| Buy |
PDF |
Photo |
Part Number |
Manufacturer |
Description |
Packaging | Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Thermal Resistance | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|
 |
 |
GKN71/14 |
GeneSiC Semiconductor |
DIODE GEN PURPOSE 1.4KV 95A DO5 |
Bulk | - | Standard | 1400V (1.4kV) | 95A | 1.5V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 1400V | - | 0.55°C/W Jc | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 180°C |
|
- |
|
SIDC09D60E6 UNSAWN |
Infineon Technologies |
DIODE SWITCHING 600V 20A WAFER |
Bulk | - | Standard | 600V | 20A (DC) | 1.7V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 27µA @ 600V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
GKN71/16 |
GeneSiC Semiconductor |
DIODE GEN PURPOSE 1.6KV 95A DO5 |
Bulk | - | Standard | 1600V (1.6kV) | 95A | 1.5V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 1600V | - | 0.55°C/W Jc | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 180°C |
|
|
|
SIDC09D60E6Y |
Infineon Technologies |
DIODE SWITCHING 600V 20A WAFER |
Bulk | - | Standard | 600V | 20A (DC) | 1.7V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 27µA @ 600V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
GKR26/12 |
GeneSiC Semiconductor |
DIODE GEN PURPOSE 1.2KV 25A DO4 |
Bulk | - | Standard | 1200V (1.2kV) | 25A | 1.55V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 4mA @ 1200V | - | 2°C/W Jc | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -40°C ~ 180°C |
|
|
|
SIDC09D60F6 |
Infineon Technologies |
DIODE SWITCHING 600V 30A WAFER |
Bulk | - | Standard | 600V | 30A (DC) | 1.6V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27µA @ 600V | - | - | Surface Mount | Wafer | Sawn on foil | -40°C ~ 175°C |
|
|
|
GKR26/16 |
GeneSiC Semiconductor |
DIODE GEN PURPOSE 1.6KV 25A DO4 |
Bulk | - | Standard | 1600V (1.6kV) | 25A | 1.55V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 4mA @ 1600V | - | 2°C/W Jc | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -40°C ~ 180°C |
|
|
|
SIDC10D120H6 |
Infineon Technologies |
DIODE SWITCHING 1200V 15A WAFER |
Bulk | - | Standard | 1200V (1.2kV) | 15A (DC) | 1.6V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
S12QR |
GeneSiC Semiconductor |
DIODE GEN PURP 1200V 12A DO4 |
Bulk | - | Standard, Reverse Polarity | 1200V (1.2kV) | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | 2.5°C/W Jc | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
|
|
|
S16JR |
GeneSiC Semiconductor |
DIODE GEN PURP 600V 16A DO4 |
Bulk | - | Standard, Reverse Polarity | 600V | 16A | 1.1V @ 16A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | 2.5°C/W Jc | Chassis, Stud Mount | DO-203AA, DO-4, Stud | - | -65°C ~ 175°C |
|
|
|
SIDC110D170H |
Infineon Technologies |
DIODE SWITCHING 1700V 200A WAFER |
Bulk | - | Standard | 1700V (1.7kV) | 200A (DC) | 1.8V @ 200A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
SIDC11D60SIC3 |
Infineon Technologies |
DIODE SCHOTTKY 600V 4A WAFER |
Bulk | - | Silicon Carbide Schottky | 600V | 4A (DC) | 1.9V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 150pF @ 1V, 1MHz | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 175°C |
|
|
|
S16MR |
GeneSiC Semiconductor |
DIODE GEN PURP 1000V 16A DO4 |
Bulk | - | Standard, Reverse Polarity | 1000V (1kV) | 16A | 1.1V @ 16A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | 2.5°C/W Jc | Chassis, Stud Mount | DO-203AA, DO-4, Stud | - | -65°C ~ 175°C |
|
|
|
SIDC14D120E6 |
Infineon Technologies |
DIODE SWITCHING 1200V 15A WAFER |
Bulk | - | Standard | 1200V (1.2kV) | 15A (DC) | 1.9V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
S25D |
GeneSiC Semiconductor |
DIODE GEN PURPOSE 200V 25A DO4 |
Bulk | - | Standard | 200V | 25A | 1.1V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | 2.5°C/W Jc | Chassis, Stud Mount | DO-203AA, DO-4, Stud | - | -65°C ~ 175°C |
|
|
|
SIDC14D120F6 |
Infineon Technologies |
DIODE SWITCHING 1200V 15A WAFER |
Bulk | - | Standard | 1200V (1.2kV) | 15A (DC) | 2.1V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
S25J |
GeneSiC Semiconductor |
DIODE GEN PURPOSE 600V 25A DO4 |
Bulk | - | Standard | 600V | 25A | 1.1V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | 2.5°C/W Jc | Chassis, Stud Mount | DO-203AA, DO-4, Stud | - | -65°C ~ 175°C |
|
|
|
S25JR |
GeneSiC Semiconductor |
DIODE GEN PURPOSE 600V 25A DO4 |
Bulk | - | Standard, Reverse Polarity | 600V | 25A | 1.1V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | 2.5°C/W Jc | Chassis, Stud Mount | DO-203AA, DO-4, Stud | - | -65°C ~ 175°C |
|
|
|
SIDC14D120H6 |
Infineon Technologies |
DIODE SWITCHING 1200V 25A WAFER |
Bulk | - | Standard | 1200V (1.2kV) | 25A (DC) | 1.6V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
S25M |
GeneSiC Semiconductor |
DIODE GEN PURPOSE 1KV 25A DO4 |
Bulk | - | Standard | 1000V (1kV) | 25A | 1.1V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | 2.5°C/W Jc | Chassis, Stud Mount | DO-203AA, DO-4, Stud | - | -65°C ~ 175°C |
|
|
|
SIDC14D60C6 |
Infineon Technologies |
DIODE SWITCHING 600V 50A WAFER |
Bulk | - | Standard | 600V | 50A (DC) | 1.9V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | - | Surface Mount | Wafer | Sawn on foil | -40°C ~ 175°C |
|
|
|
SIDC14D60C6Y |
Infineon Technologies |
DIODE SWITCHING 600V 50A WAFER |
Bulk | - | Standard | 600V | 50A (DC) | 1.9V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | - | Surface Mount | Wafer | Sawn on foil | -40°C ~ 175°C |
|
|
|
S25Q |
GeneSiC Semiconductor |
DIODE GEN PURPOSE 1.2KV 25A DO4 |
Bulk | - | Standard | 1200V (1.2kV) | 25A | 1.1V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | 2.5°C/W Jc | Chassis, Stud Mount | DO-203AA, DO-4, Stud | - | -65°C ~ 175°C |
|
|
|
SIDC14D60E6 |
Infineon Technologies |
DIODE SWITCHING 600V 30A WAFER |
Bulk | - | Standard | 600V | 30A (DC) | 1.25V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
S25QR |
GeneSiC Semiconductor |
DIODE GEN PURPOSE 1.2KV 25A DO4 |
Bulk | - | Standard, Reverse Polarity | 1200V (1.2kV) | 25A | 1.1V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | 2.5°C/W Jc | Chassis, Stud Mount | DO-203AA, DO-4, Stud | - | -65°C ~ 175°C |
|
|
|
SIDC14D60E6Y |
Infineon Technologies |
DIODE SWITCHING 600V 30A WAFER |
Bulk | - | Standard | 600V | 30A (DC) | 1.25V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
S6Q |
GeneSiC Semiconductor |
DIODE GEN PURPOSE 1.2KV 6A DO4 |
Bulk | - | Standard | 1200V (1.2kV) | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | 2.5°C/W Jc | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
|
|
|
SIDC14D60F6 |
Infineon Technologies |
DIODE SWITCHING 600V 45A WAFER |
Bulk | - | Standard | 600V | 45A (DC) | 1.6V @ 45A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27µA @ 600V | - | - | Surface Mount | Wafer | Sawn on foil | -40°C ~ 150°C |
|
|
|
1N5190 |
Microsemi Commercial Components Group |
DIODE RECT FAST RECOVERY |
* | - | Standard | 600V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 2µA @ 600V | - | 20°C/W Jl | * | * | * | -65°C ~ 175°C |
|
|
|
SIDC161D170H |
Infineon Technologies |
DIODE SWITCHING 1700V 300A WAFER |
Bulk | - | Standard | 1700V (1.7kV) | 300A (DC) | 1.8V @ 300A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
1N5803 |
Microsemi Commercial Components Group |
DIODE RECT ULT FAST REC A-PKG |
Bulk | - | Standard | 75V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 75V | 25pF @ 10V, 1MHz | 36°C/W Jl | Through Hole | A, Axial | * | -65°C ~ 175°C |
|
|
|
1N5623 |
Microsemi Commercial Components Group |
DIODE RECT STD REC A-PKG |
Bulk | - | Standard | 1000V (1kV) | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 500nA @ 1000V | 15pF @ 12V, 1MHz | 38°C/W Jl | Through Hole | A, Axial | * | -65°C ~ 175°C |
|
|
|
SIDC16D60SIC3 |
Infineon Technologies |
DIODE SCHOTTKY 600V 5A WAFER |
Bulk | - | Silicon Carbide Schottky | 600V | 5A (DC) | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 170pF @ 1V, 1MHz | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 175°C |
|
|
|
SIDC19D60SIC3 |
Infineon Technologies |
DIODE SCHOTTKY 600V 6A WAFER |
Bulk | - | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 300pF @ 1V, 1MHz | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 175°C |
|
|
|
S40J |
GeneSiC Semiconductor |
DIODE GEN PURPOSE 600V 40A DO5 |
Bulk | - | Standard | 600V | 40A | 1.1V @ 40A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | 1.25°C/W Jc | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 190°C |
|
|
|
SIDC20D60C6 |
Infineon Technologies |
DIODE SWITCHING 600V 75A WAFER |
Bulk | - | Standard | 600V | 75A (DC) | 1.9V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | - | Surface Mount | Wafer | Sawn on foil | -40°C ~ 175°C |
|
|
|
JAN1N3957 |
Microsemi HI-REL [MIL] |
DIODE STD REC 1400K 250MA |
Bulk | Military, MIL-PRF-19500/228 | Standard | 1000V (1kV) | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 300V | - | 38°C/W Jl | Through Hole | A, Axial | * | -65°C ~ 175°C |
|
|
|
1N5804 |
Microsemi Commercial Components Group |
DIODE RECT ULT FAST REC A-PKG |
Bulk | - | Standard | 100V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | 25pF @ 10V, 1MHz | 36°C/W Jl | Through Hole | A, Axial | * | -65°C ~ 175°C |
|
|
|
SIDC23D120E6 |
Infineon Technologies |
DIODE SWITCHING 1200V 25A WAFER |
Bulk | - | Standard | 1200V (1.2kV) | 25A (DC) | 1.9V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
SIDC23D120F6 |
Infineon Technologies |
DIODE SWITCHING 1200V 25A WAFER |
Bulk | - | Standard | 1200V (1.2kV) | 25A (DC) | 2.1V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
UPR60/TR7 |
Microsemi Commercial Components Group |
DIODE ULT FAST 2A 600V POWERMITE |
Tape & Reel (TR) | - | Standard | 600V | 2A | 1.6V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 600V | - | 10°C/W Jc | Surface Mount | DO-216AA | Powermite | -55°C ~ 150°C |
|
|
|
SIDC23D120H6 |
Infineon Technologies |
DIODE SWITCHING 1200V 35A WAFER |
Bulk | - | Standard | 1200V (1.2kV) | 35A (DC) | 1.6V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
1N5550 |
Microsemi Commercial Components Group |
DIODE STD REC GLASS B-PKG AXIAL |
* | - | Standard | 200V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 200V | - | 22°C/W Jl | * | * | * | -65°C ~ 175°C |
|
|
|
SIDC23D60E6 |
Infineon Technologies |
DIODE SWITCHING 600V 50A WAFER |
Bulk | - | Standard | 600V | 50A (DC) | 1.25V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
FR40BR02 |
GeneSiC Semiconductor |
DIODE FAST REC 100V 40A DO5 |
Bulk | - | Standard, Reverse Polarity | 100V | 40A | 1.4V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 100V | - | 0.8°C/W Jc | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
|
|
|
SIDC23D60E6Y |
Infineon Technologies |
DIODE SWITCHING 600V 50A WAFER |
Bulk | - | Standard | 600V | 50A (DC) | 1.25V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
FR40BR05 |
GeneSiC Semiconductor |
DIODE FAST REC 100V 40A DO5 |
Bulk | - | Standard, Reverse Polarity | 100V | 40A | 1.4V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 25µA @ 100V | - | 0.8°C/W Jc | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
|
|
|
SIDC24D30SIC3 |
Infineon Technologies |
DIODE SCHOTTKY 300V 10A WAFER |
Bulk | - | Silicon Carbide Schottky | 300V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 300V | 600pF @ 1V, 1MHz | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 175°C |
|
|
|
1N5614US |
Microsemi Commercial Components Group |
DIODE RECT STD REC D-5A |
* | - | Standard | 200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 200V | - | 13°C/W Jl | Surface Mount | * | * | -65°C ~ 200°C |
|
|
|
SIDC26D60C6 |
Infineon Technologies |
DIODE SWITCHING 600V 100A WAFER |
Bulk | - | Standard | 600V | 100A (DC) | 1.9V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | - | Surface Mount | Wafer | Sawn on foil | -40°C ~ 175°C |
|
|
|
1N5186US |
Microsemi Commercial Components Group |
DIODE RECT FAST RECOVERY |
Bulk | - | Standard | 100V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 2µA @ 100V | - | 10°C/W Jl | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
SIDC30D120E6 |
Infineon Technologies |
DIODE SWITCHING 1200V 35A WAFER |
Bulk | - | Standard | 1200V (1.2kV) | 35A (DC) | 1.9V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
CDLL5817 |
Microsemi HI-REL [MIL] |
DIODE SCHOTTKY DO-213AA |
Bulk | - | Schottky | 20V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 20V | - | 40°C/W Jl | Surface Mount | DO-213AB, MELF | DO-213AB | -55°C ~ 125°C |
|
|
|
SIDC30D120F6 |
Infineon Technologies |
DIODE SWITCHING 1200V 35A WAFER |
Bulk | - | Standard | 1200V (1.2kV) | 35A (DC) | 2.1V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
1N5615US |
Microsemi Commercial Components Group |
DIODE RECT STD REC D-5A |
* | - | Standard | 200V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 200V | 45pF @ 12V, 1MHz | 13°C/W Jl | * | * | * | -65°C ~ 175°C |
|
|
|
SIDC30D120H6 |
Infineon Technologies |
DIODE SWITCHING 1200V 50A WAFER |
Bulk | - | Standard | 1200V (1.2kV) | 50A (DC) | 1.6V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
APT60D100SG |
Microsemi Power Products Group |
DIODE ULT FAST 1KV 60A D3PAK |
Tube | - | Standard | 1000V (1kV) | 60A | 2.5V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 280ns | 250µA @ 1000V | - | 0.21°C/W Jc | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3 [S] | -55°C ~ 175°C |
|
|
|
SIDC30D60E6 |
Infineon Technologies |
DIODE SWITCHING 600V 75A WAFER |
Bulk | - | Standard | 600V | 75A (DC) | 1.25V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
SIDC32D170H |
Infineon Technologies |
DIODE SWITCHING 1700V 50A WAFER |
Bulk | - | Standard | 1700V (1.7kV) | 50A (DC) | 1.8V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
SIDC38D60C6 |
Infineon Technologies |
DIODE SWITCHING 600V 150A WAFER |
Bulk | - | Standard | 600V | 150A (DC) | 1.9V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | - | Surface Mount | Wafer | Sawn on foil | -40°C ~ 175°C |
|
|
|
SIDC42D120E6 |
Infineon Technologies |
DIODE SWITCHING 1200V 50A WAFER |
Bulk | - | Standard | 1200V (1.2kV) | 50A (DC) | 1.9V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
SIDC42D120F6 |
Infineon Technologies |
DIODE SWITCHING 1200V 50A WAFER |
Bulk | - | Standard | 1200V (1.2kV) | 50A (DC) | 2.1V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
SIDC42D120H6 |
Infineon Technologies |
DIODE SWITCHING 1200V 75A WAFER |
Bulk | - | Standard | 1200V (1.2kV) | 75A (DC) | 1.6V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
SIDC42D170E6 |
Infineon Technologies |
DIODE SWITCHING 1700V 50A WAFER |
Bulk | - | Standard | 1700V (1.7kV) | 50A (DC) | 2.15V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | - | Surface Mount | Wafer | Sawn on foil | -40°C ~ 150°C |
|
|
|
SIDC42D60E6 |
Infineon Technologies |
DIODE SWITCHING 600V 100A WAFER |
Bulk | - | Standard | 600V | 100A (DC) | 1.25V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
SIDC46D170H |
Infineon Technologies |
DIODE SWITCHING 1700V 75A WAFER |
Bulk | - | Standard | 1700V (1.7kV) | 75A (DC) | 1.8V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
SIDC50D60C6 |
Infineon Technologies |
DIODE SWITCHING 600V 200A WAFER |
Bulk | - | Standard | 600V | 200A (DC) | 1.9V @ 200A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | - | Surface Mount | Wafer | Sawn on foil | -40°C ~ 175°C |
|
|
|
SIDC53D120H6 |
Infineon Technologies |
DIODE SWITCHING 1200V 100A WAFER |
Bulk | - | Standard | 1200V (1.2kV) | 100A (DC) | 1.6V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
SIDC56D120E6 |
Infineon Technologies |
DIODE SWITCHING 1200V 75A WAFER |
Bulk | - | Standard | 1200V (1.2kV) | 75A (DC) | 1.9V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
SIDC56D120F6 |
Infineon Technologies |
DIODE SWITCHING 1200V 75A WAFER |
Bulk | - | Standard | 1200V (1.2kV) | 75A (DC) | 2.1V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
SIDC56D170E6 |
Infineon Technologies |
DIODE SWITCHING 1700V 75A WAFER |
Bulk | - | Standard | 1700V (1.7kV) | 75A (DC) | 2.15V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | - | Surface Mount | Wafer | Sawn on foil | -40°C ~ 150°C |
|
|
|
SIDC56D60E6 |
Infineon Technologies |
DIODE SWITCHING 600V 150A WAFER |
Bulk | - | Standard | 600V | 150A (DC) | 1.25V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
SIDC59D170H |
Infineon Technologies |
DIODE SWITCHING 1700V 100A WAFER |
Bulk | - | Standard | 1700V (1.7kV) | 100A (DC) | 1.8V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
SIDC73D170E6 |
Infineon Technologies |
DIODE SWITCHING 1700V 100A WAFER |
Bulk | - | Standard | 1700V (1.7kV) | 100A (DC) | 2.15V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | - | Surface Mount | Wafer | Sawn on foil | -40°C ~ 175°C |
|
|
|
SIDC78D170H |
Infineon Technologies |
DIODE SWITCHING 1700V 150A WAFER |
Bulk | - | Standard | 1700V (1.7kV) | 150A (DC) | 1.8V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
SIDC81D120E6 |
Infineon Technologies |
DIODE SWITCHING 1200V 100A WAFER |
Bulk | - | Standard | 1200V (1.2kV) | 100A (DC) | 1.9V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
SIDC81D120F6 |
Infineon Technologies |
DIODE SWITCHING 1200V 100A WAFER |
Bulk | - | Standard | 1200V (1.2kV) | 100A (DC) | 2.1V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
SIDC81D120H6 |
Infineon Technologies |
DIODE SWITCHING 1200V 150A WAFER |
Bulk | - | Standard | 1200V (1.2kV) | 150A (DC) | 1.6V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
SIDC81D60E6 |
Infineon Technologies |
DIODE SWITCHING 600V 200A WAFER |
Bulk | - | Standard | 600V | 200A (DC) | 1.25V @ 200A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
|
SIDC85D170H |
Infineon Technologies |
DIODE SWITCHING 1700V 150A WAFER |
Bulk | - | Standard | 1700V (1.7kV) | 150A (DC) | 1.8V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | - | Surface Mount | Wafer | Sawn on foil | -55°C ~ 150°C |
|
|
 |
BAS 16 B5003 |
Infineon Technologies |
DIODE SWITCH 80V 0.25A SOT23-3 |
Tape & Reel (TR) | - | Standard | 80V | 250mA (DC) | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 1µA @ 75V | 2pF @ 0V, 1MHz | 260°C/W Jl | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | 150°C (Max) |
|
|
|
BAS 16 B5003 |
Infineon Technologies |
DIODE SWITCH 80V 0.25A SOT23-3 |
Cut Tape (CT) | - | Standard | 80V | 250mA (DC) | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 1µA @ 75V | 2pF @ 0V, 1MHz | 260°C/W Jl | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | 150°C (Max) |
|
|
|
BAS 16 B5003 |
Infineon Technologies |
DIODE SWITCH 80V 0.25A SOT23-3 |
Digi-Reel® | - | Standard | 80V | 250mA (DC) | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 1µA @ 75V | 2pF @ 0V, 1MHz | 260°C/W Jl | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | 150°C (Max) |
|
|
 |
BAS 3005B-02V E6327 |
Infineon Technologies |
DIODE SCHOTTKY 30V 0.5A SC79-2 |
Tape & Reel (TR) | - | Schottky | 30V | 500mA (DC) | 620mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 25µA @ 30V | 10pF @ 5V, 1MHz | 80°C/W Jl | Surface Mount | SC-79, SOD-523 | PG-SC79-2 | -55°C ~ 125°C |
|
|
|
BAS 3005B-02V E6327 |
Infineon Technologies |
DIODE SCHOTTKY 30V 0.5A SC79-2 |
Cut Tape (CT) | - | Schottky | 30V | 500mA (DC) | 620mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 25µA @ 30V | 10pF @ 5V, 1MHz | 80°C/W Jl | Surface Mount | SC-79, SOD-523 | PG-SC79-2 | -55°C ~ 125°C |
|
|
|
BAS 3005B-02V E6327 |
Infineon Technologies |
DIODE SCHOTTKY 30V 0.5A SC79-2 |
Digi-Reel® | - | Schottky | 30V | 500mA (DC) | 620mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 25µA @ 30V | 10pF @ 5V, 1MHz | 80°C/W Jl | Surface Mount | SC-79, SOD-523 | PG-SC79-2 | -55°C ~ 125°C |
|
|
|
BAS 40 B5003 |
Infineon Technologies |
DIODE SCHOTTKY 40V 0.12A SOT23-3 |
Tape & Reel (TR) | - | Schottky | 40V | 120mA (DC) | 1V @ 40mA | Small Signal =< 200mA (Io), Any Speed | 100ps | 1µA @ 30V | 5pF @ 0V, 1MHz | 275°C/W Jl | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | -55°C ~ 150°C |
|
|
|
BAS 40 B5003 |
Infineon Technologies |
DIODE SCHOTTKY 40V 0.12A SOT23-3 |
Cut Tape (CT) | - | Schottky | 40V | 120mA (DC) | 1V @ 40mA | Small Signal =< 200mA (Io), Any Speed | 100ps | 1µA @ 30V | 5pF @ 0V, 1MHz | 275°C/W Jl | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | -55°C ~ 150°C |
|
|
|
BAS 40 B5003 |
Infineon Technologies |
DIODE SCHOTTKY 40V 0.12A SOT23-3 |
Digi-Reel® | - | Schottky | 40V | 120mA (DC) | 1V @ 40mA | Small Signal =< 200mA (Io), Any Speed | 100ps | 1µA @ 30V | 5pF @ 0V, 1MHz | 275°C/W Jl | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | -55°C ~ 150°C |
|
|
|
BAS 70 B5003 |
Infineon Technologies |
DIODE SCHOTTKY 70V 0.07A SOT23-3 |
Tape & Reel (TR) | - | Schottky | 70V | 70mA (DC) | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | 100ps | 100nA @ 50V | 2pF @ 0V, 1MHz | 310°C/W Jl | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | -55°C ~ 125°C |
|
|
|
BAS 70 B5003 |
Infineon Technologies |
DIODE SCHOTTKY 70V 0.07A SOT23-3 |
Cut Tape (CT) | - | Schottky | 70V | 70mA (DC) | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | 100ps | 100nA @ 50V | 2pF @ 0V, 1MHz | 310°C/W Jl | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | -55°C ~ 125°C |
|
|
|
BAS 70 B5003 |
Infineon Technologies |
DIODE SCHOTTKY 70V 0.07A SOT23-3 |
Digi-Reel® | - | Schottky | 70V | 70mA (DC) | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | 100ps | 100nA @ 50V | 2pF @ 0V, 1MHz | 310°C/W Jl | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | -55°C ~ 125°C |
|
|
|
BAT 54 B5003 |
Infineon Technologies |
DIODE SCHOTTKY 30V 0.2A SOT23-3 |
Tape & Reel (TR) | - | Schottky | 30V | 200mA (DC) | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 25V | 10pF @ 1V, 1MHz | 245°C/W Jl | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | 150°C (Max) |
|
|
|
BAT 54 B5003 |
Infineon Technologies |
DIODE SCHOTTKY 30V 0.2A SOT23-3 |
Cut Tape (CT) | - | Schottky | 30V | 200mA (DC) | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 25V | 10pF @ 1V, 1MHz | 245°C/W Jl | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | 150°C (Max) |
|
|
|
BAT 54 B5003 |
Infineon Technologies |
DIODE SCHOTTKY 30V 0.2A SOT23-3 |
Digi-Reel® | - | Schottky | 30V | 200mA (DC) | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 25V | 10pF @ 1V, 1MHz | 245°C/W Jl | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | 150°C (Max) |
|
|
|
BAT 64 B5003 |
Infineon Technologies |
DIODE SCHOTTKY 40V 0.12A SOT23-3 |
Tape & Reel (TR) | - | Schottky | 40V | 120mA | 750mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 30V | 6pF @ 1V, 1MHz | 255°C/W Jl | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | 150°C (Max) |
|
|
|
BAT 64 B5003 |
Infineon Technologies |
DIODE SCHOTTKY 40V 0.12A SOT23-3 |
Cut Tape (CT) | - | Schottky | 40V | 120mA | 750mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 30V | 6pF @ 1V, 1MHz | 255°C/W Jl | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | 150°C (Max) |
|
|
|
BAT 64 B5003 |
Infineon Technologies |
DIODE SCHOTTKY 40V 0.12A SOT23-3 |
Digi-Reel® | - | Schottky | 40V | 120mA | 750mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 30V | 6pF @ 1V, 1MHz | 255°C/W Jl | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | 150°C (Max) |
|
|
 |
BAT30FILM |
STMicroelectronics |
DIODE SCHOTTKY 30V 0.3A SOT23-3 |
Tape & Reel (TR) | - | Schottky | 30V | 300mA (DC) | 530mV @ 300mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 30V | 22pF @ 0V, 1MHz | 500°C/W Ja | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 150°C (Max) |
|
|
|
BAT30FILM |
STMicroelectronics |
DIODE SCHOTTKY 30V 0.3A SOT23-3 |
Cut Tape (CT) | - | Schottky | 30V | 300mA (DC) | 530mV @ 300mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 30V | 22pF @ 0V, 1MHz | 500°C/W Ja | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 150°C (Max) |
