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SI4435DY

Description:
MOSFET P-CH 30V 8A 8-SOIC
Manufacturer:
International Rectifier
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SI4435DY

Product Information

Category
FETs - Single
Packaging
Tube
Series
HEXFET®
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Rds On (Max) @ Id, Vgs
20 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) @ Vgs
60nC @ 10V
Input Capacitance (Ciss) @ Vds
2320pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO

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