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Part Number |
Manufacturer |
Description |
Packaging | Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case | Supplier Device Package |
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IRF1405ZSPBF |
International Rectifier |
MOSFET N-CH 55V 75A D2PAK |
Tube | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 55V | 75A (Tc) | 4.9 mOhm @ 75A, 10V | 4V @ 250µA | 180nC @ 10V | 4780pF @ 25V | 230W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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IRLU024N |
International Rectifier |
MOSFET N-CH 55V 17A I-PAK |
Tube | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 55V | 17A (Tc) | 65 mOhm @ 10A, 10V | 2V @ 250µA | 15nC @ 5V | 480pF @ 25V | 45W | Through Hole | TO-251-3 Long Leads, IPak, TO-251AB | I-Pak |
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IRFS11N50ATRLP |
Vishay Siliconix |
MOSFET N-CH 500V 11A D2PAK |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Standard | 500V | 11A (Tc) | 520 mOhm @ 6.6A, 10V | 4V @ 250µA | 52nC @ 10V | 1423pF @ 25V | 170W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB |
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IPB50CN10N G |
Infineon Technologies |
MOSFET N-CH 100V 20A TO263-3 |
Tape & Reel (TR) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 100V | 20A (Tc) | 50 mOhm @ 20A, 10V | 4V @ 20µA | 16nC @ 10V | 1090pF @ 50V | 44W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 |
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IRLU2703 |
International Rectifier |
MOSFET N-CH 30V 23A I-PAK |
Tube | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 23A (Tc) | 45 mOhm @ 14A, 10V | 1V @ 250µA | 15nC @ 4.5V | 450pF @ 25V | 45W | Through Hole | TO-251-3 Long Leads, IPak, TO-251AB | I-Pak |
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IRFS11N50ATRRP |
Vishay Siliconix |
MOSFET N-CH 500V 11A D2PAK |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Standard | 500V | 11A (Tc) | 520 mOhm @ 6.6A, 10V | 4V @ 250µA | 52nC @ 10V | 1423pF @ 25V | 170W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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IPB79CN10N G |
Infineon Technologies |
MOSFET N-CH 100V 13A TO263-3 |
Tape & Reel (TR) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 100V | 13A (Tc) | 79 mOhm @ 13A, 10V | 4V @ 12µA | 11nC @ 10V | 716pF @ 50V | 31W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 |
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BUK7C1R2-40EJ |
NXP Semiconductors |
MOSFET N-CH 40V 200A D2PAK-7 |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Standard | 40V | - | - | - | - | - | - | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | D2PAK (7-Lead) |
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IRLU3303 |
International Rectifier |
MOSFET N-CH 30V 35A I-PAK |
Tube | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 35A (Tc) | 31 mOhm @ 21A, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | 68W | Through Hole | TO-251-3 Long Leads, IPak, TO-251AB | I-Pak |
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IPB80N06S3-05 |
Infineon Technologies |
MOSFET N-CH 55V 80A TO263-3 |
Tape & Reel (TR) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 55V | 80A (Tc) | 5.1 mOhm @ 63A, 10V | 4V @ 110µA | 240nC @ 10V | 10760pF @ 25V | 165W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 |
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BUK7C1R8-60EJ |
NXP Semiconductors |
MOSFET N-CH 60V 200A D2PAK-7 |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Standard | 60V | - | - | - | - | - | - | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | D2PAK (7-Lead) |
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IRLZ14L |
Vishay Siliconix |
MOSFET N-CH 60V 10A TO-262 |
Tube | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 60V | 10A (Tc) | 200 mOhm @ 6A, 5V | 2V @ 250µA | 8.4nC @ 5V | 400pF @ 25V | 3.7W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 |
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IPD088N04L G |
Infineon Technologies |
MOSFET N-CH 40V 50A TO252-3 |
Tape & Reel (TR) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 40V | 50A (Tc) | 8.8 mOhm @ 50A, 10V | 2V @ 16µA | 28nC @ 10V | 2100pF @ 20V | 47W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 |
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BUK7C3R1-80EJ |
NXP Semiconductors |
MOSFET N-CH 80V 200A D2PAK-7 |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Standard | 80V | - | - | - | - | - | - | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | D2PAK (7-Lead) |
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IRLZ14S |
Vishay Siliconix |
MOSFET N-CH 60V 10A D2PAK |
Tube | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 60V | 10A (Tc) | 200 mOhm @ 6A, 5V | 2V @ 250µA | 8.4nC @ 5V | 400pF @ 25V | 3.7W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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BUK7C4R5-100EJ |
NXP Semiconductors |
MOSFET N-CH 100V 169A D2PAK-7 |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Standard | 100V | - | - | - | - | - | - | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | D2PAK (7-Lead) |
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IPD105N04L G |
Infineon Technologies |
MOSFET N-CH 40V 40A TO252-3 |
Tape & Reel (TR) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 40V | 40A (Tc) | 10.5 mOhm @ 40A, 10V | 2V @ 14µA | 23nC @ 10V | 1900pF @ 20V | 42W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 |
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BUK9C2R2-60EJ |
NXP Semiconductors |
MOSFET N-CH 60V D2PAK |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Standard | 60V | - | - | - | - | - | - | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | D2PAK-7 |
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IRLZ24NS |
International Rectifier |
MOSFET N-CH 55V 18A D2PAK |
Tube | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 55V | 18A (Tc) | 60 mOhm @ 11A, 10V | 2V @ 250µA | 15nC @ 5V | 480pF @ 25V | 3.8W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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IPD12CNE8N G |
Infineon Technologies |
MOSFET N-CH 85V 67A TO252-3 |
Tape & Reel (TR) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 85V | 67A (Tc) | 12.4 mOhm @ 67A, 10V | 4V @ 83µA | 64nC @ 10V | 4340pF @ 40V | 125W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 |
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BUK9C3R8-80EJ |
NXP Semiconductors |
MOSFET N-CH 80V D2PAK |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Standard | 80V | - | - | - | - | - | - | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | D2PAK-7 |
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IRLZ34NS |
International Rectifier |
MOSFET N-CH 55V 30A D2PAK |
Tube | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 55V | 30A (Tc) | 35 mOhm @ 16A, 10V | 2V @ 250µA | 25nC @ 5V | 880pF @ 25V | 3.8W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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IPD15N06S2L-64 |
Infineon Technologies |
MOSFET N-CH 55V 19A TO252-3 |
Tape & Reel (TR) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 55V | 19A (Tc) | 64 mOhm @ 13A, 10V | 2V @ 14µA | 13nC @ 10V | 354pF @ 25V | 47W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 |
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BUK9C5R3-100EJ |
NXP Semiconductors |
MOSFET N-CH 100V D2PAK |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Standard | 100V | - | - | - | - | - | - | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | D2PAK-7 |
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IRLZ44NSTRR |
International Rectifier |
MOSFET N-CH 55V 47A D2PAK |
Tape & Reel (TR) | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 55V | 47A (Tc) | 22 mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | 1700pF @ 25V | 3.8W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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IPD160N04L G |
Infineon Technologies |
MOSFET N-CH 40V 30A TO252-3 |
Tape & Reel (TR) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 40V | 30A (Tc) | 16 mOhm @ 30A, 10V | 2V @ 10µA | 15nC @ 10V | 1200pF @ 20V | 31W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 |
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BUK9C1R3-40EJ |
NXP Semiconductors |
MOSFET N-CH 40V D2PAK |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 40V | 190A (Tmb) | 1.3 mOhm @ 90A, 5V | - | - | - | 349W | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | D2PAK |
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IRLZ44S |
Vishay Siliconix |
MOSFET N-CH 60V 50A D2PAK |
Tube | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 60V | 50A (Tc) | 28 mOhm @ 31A, 5V | 2V @ 250µA | 66nC @ 5V | 3300pF @ 25V | 3.7W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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IRFB7434GPBF |
International Rectifier |
MOSFET N CH 40V 195A TO220AB |
Tube | HEXFET®, StrongIRFET™ | MOSFET N-Channel, Metal Oxide | Standard | 40V | 195A (Tc) | 1.6 mOhm @ 100A, 10V | 3.9V @ 250µA | 324nC @ 10V | 10820pF @ 25V | 294W | Through Hole | TO-220-3 | TO-220-3 |
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IRLZ44STRR |
Vishay Siliconix |
MOSFET N-CH 60V 50A D2PAK |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 60V | 50A (Tc) | 28 mOhm @ 31A, 5V | 2V @ 250µA | 66nC @ 5V | 3300pF @ 25V | 3.7W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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IPD16CN10N G |
Infineon Technologies |
MOSFET N-CH 100V 53A TO252-3 |
Tape & Reel (TR) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 100V | 53A (Tc) | 16 mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | 3220pF @ 50V | 100W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 |
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IRL640STRRPBF |
Vishay Siliconix |
MOSFET N-CH 200V 17A D2PAK |
Tape & Reel (TR) | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 200V | 17A (Tc) | 180 mOhm @ 10A, 5V | 2V @ 250µA | 66nC @ 5V | 1800pF @ 25V | 3.1W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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IPD16CNE8N G |
Infineon Technologies |
MOSFET N-CH 85V 53A TO252-3 |
Tape & Reel (TR) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 85V | 53A (Tc) | 16 mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | 3230pF @ 40V | 100W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 |
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SI3443DVTR |
International Rectifier |
MOSFET P-CH 20V 4.4A 6-TSOP |
Cut Tape (CT) | HEXFET® | MOSFET P-Channel, Metal Oxide | Logic Level Gate, 2.5V Drive | 20V | 4.4A (Ta) | 65 mOhm @ 4.4A, 4.5V | 1.5V @ 250µA | 15nC @ 4.5V | 1079pF @ 10V | 2W | Surface Mount | 6-LSOP (0.063", 1.60mm Width) | Micro6™(TSOP-6) |
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IRF840LCSTRRPBF |
Vishay Siliconix |
MOSFET N-CH 500V 8A D2PAK |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 500V | 8A (Tc) | 850 mOhm @ 4.8A, 10V | 4V @ 250µA | 39nC @ 10V | 1100pF @ 25V | 125W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB |
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IPD170N04N G |
Infineon Technologies |
MOSFET N-CH 40V 30A TO252-3 |
Tape & Reel (TR) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 40V | 30A (Tc) | 17 mOhm @ 30A, 10V | 4V @ 10µA | 11nC @ 10V | 880pF @ 20V | 31W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 |
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SI3443DVTR |
International Rectifier |
MOSFET P-CH 20V 4.4A 6-TSOP |
Digi-Reel® | HEXFET® | MOSFET P-Channel, Metal Oxide | Logic Level Gate, 2.5V Drive | 20V | 4.4A (Ta) | 65 mOhm @ 4.4A, 4.5V | 1.5V @ 250µA | 15nC @ 4.5V | 1079pF @ 10V | 2W | Surface Mount | 6-LSOP (0.063", 1.60mm Width) | Micro6™(TSOP-6) |
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IPD25CNE8N G |
Infineon Technologies |
MOSFET N-CH 85V 35A TO252-3 |
Tape & Reel (TR) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 85V | 35A (Tc) | 25 mOhm @ 35A, 10V | 4V @ 39µA | 31nC @ 10V | 2070pF @ 40V | 71W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 |
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IRF7738L2TRPBF |
International Rectifier |
MOSFET N CH 40V 315A DIRECTFET |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Standard | 40V | 35A (Ta), 184A (Tc) | 1.6 mOhm @ 109A, 10V | 4V @ 250µA | 194nC @ 10V | 7471pF @ 25V | 3.3W | Surface Mount | DirectFET™ Isometric L6 | DIRECTFET L6 |
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SI4410DY |
International Rectifier |
MOSFET N-CH 30V 10A 8-SOIC |
Tube | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 10A (Ta) | 13.5 mOhm @ 10A, 10V | 1V @ 250µA | 45nC @ 10V | 1585pF @ 15V | 2.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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IRFS4610PBF |
International Rectifier |
MOSFET N-CH 100V 73A D2PAK |
Tube | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 100V | 73A (Tc) | 14 mOhm @ 44A, 10V | 4V @ 100µA | 140nC @ 10V | 3550pF @ 50V | 190W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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IPD49CN10N G |
Infineon Technologies |
MOSFET N-CH 100V 20A TO252-3 |
Tape & Reel (TR) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 100V | 20A (Tc) | 49 mOhm @ 20A, 10V | 4V @ 20µA | 16nC @ 10V | 1090pF @ 50V | 44W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 |
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SI4435DYTR |
International Rectifier |
MOSFET P-CH 30V 8A 8-SOIC |
Tape & Reel (TR) | HEXFET® | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 30V | 8A (Tc) | 20 mOhm @ 8A, 10V | 1V @ 250µA | 60nC @ 10V | 2320pF @ 15V | 2.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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2SK3943-ZP-E1-AY |
Renesas Electronics America |
MOSFET N-CH 40V MP-25ZP/TO-263 |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 40V | 82A (Tc) | 3.5 mOhm @ 41A, 10V | - | 93nC @ 10V | 5800pF @ 10V | 1.5W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 |
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IPD50R399CP |
Infineon Technologies |
MOSFET N-CH 550V 9A TO-252 |
Tape & Reel (TR) | CoolMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 550V | 9A (Tc) | 399 mOhm @ 4.9A, 10V | 3.5V @ 330µA | 23nC @ 10V | 890pF @ 100V | 83W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 |
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SI4435DY |
International Rectifier |
MOSFET P-CH 30V 8A 8-SOIC |
Tube | HEXFET® | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 30V | 8A (Tc) | 20 mOhm @ 8A, 10V | 1V @ 250µA | 60nC @ 10V | 2320pF @ 15V | 2.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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2SK3943-ZP-E1-AY |
Renesas Electronics America |
MOSFET N-CH 40V MP-25ZP/TO-263 |
Cut Tape (CT) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 40V | 82A (Tc) | 3.5 mOhm @ 41A, 10V | - | 93nC @ 10V | 5800pF @ 10V | 1.5W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 |
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IPD50R520CP |
Infineon Technologies |
MOSFET N-CH 550V 7.1A TO-252 |
Tape & Reel (TR) | CoolMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 550V | 7.1A (Tc) | 520 mOhm @ 3.8A, 10V | 3.5V @ 250µA | 17nC @ 10V | 680pF @ 100V | 66W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 |
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IRL510S |
Vishay Siliconix |
MOSFET N-CH 100V 5.6A D2PAK |
Tube | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 100V | 5.6A (Tc) | 540 mOhm @ 3.4A, 5V | 2V @ 250µA | 6.1nC @ 5V | 250pF @ 25V | 3.7W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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2SK3943-ZP-E1-AY |
Renesas Electronics America |
MOSFET N-CH 40V MP-25ZP/TO-263 |
Digi-Reel® | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 40V | 82A (Tc) | 3.5 mOhm @ 41A, 10V | - | 93nC @ 10V | 5800pF @ 10V | 1.5W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 |
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IPD64CN10N G |
Infineon Technologies |
MOSFET N-CH 100V 17A TO252-3 |
Tape & Reel (TR) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 100V | 17A (Tc) | 64 mOhm @ 17A, 10V | 4V @ 20µA | 9nC @ 10V | 569pF @ 50V | 44W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 |
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IRFL4105 |
International Rectifier |
MOSFET N-CH 55V 3.7A SOT223 |
Tube | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 55V | 3.7A (Ta) | 45 mOhm @ 3.7A, 10V | 4V @ 250µA | 35nC @ 10V | 660pF @ 25V | 1W | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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SI4406DY-T1-E3 |
Vishay Siliconix |
MOSFET N-CH D-S 30V 8-SOIC |
Tape & Reel (TR) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 13A (Ta) | 4.5 mOhm @ 20A, 10V | 3V @ 250µA | 50nC @ 4.5V | - | 1.6W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC N |
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IRLL3303 |
International Rectifier |
MOSFET N-CH 30V 4.6A SOT223 |
Tube | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 4.6A (Ta) | 31 mOhm @ 4.6A, 10V | 1V @ 250µA | 50nC @ 10V | 840pF @ 25V | 1W | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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IPD80N06S3-09 |
Infineon Technologies |
MOSFET N-CH 55V 80A TO252-3 |
Tape & Reel (TR) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 55V | 80A (Tc) | 8.4 mOhm @ 40A, 10V | 4V @ 55µA | 88nC @ 10V | 6100pF @ 25V | 107W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 |
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SI4406DY-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH D-S 30V 8-SOIC |
Tape & Reel (TR) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 13A (Ta) | 4.5 mOhm @ 20A, 10V | 3V @ 250µA | 50nC @ 4.5V | - | 1.6W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC N |
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IPI028N08N3 G |
Infineon Technologies |
MOSFET N-CH 80V 100A TO262-3 |
Tube | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 80V | 100A (Tc) | 2.8 mOhm @ 100A, 10V | 3.5V @ 270µA | 206nC @ 10V | 14200pF @ 40V | 300W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 |
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IRF7204 |
International Rectifier |
MOSFET P-CH 20V 5.3A 8-SOIC |
Tube | HEXFET® | MOSFET P-Channel, Metal Oxide | Standard | 20V | 5.3A (Ta) | 60 mOhm @ 5.3A, 10V | 2.5V @ 250µA | 25nC @ 10V | 860pF @ 10V | 2.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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SI4408DY-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 20V 14A 8-SOIC |
Tape & Reel (TR) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 20V | 14A (Ta) | 4.5 mOhm @ 21A, 10V | 1V @ 250µA | 32nC @ 4.5V | - | 1.6W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC N |
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IPI032N06N3 G |
Infineon Technologies |
MOSFET N-CH 60V 120A TO262-3 |
Tube | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 60V | 120A (Tc) | 3.2 mOhm @ 100A, 10V | 4V @ 118µA | 165nC @ 10V | 13000pF @ 30V | 188W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 |
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IRF7524D1TR |
International Rectifier |
MOSFET P-CH 20V 1.7A MICRO8 |
Tape & Reel (TR) | FETKY™ | MOSFET P-Channel, Metal Oxide | Diode (Isolated) | 20V | 1.7A (Ta) | 270 mOhm @ 1.2A, 4.5V | 700mV @ 250µA | 8.2nC @ 4.5V | 240pF @ 15V | 1.25W | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ |
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SI4862DY-T1-E3 |
Vishay Siliconix |
MOSFET N-CH D-S 16V 8-SOIC |
Tape & Reel (TR) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 16V | 17A (Ta) | 3.3 mOhm @ 25A, 4.5V | 600mV @ 250µA | 70nC @ 4.5V | - | 1.6W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC N |
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IPI037N06L3 G |
Infineon Technologies |
MOSFET N-CH 60V 90A TO262-3 |
Tube | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 60V | 90A (Tc) | 3.7 mOhm @ 90A, 10V | 2.2V @ 93µA | 79nC @ 4.5V | 13000pF @ 30V | 167W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 |
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IRF7524D1TR |
International Rectifier |
MOSFET P-CH 20V 1.7A MICRO8 |
Cut Tape (CT) | FETKY™ | MOSFET P-Channel, Metal Oxide | Diode (Isolated) | 20V | 1.7A (Ta) | 270 mOhm @ 1.2A, 4.5V | 700mV @ 250µA | 8.2nC @ 4.5V | 240pF @ 15V | 1.25W | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ |
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SI4862DY-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH D-S 16V 8-SOIC |
Tape & Reel (TR) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 16V | 17A (Ta) | 3.3 mOhm @ 25A, 4.5V | 600mV @ 250µA | 70nC @ 4.5V | - | 1.6W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC N |
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IPI04CN10N G |
Infineon Technologies |
MOSFET N-CH 100V 100A TO262-3 |
Tube | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 100V | 100A (Tc) | 4.2 mOhm @ 100A, 10V | 4V @ 250µA | 210nC @ 10V | 13800pF @ 50V | 300W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 |
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IRF7524D1TR |
International Rectifier |
MOSFET P-CH 20V 1.7A MICRO8 |
Digi-Reel® | FETKY™ | MOSFET P-Channel, Metal Oxide | Diode (Isolated) | 20V | 1.7A (Ta) | 270 mOhm @ 1.2A, 4.5V | 700mV @ 250µA | 8.2nC @ 4.5V | 240pF @ 15V | 1.25W | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ |
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SI7668ADP-T1-E3 |
Vishay Siliconix |
MOSFET N-CH D-S 30V PPAK 8SOIC |
Tape & Reel (TR) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Standard | 30V | 31A (Ta), 40A (Tc) | 3 mOhm @ 25A, 10V | 1.8V @ 250µA | 170nC @ 10V | 8820pF @ 15V | 83W | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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IPI057N08N3 G |
Infineon Technologies |
MOSFET N-CH 80V 80A TO262-3 |
Tube | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 80V | 80A (Tc) | 5.7 mOhm @ 80A, 10V | 3.5V @ 90µA | 69nC @ 10V | 4750pF @ 40V | 150W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 |
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IRF7601TR |
International Rectifier |
MOSFET N-CH 20V 5.7A MICRO8 |
Cut Tape (CT) | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 20V | 5.7A (Ta) | 35 mOhm @ 3.8A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | 650pF @ 15V | 1.8W | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ |
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SI7668ADP-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH D-S 30V PPAK 8SOIC |
Tape & Reel (TR) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Standard | 30V | 31A (Ta), 40A (Tc) | 3 mOhm @ 25A, 10V | 1.8V @ 250µA | 170nC @ 10V | 8820pF @ 15V | 83W | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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IPI05CN10N G |
Infineon Technologies |
MOSFET N-CH 100V 100A TO262-3 |
Tube | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 100V | 100A (Tc) | 5.4 mOhm @ 100A, 10V | 4V @ 250µA | 181nC @ 10V | 12000pF @ 50V | 300W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 |
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AUIRLI2505 |
International Rectifier |
MOSFET N CH 55V 58A TO-220AB |
Tube | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 55V | 58A (Tc) | 8 mOhm @ 31A, 10V | 2V @ 250µA | 130nC @ 5V | 5000pF @ 25V | 63W | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak |
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IRF7601TR |
International Rectifier |
MOSFET N-CH 20V 5.7A MICRO8 |
Digi-Reel® | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 20V | 5.7A (Ta) | 35 mOhm @ 3.8A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | 650pF @ 15V | 1.8W | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ |
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IPI06CN10N G |
Infineon Technologies |
MOSFET N-CH 100V 100A TO262-3 |
Tube | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 100V | 100A (Tc) | 6.5 mOhm @ 100A, 10V | 4V @ 180µA | 139nC @ 10V | 9200pF @ 50V | 214W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 |
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N0412N-S19-AY |
Renesas Electronics America |
MOSFET N-CH 40V 100A TO-220 |
Tube | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 40V | 100A | 3.7 mOhm @ 50A, 10V | - | 100nC @ 10V | 5550pF @ 25V | 1.5W | Through Hole | TO-220-3 | TO-220 |
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IRF7603TR |
International Rectifier |
MOSFET N-CH 30V 5.6A MICRO8 |
Cut Tape (CT) | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 5.6A (Ta) | 35 mOhm @ 3.7A, 10V | 1V @ 250µA | 27nC @ 10V | 520pF @ 25V | 1.8W | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ |
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IPI070N06N G |
Infineon Technologies |
MOSFET N-CH 60V 80A TO220-3 |
Tube | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 60V | 80A (Tc) | 7 mOhm @ 80A, 10V | 4V @ 180µA | 118nC @ 10V | 4100pF @ 30V | 250W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 |
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IRF6611TR1PBF |
International Rectifier |
MOSFET N-CH 30V 32A DIRECTFET |
Tape & Reel (TR) | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 32A (Ta), 150A (Tc) | 2.6 mOhm @ 27A, 10V | 2.25V @ 250µA | 56nC @ 4.5V | 4860pF @ 15V | 3.9W | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX |
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IRF7603TR |
International Rectifier |
MOSFET N-CH 30V 5.6A MICRO8 |
Digi-Reel® | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 5.6A (Ta) | 35 mOhm @ 3.7A, 10V | 1V @ 250µA | 27nC @ 10V | 520pF @ 25V | 1.8W | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ |
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IPI070N08N3 G |
Infineon Technologies |
MOSFET N-CH 80V 80A TO262-3 |
Tube | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 80V | 80A (Tc) | 7 mOhm @ 73A, 10V | 3.5V @ 73µA | 56nC @ 10V | 3840pF @ 40V | 136W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 |
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IRF6611TR1PBF |
International Rectifier |
MOSFET N-CH 30V 32A DIRECTFET |
Cut Tape (CT) | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 32A (Ta), 150A (Tc) | 2.6 mOhm @ 27A, 10V | 2.25V @ 250µA | 56nC @ 4.5V | 4860pF @ 15V | 3.9W | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX |
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IRF7604TR |
International Rectifier |
MOSFET P-CH 20V 3.6A MICRO8 |
Cut Tape (CT) | HEXFET® | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 20V | 3.6A (Ta) | 90 mOhm @ 2.4A, 4.5V | 700mV @ 250µA | 20nC @ 4.5V | 590pF @ 15V | 1.8W | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ |
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IPI08CN10N G |
Infineon Technologies |
MOSFET N-CH 100V 95A TO262-3 |
Tube | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 100V | 95A (Tc) | 8.5 mOhm @ 95A, 10V | 4V @ 130µA | 100nC @ 10V | 6660pF @ 50V | 167W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 |
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IRF6611TR1PBF |
International Rectifier |
MOSFET N-CH 30V 32A DIRECTFET |
Digi-Reel® | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 32A (Ta), 150A (Tc) | 2.6 mOhm @ 27A, 10V | 2.25V @ 250µA | 56nC @ 4.5V | 4860pF @ 15V | 3.9W | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX |
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IRF7604TR |
International Rectifier |
MOSFET P-CH 20V 3.6A MICRO8 |
Digi-Reel® | HEXFET® | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 20V | 3.6A (Ta) | 90 mOhm @ 2.4A, 4.5V | 700mV @ 250µA | 20nC @ 4.5V | 590pF @ 15V | 1.8W | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ |
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SQM85N03-06P-GE3 |
Vishay Siliconix |
MOSFET N-CH D-S 30V TO263 |
Tape & Reel (TR) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 60A (Tc) | 6 mOhm @ 20A, 10V | 2.5V @ 250µA | 70nC @ 10V | 4120pF @ 15V | 100W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) |
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IPI08CNE8N G |
Infineon Technologies |
MOSFET N-CH 85V 95A TO262-3 |
Tube | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 85V | 95A (Tc) | 6.4 mOhm @ 95A, 10V | 4V @ 130µA | 99nC @ 10V | 6690pF @ 40V | 167W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 |
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IRF7663TR |
International Rectifier |
MOSFET P-CH 20V 8.2A MICRO8 |
Cut Tape (CT) | HEXFET® | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 20V | 8.2A (Ta) | 20 mOhm @ 7A, 4.5V | 1.2V @ 250µA | 45nC @ 5V | 2520pF @ 10V | 1.8W | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ |
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IRFS41N15DTRLP |
International Rectifier |
MOSFET N-CH 150V 41A D2PAK |
Tape & Reel (TR) | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 150V | 41A (Tc) | 45 mOhm @ 25A, 10V | 5.5V @ 250µA | 110nC @ 10V | 2520pF @ 25V | 3.1W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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IPI100N08N3 G |
Infineon Technologies |
MOSFET N-CH 80V 70A TO262-3 |
Tube | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 80V | 70A (Tc) | 10 mOhm @ 46A, 10V | 3.5V @ 46µA | 35nC @ 10V | 2410pF @ 40V | 100W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 |
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IRF7663TR |
International Rectifier |
MOSFET P-CH 20V 8.2A MICRO8 |
Digi-Reel® | HEXFET® | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 20V | 8.2A (Ta) | 20 mOhm @ 7A, 4.5V | 1.2V @ 250µA | 45nC @ 5V | 2520pF @ 10V | 1.8W | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ |
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SI4858DY-T1-E3 |
Vishay Siliconix |
MOSFET N-CH D-S 30V 8-SOIC |
Tape & Reel (TR) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 13A (Ta) | 5.25 mOhm @ 20A, 10V | 1V @ 250µA | 40nC @ 4.5V | - | 1.6W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC N |
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IPI100P03P3L-04 |
Infineon Technologies |
MOSFET P-CH 30V 100A TO262-3 |
Tube | OptiMOS™ | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 30V | 100A (Tc) | 4.3 mOhm @ 80A, 10V | 2.1V @ 475µA | 200nC @ 10V | 9300pF @ 25V | 200W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 |
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IRLML2502TR |
International Rectifier |
MOSFET N-CH 20V 4.2A SOT-23 |
Cut Tape (CT) | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 20V | 4.2A (Ta) | 45 mOhm @ 4.2A, 4.5V | 1.2V @ 250µA | 12nC @ 5V | 740pF @ 15V | 1.25W | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 |
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SI4858DY-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH D-S 30V 8-SOIC |
Tape & Reel (TR) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 13A (Ta) | 5.25 mOhm @ 20A, 10V | 1V @ 250µA | 40nC @ 4.5V | - | 1.6W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC N |
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IPI12CN10N G |
Infineon Technologies |
MOSFET N-CH 100V 67A TO262-3 |
Tube | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 100V | 67A (Tc) | 12.9 mOhm @ 67A, 10V | 4V @ 83µA | 65nC @ 10V | 4320pF @ 50V | 125W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 |
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IRLML2803TR |
International Rectifier |
MOSFET N-CH 30V 1.2A SOT-23 |
Cut Tape (CT) | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 1.2A (Ta) | 250 mOhm @ 910mA, 10V | 1V @ 250µA | 5nC @ 10V | 85pF @ 25V | 540mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 |
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IPI12CNE8N G |
Infineon Technologies |
MOSFET N-CH 85V 67A TO262-3 |
Tube | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 85V | 67A (Tc) | 12.6 mOhm @ 67A, 10V | 4V @ 83µA | 64nC @ 10V | 4340pF @ 40V | 125W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 |
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IPA50R800CE |
Infineon Technologies |
MOSF N CH 500V 5A PG-TO220 FPK |
Tube | CoolMOS™ | MOSFET N-Channel, Metal Oxide | Super Junction | 500V | 5A (Tc) | 800 mOhm @ 1.5A, 13V | 3.5V @ 130µA | 12.4nC @ 10V | 280pF @ 100V | 26W | Through Hole | TO-220-3 Full Pack | PG-TO-220-FP |
