON-8 (5.15x6.15) |
|
|
|
TPC8031-H(TE12LQM) |
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 11A SOP8 2-6J1B |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 11A (Ta) | 13.3 mOhm @ 5.5A, 10V | 2.5V @ 1mA | 21nC @ 10V | 2150pF @ 10V | - | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) |
|
|
|
BUK7Y08-40B/C,115 |
NXP Semiconductors |
MOSFET N-CH 40V 75A LFPAK |
Tape & Reel (TR) | TrenchMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 40V | 75A (Ta) | 8 mOhm @ 25A, 10V | 4V @ 1mA | 36.3nC @ 10V | 2040pF @ 25V | 105W | Surface Mount | SC-100, SOT-669, 4-LFPAK | LFPAK56, Power-SO8 |
|
|
|
BSL211SP L6327 |
Infineon Technologies |
MOSFET P-CH 20V 4.7A TSOP-6 |
Tape & Reel (TR) | OptiMOS™ | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 20V | 4.7A (Ta) | 67 mOhm @ 4.7A, 4.5V | 1.2V @ 25µA | 12.4nC @ 4.5V | 654pF @ 15V | 2W | Surface Mount | SC-74, SOT-457 | PG-TSOP6-6 |
|
|
|
TPC8032-H(TE12LQM) |
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 15A SOP8 2-6J1B |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 15A (Ta) | 6.5 mOhm @ 7.5A, 10V | 2.5V @ 1mA | 33nC @ 10V | 2846pF @ 10V | - | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) |
|
|
|
NP36N055SHE-E1-AY |
Renesas Electronics America |
MOSFET N-CH 55V 36A TO252 |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 55V | 36A (Ta) | 14 mOhm @ 18A, 10V | 4V @ 250µA | 66nC @ 10V | 3500pF @ 25V | 1.2W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (MP-3ZK) |
|
|
|
BSL211SP L6327 |
Infineon Technologies |
MOSFET P-CH 20V 4.7A TSOP-6 |
Cut Tape (CT) | OptiMOS™ | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 20V | 4.7A (Ta) | 67 mOhm @ 4.7A, 4.5V | 1.2V @ 25µA | 12.4nC @ 4.5V | 654pF @ 15V | 2W | Surface Mount | SC-74, SOT-457 | PG-TSOP6-6 |
|
|
|
TPC8033-H(TE12LQM) |
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 17A SOP8 2-6J1B |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Standard | 30V | 17A (Ta) | 5.3 mOhm @ 8.5A, 10V | 2.5V @ 1mA | 42nC @ 10V | 3713pF @ 10V | - | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) |
|
|
|
SI4124DY-T1-E3 |
Vishay Siliconix |
MOSFET N-CH D-S 40V 8-SOIC |
Tape & Reel (TR) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Standard | 40V | 13.6A (Ta), 20.5A (Tc) | 7.5 mOhm @ 14A, 10V | 3V @ 250µA | 77nC @ 10V | 3540pF @ 20V | 5.7W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC N |
|
|
|
BSL211SP L6327 |
Infineon Technologies |
MOSFET P-CH 20V 4.7A TSOP-6 |
Digi-Reel® | OptiMOS™ | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 20V | 4.7A (Ta) | 67 mOhm @ 4.7A, 4.5V | 1.2V @ 25µA | 12.4nC @ 4.5V | 654pF @ 15V | 2W | Surface Mount | SC-74, SOT-457 | PG-TSOP6-6 |
|
|
|
TPC8110(TE12L,Q,M) |
Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 8A SOP8 2-6J1B |
Tape & Reel (TR) | - | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 40V | 8A (Ta) | 25 mOhm @ 4A, 10V | 2V @ 1mA | 48nC @ 10V | 2180pF @ 10V | - | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) |
|
|
|
SI4455DY-T1-E3 |
Vishay Siliconix |
MOSFET P-CH D-S 150V 8-SOIC |
Tape & Reel (TR) | TrenchFET® | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 150V | 2A (Ta), 2.8A (Tc) | 295 mOhm @ 4A, 10V | 4V @ 250µA | 42nC @ 10V | 1190pF @ 50V | 5.9W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC N |