SIR814DP-T1-GE3
- Description：
- MOSFET N-CH 40V 40.6A 8SO
- Manufacturer：
- Vishay Siliconix
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Product Information
- Category
- FETs - Single
- Packaging
- Tape & Reel (TR)
- Series
- TrenchFET®
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 40V
- Current - Continuous Drain (Id) @ 25°C
- 40.6A (Ta)
- Rds On (Max) @ Id, Vgs
- 2.1 mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id
- 2.3V @ 250µA
- Gate Charge (Qg) @ Vgs
- 86nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 3800pF @ 20V
- Power - Max
- 6.25W
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Supplier Device Package
- PowerPAK; SO-8
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