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Buy PDF Photo Part Number Manufacturer Description PackagingSeriesDiode TypeVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfSpeedReverse Recovery Time (trr)Current - Reverse Leakage @ VrCapacitance @ Vr, FThermal ResistanceMounting TypePackage / CaseSupplier Device PackageOperating Temperature - Junction
BAS69KFILM BAS69KFILM STMicroelectronics DIODE SCHOTTKY 15V 0.01A SOD523 Tape & Reel (TR)-Schottky15V10mA (DC)570mV @ 10mASmall Signal =< 200mA (Io), Any Speed-230nA @ 15V1pF @ 0V, 1MHz600°C/W JaSurface MountSC-79, SOD-523SOD-523150°C (Max)
S6BR S6BR GeneSiC Semiconductor DIODE GEN PURPOSE 100V 6A DO4 Bulk-Standard, Reverse Polarity100V6A1.1V @ 6AStandard Recovery >500ns, > 200mA (Io)-10µA @ 100V-2.5°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-65°C ~ 175°C
BAS69KFILM BAS69KFILM STMicroelectronics DIODE SCHOTTKY 15V 0.01A SOD523 Cut Tape (CT)-Schottky15V10mA (DC)570mV @ 10mASmall Signal =< 200mA (Io), Any Speed-230nA @ 15V1pF @ 0V, 1MHz600°C/W JaSurface MountSC-79, SOD-523SOD-523-65°C ~ 150°C
S6M S6M GeneSiC Semiconductor DIODE GEN PURPOSE 1KV 6A DO4 Bulk-Standard1000V (1kV)6A1.1V @ 6AStandard Recovery >500ns, > 200mA (Io)-10µA @ 100V-2.5°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-65°C ~ 175°C
BAS69KFILM BAS69KFILM STMicroelectronics DIODE SCHOTTKY 15V 0.01A SOD523 Digi-Reel®-Schottky15V10mA (DC)570mV @ 10mASmall Signal =< 200mA (Io), Any Speed-230nA @ 15V1pF @ 0V, 1MHz600°C/W JaSurface MountSC-79, SOD-523SOD-523150°C (Max)
S6MR S6MR GeneSiC Semiconductor DIODE GEN PURPOSE 1KV 6A DO4 Bulk-Standard, Reverse Polarity1000V (1kV)6A1.1V @ 6AStandard Recovery >500ns, > 200mA (Io)-10µA @ 100V-2.5°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-65°C ~ 175°C
BAT30JFILM BAT30JFILM STMicroelectronics DIODE SCHOTTKY 30V 0.3A SOD323 Tape & Reel (TR)-Schottky30V300mA (DC)530mV @ 300mAFast Recovery =< 500ns, > 200mA (Io)-5µA @ 30V22pF @ 0V, 1MHz550°C/W JaSurface MountSC-76, SOD-323SOD-323150°C (Max)
BAT30JFILM BAT30JFILM STMicroelectronics DIODE SCHOTTKY 30V 0.3A SOD323 Cut Tape (CT)-Schottky30V300mA (DC)530mV @ 300mAFast Recovery =< 500ns, > 200mA (Io)-5µA @ 30V22pF @ 0V, 1MHz550°C/W JaSurface MountSC-76, SOD-323SOD-323150°C (Max)
IDH10S60C IDH10S60C Infineon Technologies DIODE SCHOTTKY 600V 10A TO220-2 TubethinQ!™Silicon Carbide Schottky600V10A (DC)1.7V @ 10ANo Recovery Time > 500mA (Io)0ns140µA @ 600V480pF @ 1V, 1MHz1.5°C/W JcThrough HoleTO-220-2PG-TO220-2-55°C ~ 175°C
BAT30JFILM BAT30JFILM STMicroelectronics DIODE SCHOTTKY 30V 0.3A SOD323 Digi-Reel®-Schottky30V300mA (DC)530mV @ 300mAFast Recovery =< 500ns, > 200mA (Io)-5µA @ 30V22pF @ 0V, 1MHz550°C/W JaSurface MountSC-76, SOD-323SOD-323150°C (Max)
S16M S16M GeneSiC Semiconductor DIODE GEN PURP 1000V 16A DO4 Bulk-Standard1000V (1kV)16A1.1V @ 16AStandard Recovery >500ns, > 200mA (Io)-10µA @ 50V-2.5°C/W JcChassis, Stud MountDO-203AA, DO-4, Stud--65°C ~ 175°C
BAT54ZFILM BAT54ZFILM STMicroelectronics DIODE SCHOTTKY 40V 0.3A SOD123 Tape & Reel (TR)-Schottky40V300mA (DC)900mV @ 100mAFast Recovery =< 500ns, > 200mA (Io)5ns1µA @ 30V10pF @ 1V, 1MHz500°C/W JaSurface MountSOD-123SOD-123-40°C ~ 150°C
APT60S20SG APT60S20SG Microsemi Power Products Group DIODE SCHOTTKY 200V 75A D3 Tube-Schottky200V75A900mV @ 60AFast Recovery =< 500ns, > 200mA (Io)55ns1mA @ 200V-0.3°C/W JcSurface MountTO-268-3, D³Pak (2 Leads + Tab), TO-268AAD3 [S]-55°C ~ 150°C
BAT54ZFILM BAT54ZFILM STMicroelectronics DIODE SCHOTTKY 40V 0.3A SOD123 Cut Tape (CT)-Schottky40V300mA (DC)900mV @ 100mAFast Recovery =< 500ns, > 200mA (Io)5ns1µA @ 30V10pF @ 1V, 1MHz500°C/W JaSurface MountSOD-123SOD-123-40°C ~ 150°C
APT60S20SG/TR APT60S20SG/TR Microsemi Power Products Group DIODE SCHOTTKY 200V 75A D3PAK Tape & Reel (TR)-Schottky200V75A900mV @ 60AFast Recovery =< 500ns, > 200mA (Io)55ns1mA @ 200V-0.3°C/W JcSurface MountTO-268-3, D³Pak (2 Leads + Tab), TO-268AAD3Pak-55°C ~ 150°C
BAT54ZFILM BAT54ZFILM STMicroelectronics DIODE SCHOTTKY 40V 0.3A SOD123 Digi-Reel®-Schottky40V300mA (DC)900mV @ 100mAFast Recovery =< 500ns, > 200mA (Io)5ns1µA @ 30V10pF @ 1V, 1MHz500°C/W JaSurface MountSOD-123SOD-123-40°C ~ 150°C
JAN1N3611 JAN1N3611 Microsemi HI-REL [MIL] DIODE STD REC 200V 1A BulkMilitary, MIL-PRF-19500/228Standard200V1A1.1V @ 1AStandard Recovery >500ns, > 200mA (Io)-100µA @ 300V-38°C/W JlThrough HoleA, Axial*-65°C ~ 175°C
1N5821RL 1N5821RL STMicroelectronics DIODE SCHOTTKY 30V 3A DO201AD Tape & Reel (TR)-Schottky30V3A500mV @ 3AFast Recovery =< 500ns, > 200mA (Io)-2mA @ 30V-80°C/W JaThrough HoleDO-201AD, AxialDO-201AD150°C (Max)
JAN1N4245 JAN1N4245 Microsemi HI-REL [MIL] DIODE STD REC 200V 1A BulkMilitary, MIL-PRF-19500/286Standard200V1A1.3V @ 3AStandard Recovery >500ns, > 200mA (Io)5µs1µA @ 200V-42°C/W JlThrough HoleA, Axial*-65°C ~ 175°C
1N5821RL 1N5821RL STMicroelectronics DIODE SCHOTTKY 30V 3A DO201AD Cut Tape (CT)-Schottky30V3A500mV @ 3AFast Recovery =< 500ns, > 200mA (Io)-2mA @ 30V-80°C/W JaThrough HoleDO-201AD, AxialDO-201AD150°C (Max)
1N5621 1N5621 Microsemi Commercial Components Group DIODE RECT STD REC A-PKG Bulk-Standard800V1A1.6V @ 3AFast Recovery =< 500ns, > 200mA (Io)300ns500nA @ 800V20pF @ 12V, 1MHz38°C/W JlThrough HoleA, Axial*-65°C ~ 175°C
BAS 16-02V E6327 BAS 16-02V E6327 Infineon Technologies DIODE SWITCHING 80V 0.2A SC79-2 Tape & Reel (TR)-Standard80V200mA (DC)1.25V @ 150mASmall Signal =< 200mA (Io), Any Speed4ns1µA @ 75V2pF @ 0V, 1MHz120°C/W JlSurface MountSC-79, SOD-523PG-SC79-2150°C (Max)
GKN26/04 GKN26/04 GeneSiC Semiconductor DIODE GEN PURPOSE 400V 25A DO4 Bulk-Standard400V25A1.55V @ 60AStandard Recovery >500ns, > 200mA (Io)-4mA @ 400V-2°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-40°C ~ 180°C
BAS 16-02W E6327 BAS 16-02W E6327 Infineon Technologies DIODE SWITCHING 80V 0.2A SCD80-2 Tape & Reel (TR)-Standard80V200mA (DC)1.25V @ 150mASmall Signal =< 200mA (Io), Any Speed4ns1µA @ 75V2pF @ 0V, 1MHz135°C/W JlSurface MountSC-80PG-SCD80-2150°C (Max)
BAS 16W E6433 BAS 16W E6433 Infineon Technologies DIODE SWITCH 80V 0.25A SOT323-3 Tape & Reel (TR)-Standard80V250mA (DC)1.25V @ 150mAFast Recovery =< 500ns, > 200mA (Io)4ns1µA @ 75V2pF @ 0V, 1MHz125°C/W JlSurface MountSC-70, SOT-323PG-SOT323-3150°C (Max)
S25G S25G GeneSiC Semiconductor DIODE GEN PURPOSE 400V 25A DO4 Bulk-Standard400V25A1.1V @ 25AStandard Recovery >500ns, > 200mA (Io)-10µA @ 50V-2.5°C/W JcChassis, Stud MountDO-203AA, DO-4, Stud--65°C ~ 175°C
BAS 52-02V E6127 BAS 52-02V E6127 Infineon Technologies DIODE SCHOTTKY 45V 0.75A SC79-2 Tape & Reel (TR)-Schottky45V750mA (DC)600mV @ 200mAFast Recovery =< 500ns, > 200mA (Io)-10µA @ 45V10pF @ 10V, 1MHz60°C/W JlSurface MountSC-79, SOD-523PG-SC79-2150°C (Max)
1N5622 1N5622 Microsemi Commercial Components Group DIODE RECT STD REC A-PKG Bulk-Standard1000V (1kV)1A1.3V @ 3AStandard Recovery >500ns, > 200mA (Io)2µs500nA @ 1000V-38°C/W JlThrough HoleA, Axial*-65°C ~ 200°C
BAS 52-02V E6327 BAS 52-02V E6327 Infineon Technologies DIODE SCHOTTKY 45V 0.75A SC79-2 Tape & Reel (TR)-Schottky45V750mA (DC)600mV @ 200mAFast Recovery =< 500ns, > 200mA (Io)-10µA @ 45V10pF @ 10V, 1MHz60°C/W JlSurface MountSC-79, SOD-523PG-SC79-2150°C (Max)
1N5802 1N5802 Microsemi Commercial Components Group DIODE RECT ULT FAST REC A-PKG Bulk-Standard50V1A875mV @ 1AFast Recovery =< 500ns, > 200mA (Io)25ns1µA @ 50V25pF @ 10V, 1MHz36°C/W JlThrough HoleA, Axial*-65°C ~ 175°C
BAS 70-02W E6327 BAS 70-02W E6327 Infineon Technologies DIODE SCHOTTKY 70V 0.07A SCD80-2 Tape & Reel (TR)-Schottky70V70mA (DC)1V @ 15mASmall Signal =< 200mA (Io), Any Speed100ps100nA @ 50V2pF @ 0V, 1MHz170°C/W JlSurface MountSC-80PG-SCD80-2-55°C ~ 125°C
CDLL1A60 CDLL1A60 Microsemi HI-REL [MIL] DIODE SCHOTTKY DO-213AA Bulk-Schottky60V1A690mV @ 1AFast Recovery =< 500ns, > 200mA (Io)-100µA @ 60V0.9pF @ 5V, 1MHz220°C/W JaSurface MountDO-213AB, MELFDO-213AB-
BAT 60B E6433 BAT 60B E6433 Infineon Technologies DIODE SCHOTTKY 10V 3A SOD323-2 Tape & Reel (TR)-Schottky10V3A (DC)600mV @ 1AFast Recovery =< 500ns, > 200mA (Io)-25µA @ 8V30pF @ 5V, 1MHz90°C/W JlSurface MountSC-76, SOD-323PG-SOD323-2150°C (Max)
S16QR S16QR GeneSiC Semiconductor DIODE GEN PURP 1200V 16A DO4 Bulk-Standard, Reverse Polarity1200V (1.2kV)16A1.1V @ 16AStandard Recovery >500ns, > 200mA (Io)-10µA @ 50V-2.5°C/W JcChassis, Stud MountDO-203AA, DO-4, Stud--65°C ~ 175°C
BAT 64-02W E6327 BAT 64-02W E6327 Infineon Technologies DIODE SCHOTTKY 40V 0.12A SCD80-2 Tape & Reel (TR)-Schottky40V120mA750mV @ 100mASmall Signal =< 200mA (Io), Any Speed5ns2µA @ 30V6pF @ 1V, 1MHz115°C/W JlSurface MountSC-80PG-SCD80-2150°C (Max)
UPR60/TR13 UPR60/TR13 Microsemi Commercial Components Group DIODE ULT FAST 2A 600V POWERMITE Tape & Reel (TR)-Standard600V2A1.6V @ 2AFast Recovery =< 500ns, > 200mA (Io)30ns1µA @ 600V-10°C/W JcSurface MountDO-216AAPowermite-55°C ~ 150°C
MMBD 914 LT3 MMBD 914 LT3 Infineon Technologies DIODE SW 100V 0.25A SOT23-3 Tape & Reel (TR)-Standard100V250mA (DC)1.25V @ 150mAFast Recovery =< 500ns, > 200mA (Io)4ns100nA @ 75V2pF @ 0V, 1MHz260°C/W JlSurface MountTO-236-3, SC-59, SOT-23-3PG-SOT23-3150°C (Max)
1N3893 1N3893 GeneSiC Semiconductor DIODE FAST REC 600V 12A DO4 Bulk-Standard600V12A1.4V @ 12AFast Recovery =< 500ns, > 200mA (Io)200ns25µA @ 50V-2°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-65°C ~ 150°C
SDB06S60 SDB06S60 Infineon Technologies DIODE SCHOTTKY 600V 6A D2PAK Tape & Reel (TR)thinQ!™Silicon Carbide Schottky600V6A (DC)1.7V @ 6ANo Recovery Time > 500mA (Io)0ns200µA @ 600V300pF @ 0V, 1MHz2.6°C/W JcSurface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD²PAK-55°C ~ 175°C
FR12G02 FR12G02 GeneSiC Semiconductor DIODE FAST REC 400V 12A DO4 Bulk-Standard400V12A1.4V @ 12AFast Recovery =< 500ns, > 200mA (Io)200ns25µA @ 100V-2.5°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-65°C ~ 150°C
FR12GR02 FR12GR02 GeneSiC Semiconductor DIODE FAST REC 400V 12A DO4 Bulk-Standard, Reverse Polarity400V12A1.4V @ 12AFast Recovery =< 500ns, > 200mA (Io)200ns25µA @ 100V-2.5°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-65°C ~ 150°C
SDD04S60 SDD04S60 Infineon Technologies DIODE SCHOTTKY 600V 4A TO252-3 Tape & Reel (TR)thinQ!™Silicon Carbide Schottky600V4A (DC)1.9V @ 4ANo Recovery Time > 500mA (Io)0ns200µA @ 600V150pF @ 0V, 1MHz4.1°C/W JcSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63P-TO252-3-55°C ~ 175°C
FR12GR05 FR12GR05 GeneSiC Semiconductor DIODE FAST REC 400V 12A DO4 Bulk-Standard, Reverse Polarity400V12A1.4V @ 12AFast Recovery =< 500ns, > 200mA (Io)500ns25µA @ 100V-2°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-65°C ~ 150°C
SDP10S30 SDP10S30 Infineon Technologies DIODE SCHOTTKY 300V 10A TO220-3 TubethinQ!™Silicon Carbide Schottky300V10A (DC)1.7V @ 10ANo Recovery Time > 500mA (Io)0ns200µA @ 300V600pF @ 0V, 1MHz2.3°C/W JcThrough HoleTO-220-3PG-TO220-3-55°C ~ 175°C
FR12K05 FR12K05 GeneSiC Semiconductor DIODE FAST REC 800V 12A DO4 Bulk-Standard800V12A1.4V @ 12AFast Recovery =< 500ns, > 200mA (Io)500ns25µA @ 100V-2°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-65°C ~ 150°C
SDT05S60 SDT05S60 Infineon Technologies DIODE SCHOTTKY 600V 5A TO220-2 TubethinQ!™Silicon Carbide Schottky600V5A (DC)1.7V @ 5ANo Recovery Time > 500mA (Io)0ns200µA @ 600V170pF @ 1V, 1MHz3.5°C/W JcThrough HoleTO-220-2PG-TO220-2-55°C ~ 175°C
FR12KR05 FR12KR05 GeneSiC Semiconductor DIODE FAST REC 800V 12A DO4 Bulk-Standard, Reverse Polarity800V12A1.4V @ 12AFast Recovery =< 500ns, > 200mA (Io)500ns25µA @ 100V-2°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-65°C ~ 150°C
SDT08S60 SDT08S60 Infineon Technologies DIODE SCHOTTKY 600V 8A TO220-2 TubethinQ!™Silicon Carbide Schottky600V8A (DC)1.7V @ 8ANo Recovery Time > 500mA (Io)0ns300µA @ 600V280pF @ 0V, 1MHz2.3°C/W JcThrough HoleTO-220-2PG-TO220-2-55°C ~ 175°C
FR12MR05 FR12MR05 GeneSiC Semiconductor DIODE FAST REC 1KV 12A DO4 Bulk-Standard, Reverse Polarity1000V (1kV)12A1.4V @ 12AFast Recovery =< 500ns, > 200mA (Io)500ns25µA @ 100V-2°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-65°C ~ 150°C
SDT10S60 SDT10S60 Infineon Technologies DIODE SCHOTTKY 600V 10A TO220-2 TubethinQ!™Silicon Carbide Schottky600V10A (DC)1.7V @ 10ANo Recovery Time > 500mA (Io)0ns350µA @ 600V350pF @ 0V, 1MHz2°C/W JcThrough HoleTO-220-2PG-TO220-2-55°C ~ 175°C
FR16B02 FR16B02 GeneSiC Semiconductor DIODE FAST REC 100V 16A DO4 Bulk-Standard100V16A1.4V @ 16AFast Recovery =< 500ns, > 200mA (Io)200ns25µA @ 100V-1.5°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-65°C ~ 150°C
SIDC01D120H6 SIDC01D120H6 Infineon Technologies DIODE SWITCHING 1.2KV 0.6A WAFER Bulk-Standard1200V (1.2kV)600mA (DC)1.6V @ 600mAStandard Recovery >500ns, > 200mA (Io)-27µA @ 1200V--Surface MountWaferSawn on foil-55°C ~ 150°C
FR16B05 FR16B05 GeneSiC Semiconductor DIODE FAST REC 100V 16A DO4 Bulk-Standard100V16A1.4V @ 16AFast Recovery =< 500ns, > 200mA (Io)500ns25µA @ 100V-1.5°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-65°C ~ 150°C
- SIDC01D60C6 SIDC01D60C6 Infineon Technologies DIODE SWITCHING WAFER Bulk-Standard---Standard Recovery >500ns, > 200mA (Io)----Surface MountWaferSawn on foil-55°C ~ 150°C
FR16BR02 FR16BR02 GeneSiC Semiconductor DIODE FAST REC 100V 16A DO4 Bulk-Standard, Reverse Polarity100V16A1.4V @ 16AFast Recovery =< 500ns, > 200mA (Io)200ns25µA @ 100V-1.5°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-65°C ~ 150°C
SIDC02D60C6 SIDC02D60C6 Infineon Technologies DIODE SWITCHING 600V 6A WAFER Bulk-Standard600V6A (DC)1.95V @ 6AStandard Recovery >500ns, > 200mA (Io)-27µA @ 600V--Surface MountWaferSawn on foil-40°C ~ 175°C
FR16BR05 FR16BR05 GeneSiC Semiconductor DIODE FAST REC 100V 16A DO4 Bulk-Standard, Reverse Polarity100V16A1.4V @ 16AFast Recovery =< 500ns, > 200mA (Io)500ns25µA @ 100V-1.5°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-65°C ~ 150°C
SIDC02D60F6 SIDC02D60F6 Infineon Technologies DIODE SWITCHING 600V 3A WAFER Bulk-Standard600V3A (DC)1.6V @ 3AFast Recovery =< 500ns, > 200mA (Io)-27µA @ 600V--Surface MountWaferSawn on foil-40°C ~ 150°C
FR16KR05 FR16KR05 GeneSiC Semiconductor DIODE FAST REC 800V 16A DO4 Bulk-Standard, Reverse Polarity800V16A1.4V @ 16AFast Recovery =< 500ns, > 200mA (Io)500ns25µA @ 100V-1.5°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-65°C ~ 150°C
SIDC03D120F6 SIDC03D120F6 Infineon Technologies DIODE SWITCHING 1200V 2A WAFER Bulk-Standard1200V (1.2kV)2A (DC)2.1V @ 2AStandard Recovery >500ns, > 200mA (Io)-27µA @ 1200V--Surface MountWaferSawn on foil-55°C ~ 150°C
FR16M05 FR16M05 GeneSiC Semiconductor DIODE FAST REC 1KV 16A DO4 Bulk-Standard1000V (1kV)16A1.4V @ 16AFast Recovery =< 500ns, > 200mA (Io)500ns25µA @ 100V-1.5°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-65°C ~ 150°C
SIDC03D120H6 SIDC03D120H6 Infineon Technologies DIODE SWITCHING 1200V 3A WAFER Bulk-Standard1200V (1.2kV)3A (DC)1.6V @ 3AStandard Recovery >500ns, > 200mA (Io)-27µA @ 1200V--Surface MountWaferSawn on foil-55°C ~ 150°C
FR16MR05 FR16MR05 GeneSiC Semiconductor DIODE FAST REC 1KV 16A DO4 Bulk-Standard, Reverse Polarity1000V (1kV)16A1.4V @ 16AFast Recovery =< 500ns, > 200mA (Io)500ns25µA @ 100V-1.5°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-65°C ~ 150°C
SIDC03D60C6 SIDC03D60C6 Infineon Technologies DIODE SWITCHING 600V 10A WAFER Bulk-Standard600V10A (DC)1.95V @ 10AStandard Recovery >500ns, > 200mA (Io)-27µA @ 600V--Surface MountWaferSawn on foil-40°C ~ 175°C
FR6D02 FR6D02 GeneSiC Semiconductor DIODE FAST REC 200V 6A DO4 Bulk-Standard200V6A1.4V @ 6AFast Recovery =< 500ns, > 200mA (Io)200ns25µA @ 50V-2.5°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-65°C ~ 150°C
SIDC03D60F6 SIDC03D60F6 Infineon Technologies DIODE SWITCHING 600V 6A WAFER Bulk-Standard600V6A (DC)1.6V @ 6AFast Recovery =< 500ns, > 200mA (Io)-27µA @ 600V--Surface MountWaferSawn on foil-40°C ~ 150°C
FR6D05 FR6D05 GeneSiC Semiconductor DIODE FAST REC 200V 16A DO4 Bulk-Standard200V16A1.4V @ 6AFast Recovery =< 500ns, > 200mA (Io)500ns25µA @ 50V-2.5°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-65°C ~ 150°C
SIDC04D60F6 SIDC04D60F6 Infineon Technologies DIODE SWITCHING 600V 9A WAFER Bulk-Standard600V9A (DC)1.6V @ 9AFast Recovery =< 500ns, > 200mA (Io)-27µA @ 600V--Surface MountWaferSawn on foil-40°C ~ 150°C
FR6GR02 FR6GR02 GeneSiC Semiconductor DIODE FAST REC 400V 6A DO4 Bulk-Standard, Reverse Polarity400V6A1.4V @ 6AFast Recovery =< 500ns, > 200mA (Io)200ns25µA @ 50V-2.5°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-65°C ~ 150°C
SIDC05D60C6 SIDC05D60C6 Infineon Technologies DIODE SWITCHING 600V 15A WAFER Bulk-Standard600V15A (DC)1.95V @ 15AStandard Recovery >500ns, > 200mA (Io)-27µA @ 600V--Surface MountWaferSawn on foil-40°C ~ 175°C
FR6GR05 FR6GR05 GeneSiC Semiconductor DIODE FAST REC 400V 16A DO4 Bulk-Standard, Reverse Polarity400V16A1.4V @ 6AFast Recovery =< 500ns, > 200mA (Io)500ns25µA @ 50V-2.5°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-65°C ~ 150°C
SIDC06D120E6 SIDC06D120E6 Infineon Technologies DIODE SWITCHING 1200V 5A WAFER Bulk-Standard1200V (1.2kV)5A (DC)1.9V @ 5AStandard Recovery >500ns, > 200mA (Io)-27µA @ 1200V--Surface MountWaferSawn on foil-55°C ~ 150°C
FR6J02 FR6J02 GeneSiC Semiconductor DIODE FAST REC 600V 6A DO4 Bulk-Standard600V6A1.4V @ 6AFast Recovery =< 500ns, > 200mA (Io)250ns25µA @ 50V-2.5°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-65°C ~ 150°C
SIDC06D120F6 SIDC06D120F6 Infineon Technologies DIODE SWITCHING 1200V 5A WAFER Bulk-Standard1200V (1.2kV)5A (DC)2.1V @ 5AStandard Recovery >500ns, > 200mA (Io)-27µA @ 1200V--Surface MountWaferSawn on foil-55°C ~ 150°C
FR6J05 FR6J05 GeneSiC Semiconductor DIODE FAST REC 600V 6A DO4 Bulk-Standard600V6A1.4V @ 6AFast Recovery =< 500ns, > 200mA (Io)500ns25µA @ 50V-2.5°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-65°C ~ 150°C
SIDC06D120H6 SIDC06D120H6 Infineon Technologies DIODE SWITCHING 1200V 7.5A WAFER Bulk-Standard1200V (1.2kV)7.5A (DC)1.6V @ 7.5AStandard Recovery >500ns, > 200mA (Io)-27µA @ 1200V--Surface MountWaferSawn on foil-55°C ~ 150°C
FR6JR02 FR6JR02 GeneSiC Semiconductor DIODE FAST REC 600V 6A DO4 Bulk-Standard, Reverse Polarity600V6A1.4V @ 6AFast Recovery =< 500ns, > 200mA (Io)250ns25µA @ 50V-2.5°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-65°C ~ 150°C
SIDC06D60AC6 SIDC06D60AC6 Infineon Technologies DIODE SWITCHING 600V 20A WAFER Bulk-Standard600V20A (DC)1.95V @ 20AStandard Recovery >500ns, > 200mA (Io)-27µA @ 600V--Surface MountWaferSawn on foil-40°C ~ 175°C
FR6JR05 FR6JR05 GeneSiC Semiconductor DIODE FAST REC 600V 6A DO4 Bulk-Standard, Reverse Polarity600V6A1.4V @ 6AFast Recovery =< 500ns, > 200mA (Io)500ns25µA @ 50V-2.5°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-65°C ~ 150°C
SIDC06D60C6 SIDC06D60C6 Infineon Technologies DIODE SWITCHING 600V 20A WAFER Bulk-Standard600V20A (DC)1.95V @ 20AStandard Recovery >500ns, > 200mA (Io)-27µA @ 600V--Surface MountWaferSawn on foil-40°C ~ 175°C
FR6K05 FR6K05 GeneSiC Semiconductor DIODE FAST REC 800V 6A DO4 Bulk-Standard800V6A1.4V @ 6AFast Recovery =< 500ns, > 200mA (Io)500ns25µA @ 50V-2.5°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-65°C ~ 150°C
SIDC06D60E6 SIDC06D60E6 Infineon Technologies DIODE SWITCHING 600V 10A WAFER Bulk-Standard600V10A (DC)1.25V @ 10AStandard Recovery >500ns, > 200mA (Io)-27µA @ 600V--Surface MountWaferSawn on foil-55°C ~ 150°C
FR6KR05 FR6KR05 GeneSiC Semiconductor DIODE FAST REC 800V 6A DO4 Bulk-Standard, Reverse Polarity800V6A1.4V @ 6AFast Recovery =< 500ns, > 200mA (Io)500ns25µA @ 50V-2.5°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-65°C ~ 150°C
SIDC06D60F6 SIDC06D60F6 Infineon Technologies DIODE SWITCHING 600V 15A WAFER Bulk-Standard600V15A (DC)1.6V @ 15AFast Recovery =< 500ns, > 200mA (Io)-27µA @ 600V--Surface MountWaferSawn on foil-40°C ~ 150°C
FR6M05 FR6M05 GeneSiC Semiconductor DIODE FAST REC 1KV 6A DO4 Bulk-Standard1000V (1kV)6A1.4V @ 6AFast Recovery =< 500ns, > 200mA (Io)500ns25µA @ 50V-2.5°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-65°C ~ 150°C
SIDC07D60AF6 SIDC07D60AF6 Infineon Technologies DIODE SWITCHING 600V 22.5A WAFER Bulk-Standard600V22.5A (DC)1.6V @ 22.5AFast Recovery =< 500ns, > 200mA (Io)-27µA @ 600V--Surface MountWaferSawn on foil-40°C ~ 150°C
FR6MR05 FR6MR05 GeneSiC Semiconductor DIODE FAST REC 1KV 6A DO4 Bulk-Standard, Reverse Polarity1000V (1kV)6A1.4V @ 6AFast Recovery =< 500ns, > 200mA (Io)500ns25µA @ 50V-2.5°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-65°C ~ 150°C
SIDC07D60E6 SIDC07D60E6 Infineon Technologies DIODE SWITCHING 600V 15A WAFER Bulk-Standard600V15A (DC)1.25V @ 15AStandard Recovery >500ns, > 200mA (Io)-250µA @ 600V--Surface MountWaferSawn on foil-55°C ~ 150°C
GKN26/12 GKN26/12 GeneSiC Semiconductor DIODE GEN PURPOSE 1.2KV 25A DO4 Bulk-Standard1200V (1.2kV)25A1.55V @ 60AStandard Recovery >500ns, > 200mA (Io)-4mA @ 1200V-2°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-40°C ~ 180°C
SIDC07D60F6 SIDC07D60F6 Infineon Technologies DIODE SWITCHING 600V 22.5A WAFER Bulk-Standard600V22.5A (DC)1.6V @ 22.5AFast Recovery =< 500ns, > 200mA (Io)-27µA @ 600V--Surface MountWaferSawn on foil-40°C ~ 150°C
GKN26/14 GKN26/14 GeneSiC Semiconductor DIODE GEN PURPOSE 1.4KV 25A DO4 Bulk-Standard1400V (1.4kV)25A1.55V @ 60AStandard Recovery >500ns, > 200mA (Io)-4mA @ 1400V-2°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-40°C ~ 180°C
SIDC08D120F6 SIDC08D120F6 Infineon Technologies DIODE SWITCHING 1200V 7A WAFER Bulk-Standard1200V (1.2kV)7A (DC)2.1V @ 7AStandard Recovery >500ns, > 200mA (Io)-27µA @ 1200V--Surface MountWaferSawn on foil-55°C ~ 150°C
GKN26/16 GKN26/16 GeneSiC Semiconductor DIODE GEN PURPOSE 1.6KV 25A DO4 Bulk-Standard1600V (1.6kV)25A1.55V @ 60AStandard Recovery >500ns, > 200mA (Io)-4mA @ 1600V-2°C/W JcChassis, Stud MountDO-203AA, DO-4, StudDO-4-40°C ~ 180°C
SIDC08D120H6 SIDC08D120H6 Infineon Technologies DIODE SWITCHING 1200V 10A WAFER Bulk-Standard1200V (1.2kV)10A (DC)1.6V @ 10AStandard Recovery >500ns, > 200mA (Io)-27µA @ 1200V--Surface MountWaferSawn on foil-55°C ~ 150°C
GKN71/04 GKN71/04 GeneSiC Semiconductor DIODE GEN PURPOSE 400V 95A DO5 Bulk-Standard400V95A1.5V @ 60AStandard Recovery >500ns, > 200mA (Io)-10mA @ 400V-0.55°C/W JcChassis, Stud MountDO-203AB, DO-5, StudDO-5-40°C ~ 180°C
SIDC08D60C6 SIDC08D60C6 Infineon Technologies DIODE SWITCHING 600V 30A WAFER Bulk-Standard600V30A (DC)1.95V @ 30AStandard Recovery >500ns, > 200mA (Io)-27µA @ 600V--Surface MountWaferSawn on foil-40°C ~ 175°C
GKN71/08 GKN71/08 GeneSiC Semiconductor DIODE GEN PURPOSE 800V 95A DO5 Bulk-Standard800V95A1.5V @ 60AStandard Recovery >500ns, > 200mA (Io)-10mA @ 800V-0.55°C/W JcChassis, Stud MountDO-203AB, DO-5, StudDO-5-40°C ~ 180°C
SIDC08D60C6Y SIDC08D60C6Y Infineon Technologies DIODE SWITCHING 600V 30A WAFER Bulk-Standard600V30A (DC)1.95V @ 30AStandard Recovery >500ns, > 200mA (Io)-27µA @ 600V--Surface MountWaferSawn on foil-40°C ~ 175°C
GKN71/12 GKN71/12 GeneSiC Semiconductor DIODE GEN PURPOSE 1.2KV 95A DO5 Bulk-Standard1200V (1.2kV)95A1.5V @ 60AStandard Recovery >500ns, > 200mA (Io)-10mA @ 1200V-0.55°C/W JcChassis, Stud MountDO-203AB, DO-5, StudDO-5-40°C ~ 180°C
SIDC09D60E6 SIDC09D60E6 Infineon Technologies DIODE SWITCHING 600V 20A WAFER Bulk-Standard600V20A (DC)1.7V @ 20AFast Recovery =< 500ns, > 200mA (Io)150ns27µA @ 600V--Surface MountWaferSawn on foil-55°C ~ 150°C
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