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SIHB6N65E-GE3

Description:
MOSFET N-CH 650V 7A D2PAK
Manufacturer:
Vishay Siliconix
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SIHB6N65E-GE3

Product Information

Category
FETs - Single
Packaging
Tape & Reel (TR)
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
650V
Current - Continuous Drain (Id) @ 25°C
7A (Tc)
Rds On (Max) @ Id, Vgs
600 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) @ Vgs
48nC @ 10V
Input Capacitance (Ciss) @ Vds
820pF @ 100V
Power - Max
78W
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
D²PAK (TO-263)

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