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TPC8018-H(TE12LQM)

Description:
MOSFET N-CH 30V 18A SOP8 2-6J1B
Manufacturer:
Toshiba Semiconductor and Storage
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TPC8018-H(TE12LQM)

Product Information

Category
FETs - Single
Packaging
Tape & Reel (TR)
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
18A (Ta)
Rds On (Max) @ Id, Vgs
4.6 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
2.3V @ 1mA
Gate Charge (Qg) @ Vgs
38nC @ 10V
Input Capacitance (Ciss) @ Vds
2265pF @ 10V
Power - Max
-
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.173", 4.40mm Width)
Supplier Device Package
8-SOP (5.5x6.0)

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