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Part Number |
Manufacturer |
Description |
Packaging | Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case | Supplier Device Package |
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ZXMP6A18KTC |
Diodes Incorporated |
MOSFET P-CHAN 60V DPAK |
Digi-Reel® | - | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 60V | 6.8A (Ta) | 55 mOhm @ 3.5A, 10V | 1V @ 250µA | 44nC @ 10V | 1580pF @ 30V | 2.15W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 |
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AOD242 |
Alpha & Omega Semiconductor Inc |
MOSFET N-CH 40V 14.5A TO252 |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 40V | 14.5A (Ta), 54A (Tc) | 5.8 mOhm @ 20A, 10V | 2.3V @ 250µA | 28nC @ 10V | 1350pF @ 20V | 2.5W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) |
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AOD242 |
Alpha & Omega Semiconductor Inc |
MOSFET N-CH 40V 14.5A TO252 |
Cut Tape (CT) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 40V | 14.5A (Ta), 54A (Tc) | 5.8 mOhm @ 20A, 10V | 2.3V @ 250µA | 28nC @ 10V | 1350pF @ 20V | 2.5W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) |
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SI6423DQ-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH 12V 8.2A 8-TSSOP |
Tape & Reel (TR) | - | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 12V | 8.2A (Ta) | 8.5 mOhm @ 9.5A, 4.5V | 800mV @ 400µA | 110nC @ 5V | - | 1.05W | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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AOD242 |
Alpha & Omega Semiconductor Inc |
MOSFET N-CH 40V 14.5A TO252 |
Digi-Reel® | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 40V | 14.5A (Ta), 54A (Tc) | 5.8 mOhm @ 20A, 10V | 2.3V @ 250µA | 28nC @ 10V | 1350pF @ 20V | 2.5W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) |
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SI6423DQ-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH 12V 8.2A 8-TSSOP |
Cut Tape (CT) | - | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 12V | 8.2A (Ta) | 8.5 mOhm @ 9.5A, 4.5V | 800mV @ 400µA | 110nC @ 5V | - | 1.05W | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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IRF640NSTRRPBF |
International Rectifier |
MOSFET N-CH 200V 18A D2PAK |
Tape & Reel (TR) | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 200V | 18A | 150 mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | 1160pF @ 25V | 150W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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SI6423DQ-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH 12V 8.2A 8-TSSOP |
Digi-Reel® | - | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 12V | 8.2A (Ta) | 8.5 mOhm @ 9.5A, 4.5V | 800mV @ 400µA | 110nC @ 5V | - | 1.05W | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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IRF640NSTRRPBF |
International Rectifier |
MOSFET N-CH 200V 18A D2PAK |
Cut Tape (CT) | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 200V | 18A | 150 mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | 1160pF @ 25V | 150W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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ZVN4206A |
Diodes Incorporated |
MOSFET N-CH 60V 600MA TO92-3 |
Bulk | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 60V | 600mA (Ta) | 1 Ohm @ 1.5A, 10V | 3V @ 1mA | - | 100pF @ 25V | 700mW | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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IRF640NSTRRPBF |
International Rectifier |
MOSFET N-CH 200V 18A D2PAK |
Digi-Reel® | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 200V | 18A | 150 mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | 1160pF @ 25V | 150W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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FDB12N50TM |
Fairchild Semiconductor |
MOSFET N-CH 500V 11.5A D2PAK |
Tape & Reel (TR) | UniFET™ | MOSFET N-Channel, Metal Oxide | Standard | 500V | 11.5A (Tc) | 650 mOhm @ 6A, 10V | 5V @ 250µA | 30nC @ 10V | 1315pF @ 25V | 165W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK |
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SI3499DV-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH 8V 5.3A 6-TSOP |
Tape & Reel (TR) | TrenchFET® | MOSFET P-Channel, Metal Oxide | Logic Level Gate, 1.5V Drive | 8V | 5.3A (Ta) | 23 mOhm @ 7A, 4.5V | 750mV @ 250µA | 42nC @ 4.5V | - | 1.1W | Surface Mount | 6-TSOP (0.065", 1.65mm Width) | 6-TSOP |
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FDB12N50TM |
Fairchild Semiconductor |
MOSFET N-CH 500V 11.5A D2PAK |
Cut Tape (CT) | UniFET™ | MOSFET N-Channel, Metal Oxide | Standard | 500V | 11.5A (Tc) | 650 mOhm @ 6A, 10V | 5V @ 250µA | 30nC @ 10V | 1315pF @ 25V | 165W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK |
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SI3499DV-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH 8V 5.3A 6-TSOP |
Cut Tape (CT) | TrenchFET® | MOSFET P-Channel, Metal Oxide | Logic Level Gate, 1.5V Drive | 8V | 5.3A (Ta) | 23 mOhm @ 7A, 4.5V | 750mV @ 250µA | 42nC @ 4.5V | - | 1.1W | Surface Mount | 6-TSOP (0.065", 1.65mm Width) | 6-TSOP |
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FDB12N50TM |
Fairchild Semiconductor |
MOSFET N-CH 500V 11.5A D2PAK |
Digi-Reel® | UniFET™ | MOSFET N-Channel, Metal Oxide | Standard | 500V | 11.5A (Tc) | 650 mOhm @ 6A, 10V | 5V @ 250µA | 30nC @ 10V | 1315pF @ 25V | 165W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK |
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SI3499DV-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH 8V 5.3A 6-TSOP |
Digi-Reel® | TrenchFET® | MOSFET P-Channel, Metal Oxide | Logic Level Gate, 1.5V Drive | 8V | 5.3A (Ta) | 23 mOhm @ 7A, 4.5V | 750mV @ 250µA | 42nC @ 4.5V | - | 1.1W | Surface Mount | 6-TSOP (0.065", 1.65mm Width) | 6-TSOP |
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NDB6020P |
Fairchild Semiconductor |
MOSFET P-CH 20V 24A D2PAK |
Tape & Reel (TR) | - | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 20V | 24A (Tc) | 50 mOhm @ 12A, 4.5V | 1V @ 250µA | 35nC @ 5V | 1590pF @ 10V | 60W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK |
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IRFR014PBF |
Vishay Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 60V | 7.7A (Tc) | 200 mOhm @ 4.6A, 10V | 4V @ 250µA | 11nC @ 10V | 300pF @ 25V | 2.5W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak |
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NDB6020P |
Fairchild Semiconductor |
MOSFET P-CH 20V 24A D2PAK |
Cut Tape (CT) | - | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 20V | 24A (Tc) | 50 mOhm @ 12A, 4.5V | 1V @ 250µA | 35nC @ 5V | 1590pF @ 10V | 60W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK |
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IPD65R380E6 |
Infineon Technologies |
MOSFET N-CH 650V 10.6A TO252 |
Tape & Reel (TR) | CoolMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 650V | 10.6A | 380 mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | 710pF @ 100V | 83W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 |
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NDB6020P |
Fairchild Semiconductor |
MOSFET P-CH 20V 24A D2PAK |
Digi-Reel® | - | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 20V | 24A (Tc) | 50 mOhm @ 12A, 4.5V | 1V @ 250µA | 35nC @ 5V | 1590pF @ 10V | 60W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK |
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IPD65R380E6 |
Infineon Technologies |
MOSFET N-CH 650V 10.6A TO252 |
Cut Tape (CT) | CoolMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 650V | 10.6A | 380 mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | 710pF @ 100V | 83W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 |
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IRLR3110ZTRPBF |
International Rectifier |
MOSFET N-CH 100V 42A DPAK |
Tape & Reel (TR) | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 100V | 42A | 14 mOhm @ 38A, 10V | 2.5V @ 100µA | 48nC @ 4.5V | 3980pF @ 25V | 140W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak |
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IPD65R380E6 |
Infineon Technologies |
MOSFET N-CH 650V 10.6A TO252 |
Digi-Reel® | CoolMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 650V | 10.6A | 380 mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | 710pF @ 100V | 83W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 |
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IRLR3110ZTRPBF |
International Rectifier |
MOSFET N-CH 100V 42A DPAK |
Cut Tape (CT) | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 100V | 42A | 14 mOhm @ 38A, 10V | 2.5V @ 100µA | 48nC @ 4.5V | 3980pF @ 25V | 140W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak |
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IRF7204PBF |
International Rectifier |
MOSFET P-CH 20V 5.3A 8-SOIC |
Tube | HEXFET® | MOSFET P-Channel, Metal Oxide | Standard | 20V | 5.3A (Ta) | 60 mOhm @ 5.3A, 10V | 2.5V @ 250µA | 25nC @ 10V | 860pF @ 10V | 2.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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IRLR3110ZTRPBF |
International Rectifier |
MOSFET N-CH 100V 42A DPAK |
Digi-Reel® | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 100V | 42A | 14 mOhm @ 38A, 10V | 2.5V @ 100µA | 48nC @ 4.5V | 3980pF @ 25V | 140W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak |
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IRLR8726PBF |
International Rectifier |
MOSFET N-CH 30V 86A DPAK |
Tube | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 86A (Tc) | 5.8 mOhm @ 25A, 10V | 2.35V @ 50µA | 23nC @ 4.5V | 2150pF @ 15V | 75W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak |
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SI7846DP-T1-E3 |
Vishay Siliconix |
MOSFET N-CH 150V 4A PPAK 8SOIC |
Tape & Reel (TR) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Standard | 150V | 4A (Ta), 24.5A (Tc) | 50 mOhm @ 5A, 10V | 4.5V @ 250µA | 36nC @ 10V | - | 1.9W | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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IRF1010NSTRLPBF |
International Rectifier |
MOSFET N-CH 55V 85A D2PAK |
Tape & Reel (TR) | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 55V | 85A (Tc) | 11 mOhm @ 43A, 10V | 4V @ 250µA | 120nC @ 10V | 3210pF @ 25V | 180W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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SI7846DP-T1-E3 |
Vishay Siliconix |
MOSFET N-CH 150V 4A PPAK 8SOIC |
Cut Tape (CT) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Standard | 150V | 4A (Ta), 24.5A (Tc) | 50 mOhm @ 5A, 10V | 4.5V @ 250µA | 36nC @ 10V | - | 1.9W | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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IRF1010NSTRLPBF |
International Rectifier |
MOSFET N-CH 55V 85A D2PAK |
Cut Tape (CT) | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 55V | 85A (Tc) | 11 mOhm @ 43A, 10V | 4V @ 250µA | 120nC @ 10V | 3210pF @ 25V | 180W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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SI7846DP-T1-E3 |
Vishay Siliconix |
MOSFET N-CH 150V 4A PPAK 8SOIC |
Digi-Reel® | TrenchFET® | MOSFET N-Channel, Metal Oxide | Standard | 150V | 4A (Ta), 24.5A (Tc) | 50 mOhm @ 5A, 10V | 4.5V @ 250µA | 36nC @ 10V | - | 1.9W | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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IRF1010NSTRLPBF |
International Rectifier |
MOSFET N-CH 55V 85A D2PAK |
Digi-Reel® | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 55V | 85A (Tc) | 11 mOhm @ 43A, 10V | 4V @ 250µA | 120nC @ 10V | 3210pF @ 25V | 180W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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PSMN1R5-30YL,115 |
NXP Semiconductors |
MOSFET N-CH 30V LFPAK |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 100A (Tc) | 1.5 mOhm @ 15A, 10V | 2.15V @ 1mA | 77.9nC @ 10V | 5057pF @ 12V | 109W | Surface Mount | SC-100, SOT-669, 4-LFPAK | LFPAK56, Power-SO8 |
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PSMN1R5-30YL,115 |
NXP Semiconductors |
MOSFET N-CH 30V LFPAK |
Cut Tape (CT) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 100A (Tc) | 1.5 mOhm @ 15A, 10V | 2.15V @ 1mA | 77.9nC @ 10V | 5057pF @ 12V | 109W | Surface Mount | SC-100, SOT-669, 4-LFPAK | LFPAK56, Power-SO8 |
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SUM50N06-16L-E3 |
Vishay Siliconix |
MOSFET N-CH 60V 50A D2PAK |
Tape & Reel (TR) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 60V | 50A (Tc) | 16 mOhm @ 20A, 10V | 3V @ 250µA | 40nC @ 10V | 1325pF @ 25V | 3.7W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) |
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SUM50N06-16L-E3 |
Vishay Siliconix |
MOSFET N-CH 60V 50A D2PAK |
Cut Tape (CT) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 60V | 50A (Tc) | 16 mOhm @ 20A, 10V | 3V @ 250µA | 40nC @ 10V | 1325pF @ 25V | 3.7W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) |
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PSMN1R5-30YL,115 |
NXP Semiconductors |
MOSFET N-CH 30V LFPAK |
Digi-Reel® | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 100A (Tc) | 1.5 mOhm @ 15A, 10V | 2.15V @ 1mA | 77.9nC @ 10V | 5057pF @ 12V | 109W | Surface Mount | SC-100, SOT-669, 4-LFPAK | LFPAK56, Power-SO8 |
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SUM50N06-16L-E3 |
Vishay Siliconix |
MOSFET N-CH 60V 50A D2PAK |
Digi-Reel® | TrenchFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 60V | 50A (Tc) | 16 mOhm @ 20A, 10V | 3V @ 250µA | 40nC @ 10V | 1325pF @ 25V | 3.7W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) |
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IRFZ34NSTRLPBF |
International Rectifier |
MOSFET N-CH 55V 29A D2PAK |
Tape & Reel (TR) | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 55V | 29A (Tc) | 40 mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | 3.8W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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IRFZ34NSTRLPBF |
International Rectifier |
MOSFET N-CH 55V 29A D2PAK |
Cut Tape (CT) | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 55V | 29A (Tc) | 40 mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | 3.8W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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FDMC2514SDC |
Fairchild Semiconductor |
MOSFET N-CH 25V 40A POWER33 |
Tape & Reel (TR) | Dual Cool™, PowerTrench®, SyncFET™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 25V | 24A (Ta), 40A (Tc) | 3.5 mOhm @ 22.5A, 10V | 3V @ 1mA | 44nC @ 10V | 2705pF @ 13V | 3W | Surface Mount | 8-PowerVDFN | 8-PQFN (3.3x3.3), Dual Cool 33 |
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FDMC2514SDC |
Fairchild Semiconductor |
MOSFET N-CH 25V 40A POWER33 |
Cut Tape (CT) | Dual Cool™, PowerTrench®, SyncFET™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 25V | 24A (Ta), 40A (Tc) | 3.5 mOhm @ 22.5A, 10V | 3V @ 1mA | 44nC @ 10V | 2705pF @ 13V | 3W | Surface Mount | 8-PowerVDFN | 8-PQFN (3.3x3.3), Dual Cool 33 |
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IRFZ34NSTRLPBF |
International Rectifier |
MOSFET N-CH 55V 29A D2PAK |
Digi-Reel® | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 55V | 29A (Tc) | 40 mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | 3.8W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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FDMC2514SDC |
Fairchild Semiconductor |
MOSFET N-CH 25V 40A POWER33 |
Digi-Reel® | Dual Cool™, PowerTrench®, SyncFET™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 25V | 24A (Ta), 40A (Tc) | 3.5 mOhm @ 22.5A, 10V | 3V @ 1mA | 44nC @ 10V | 2705pF @ 13V | 3W | Surface Mount | 8-PowerVDFN | 8-PQFN (3.3x3.3), Dual Cool 33 |
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IRFS3607TRLPBF |
International Rectifier |
MOSFET N-CH 75V 80A D2PAK |
Tape & Reel (TR) | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 75V | 80A (Tc) | 9 mOhm @ 46A, 10V | 4V @ 100µA | 84nC @ 10V | 3070pF @ 50V | 140W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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FDS6670AS |
Fairchild Semiconductor |
MOSFET N-CH 30V 13.5A 8SOIC |
Tape & Reel (TR) | PowerTrench®, SyncFET™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 13.5A | 9 mOhm @ 13.5A, 10V | 3V @ 1mA | 38nC @ 10V | 1540pF @ 15V | 1W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC N |
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IRFS3607TRLPBF |
International Rectifier |
MOSFET N-CH 75V 80A D2PAK |
Cut Tape (CT) | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 75V | 80A (Tc) | 9 mOhm @ 46A, 10V | 4V @ 100µA | 84nC @ 10V | 3070pF @ 50V | 140W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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IRFS3607TRLPBF |
International Rectifier |
MOSFET N-CH 75V 80A D2PAK |
Digi-Reel® | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 75V | 80A (Tc) | 9 mOhm @ 46A, 10V | 4V @ 100µA | 84nC @ 10V | 3070pF @ 50V | 140W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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FDS6670AS |
Fairchild Semiconductor |
MOSFET N-CH 30V 13.5A 8SOIC |
Cut Tape (CT) | PowerTrench®, SyncFET™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 13.5A | 9 mOhm @ 13.5A, 10V | 3V @ 1mA | 38nC @ 10V | 1540pF @ 15V | 1W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC N |
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TPH4R606NH,L1Q |
Toshiba Semiconductor and Storage |
MOSFET N CH 60V 32A 8-SOP ADV |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 60V | 32A (Ta) | 4.6 mOhm @ 16A, 10V | 4V @ 500µA | 49nC @ 10V | 3965pF @ 30V | 63W | Surface Mount | 8-PowerVDFN | 8-SOP Advance |
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FDS6670AS |
Fairchild Semiconductor |
MOSFET N-CH 30V 13.5A 8SOIC |
Digi-Reel® | PowerTrench®, SyncFET™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 13.5A | 9 mOhm @ 13.5A, 10V | 3V @ 1mA | 38nC @ 10V | 1540pF @ 15V | 1W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC N |
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TPH4R606NH,L1Q |
Toshiba Semiconductor and Storage |
MOSFET N CH 60V 32A 8-SOP ADV |
Cut Tape (CT) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 60V | 32A (Ta) | 4.6 mOhm @ 16A, 10V | 4V @ 500µA | 49nC @ 10V | 3965pF @ 30V | 63W | Surface Mount | 8-PowerVDFN | 8-SOP Advance |
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IRLL3303PBF |
International Rectifier |
MOSFET N-CH 30V 4.6A SOT223 |
Tube | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 4.6A (Ta) | 31 mOhm @ 4.6A, 10V | 1V @ 250µA | 50nC @ 10V | 840pF @ 25V | 1W | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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TPH4R606NH,L1Q |
Toshiba Semiconductor and Storage |
MOSFET N CH 60V 32A 8-SOP ADV |
Digi-Reel® | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 60V | 32A (Ta) | 4.6 mOhm @ 16A, 10V | 4V @ 500µA | 49nC @ 10V | 3965pF @ 30V | 63W | Surface Mount | 8-PowerVDFN | 8-SOP Advance |
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IRF1010ESTRLPBF |
International Rectifier |
MOSFET N-CH 60V 84A D2PAK |
Tape & Reel (TR) | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 60V | 84A (Tc) | 12 mOhm @ 50A, 10V | 4V @ 250µA | 130nC @ 10V | 3210pF @ 25V | 200W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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IRF1010ESTRLPBF |
International Rectifier |
MOSFET N-CH 60V 84A D2PAK |
Cut Tape (CT) | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 60V | 84A (Tc) | 12 mOhm @ 50A, 10V | 4V @ 250µA | 130nC @ 10V | 3210pF @ 25V | 200W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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RFD3055LE |
Fairchild Semiconductor |
MOSFET N-CH 60V 11A I-PAK |
Tube | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 60V | 11A (Tc) | 107 mOhm @ 8A, 5V | 3V @ 250µA | 11.3nC @ 10V | 350pF @ 25V | 38W | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-Pak |
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IRF1010ESTRLPBF |
International Rectifier |
MOSFET N-CH 60V 84A D2PAK |
Digi-Reel® | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 60V | 84A (Tc) | 12 mOhm @ 50A, 10V | 4V @ 250µA | 130nC @ 10V | 3210pF @ 25V | 200W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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BUK9612-55B,118 |
NXP Semiconductors |
MOSFET N-CH 55V 75A D2PAK |
Tape & Reel (TR) | TrenchMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 55V | 75A (Tc) | 10 mOhm @ 25A, 10V | 2V @ 1mA | 31nC @ 5V | 3693pF @ 25V | 157W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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FDMC7572S |
Fairchild Semiconductor |
MOSFET N-CH 25V 40A POWER33 |
Tape & Reel (TR) | PowerTrench®, SyncFET™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 25V | 22.5A (Ta), 40A (Tc) | 3.15 mOhm @ 22.5A, 10V | 3V @ 1mA | 44nC @ 10V | 2705pF @ 13V | 2.3W | Surface Mount | 8-MLP, Power33 | Power33 |
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BUK9612-55B,118 |
NXP Semiconductors |
MOSFET N-CH 55V 75A D2PAK |
Cut Tape (CT) | TrenchMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 55V | 75A (Tc) | 10 mOhm @ 25A, 10V | 2V @ 1mA | 31nC @ 5V | 3693pF @ 25V | 157W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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FDMC7572S |
Fairchild Semiconductor |
MOSFET N-CH 25V 40A POWER33 |
Cut Tape (CT) | PowerTrench®, SyncFET™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 25V | 22.5A (Ta), 40A (Tc) | 3.15 mOhm @ 22.5A, 10V | 3V @ 1mA | 44nC @ 10V | 2705pF @ 13V | 2.3W | Surface Mount | 8-MLP, Power33 | Power33 |
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BUK9612-55B,118 |
NXP Semiconductors |
MOSFET N-CH 55V 75A D2PAK |
Digi-Reel® | TrenchMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 55V | 75A (Tc) | 10 mOhm @ 25A, 10V | 2V @ 1mA | 31nC @ 5V | 3693pF @ 25V | 157W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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FDMC7572S |
Fairchild Semiconductor |
MOSFET N-CH 25V 40A POWER33 |
Digi-Reel® | PowerTrench®, SyncFET™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 25V | 22.5A (Ta), 40A (Tc) | 3.15 mOhm @ 22.5A, 10V | 3V @ 1mA | 44nC @ 10V | 2705pF @ 13V | 2.3W | Surface Mount | 8-MLP, Power33 | Power33 |
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SI7115DN-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH 150V 8.9A 1212-8 |
Tape & Reel (TR) | - | MOSFET P-Channel, Metal Oxide | Standard | 150V | 2.3A (Ta), 8.9A (Tc) | 295 mOhm @ 4A, 10V | 4V @ 250µA | 42nC @ 10V | 1190pF @ 50V | 52W | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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STB40NF10LT4 |
STMicroelectronics |
MOSFET N-CH 100V 40A D2PAK |
Tape & Reel (TR) | STripFET™ II | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 100V | 40A (Tc) | 33 mOhm @ 20A, 10V | 2.5V @ 250µA | 64nC @ 4.5V | 2300pF @ 25V | 150W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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SI7115DN-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH 150V 8.9A 1212-8 |
Cut Tape (CT) | - | MOSFET P-Channel, Metal Oxide | Standard | 150V | 2.3A (Ta), 8.9A (Tc) | 295 mOhm @ 4A, 10V | 4V @ 250µA | 42nC @ 10V | 1190pF @ 50V | 52W | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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STB40NF10LT4 |
STMicroelectronics |
MOSFET N-CH 100V 40A D2PAK |
Cut Tape (CT) | STripFET™ II | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 100V | 40A (Tc) | 33 mOhm @ 20A, 10V | 2.5V @ 250µA | 64nC @ 4.5V | 2300pF @ 25V | 150W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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STB40NF10LT4 |
STMicroelectronics |
MOSFET N-CH 100V 40A D2PAK |
Digi-Reel® | STripFET™ II | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 100V | 40A (Tc) | 33 mOhm @ 20A, 10V | 2.5V @ 250µA | 64nC @ 4.5V | 2300pF @ 25V | 150W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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SI7115DN-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH 150V 8.9A 1212-8 |
Digi-Reel® | - | MOSFET P-Channel, Metal Oxide | Standard | 150V | 2.3A (Ta), 8.9A (Tc) | 295 mOhm @ 4A, 10V | 4V @ 250µA | 42nC @ 10V | 1190pF @ 50V | 52W | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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PHB45NQ15T,118 |
NXP Semiconductors |
MOSFET N-CH 150V 45.1A D2PAK |
Tape & Reel (TR) | TrenchMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 150V | 45.1A (Tc) | 42 mOhm @ 20A, 10V | 4V @ 1mA | 32nC @ 10V | 1770pF @ 25V | 230W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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PHB45NQ15T,118 |
NXP Semiconductors |
MOSFET N-CH 150V 45.1A D2PAK |
Cut Tape (CT) | TrenchMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 150V | 45.1A (Tc) | 42 mOhm @ 20A, 10V | 4V @ 1mA | 32nC @ 10V | 1770pF @ 25V | 230W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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IRF520NSTRLPBF |
International Rectifier |
MOSFET N-CH 100V 9.7A D2PAK |
Tape & Reel (TR) | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 100V | 9.7A (Tc) | 200 mOhm @ 5.7A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 3.8W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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PHB45NQ15T,118 |
NXP Semiconductors |
MOSFET N-CH 150V 45.1A D2PAK |
Digi-Reel® | TrenchMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 150V | 45.1A (Tc) | 42 mOhm @ 20A, 10V | 4V @ 1mA | 32nC @ 10V | 1770pF @ 25V | 230W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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IRF520NSTRLPBF |
International Rectifier |
MOSFET N-CH 100V 9.7A D2PAK |
Cut Tape (CT) | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 100V | 9.7A (Tc) | 200 mOhm @ 5.7A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 3.8W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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IRF520NSTRLPBF |
International Rectifier |
MOSFET N-CH 100V 9.7A D2PAK |
Digi-Reel® | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 100V | 9.7A (Tc) | 200 mOhm @ 5.7A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 3.8W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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IPL60R385CP |
Infineon Technologies |
MOSFET N-CH 600V 9.0A 4VSON |
Tape & Reel (TR) | CoolMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 600V | 9A (Tc) | 385 mOhm @ 5.2A, 10V | 3.5V @ 340µA | 17nC @ 10V | 790pF @ 100V | 83W | Surface Mount | 4-TSFN Exposed Pad | PG-VSON-4 |
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IPL60R385CP |
Infineon Technologies |
MOSFET N-CH 600V 9.0A 4VSON |
Cut Tape (CT) | CoolMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 600V | 9A (Tc) | 385 mOhm @ 5.2A, 10V | 3.5V @ 340µA | 17nC @ 10V | 790pF @ 100V | 83W | Surface Mount | 4-TSFN Exposed Pad | PG-VSON-4 |
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FDS86141 |
Fairchild Semiconductor |
MOSFET N-CH 100V 7A 8-SOIC |
Tape & Reel (TR) | PowerTrench® | MOSFET N-Channel, Metal Oxide | Standard | 100V | 7A (Ta) | 23 mOhm @ 7A, 10V | 4V @ 250µA | 16.5nC @ 10V | 934pF @ 50V | 2.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC N |
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IPL60R385CP |
Infineon Technologies |
MOSFET N-CH 600V 9.0A 4VSON |
Digi-Reel® | CoolMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 600V | 9A (Tc) | 385 mOhm @ 5.2A, 10V | 3.5V @ 340µA | 17nC @ 10V | 790pF @ 100V | 83W | Surface Mount | 4-TSFN Exposed Pad | PG-VSON-4 |
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FDS86141 |
Fairchild Semiconductor |
MOSFET N-CH 100V 7A 8-SOIC |
Cut Tape (CT) | PowerTrench® | MOSFET N-Channel, Metal Oxide | Standard | 100V | 7A (Ta) | 23 mOhm @ 7A, 10V | 4V @ 250µA | 16.5nC @ 10V | 934pF @ 50V | 2.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC N |
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IPB054N08N3 G |
Infineon Technologies |
MOSFET N-CH 80V 80A TO263-3 |
Tape & Reel (TR) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 80V | 80A | 5.4 mOhm @ 80A, 10V | 3.5V @ 90µA | 69nC @ 10V | 4750pF @ 40V | 150W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 |
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FDS86141 |
Fairchild Semiconductor |
MOSFET N-CH 100V 7A 8-SOIC |
Digi-Reel® | PowerTrench® | MOSFET N-Channel, Metal Oxide | Standard | 100V | 7A (Ta) | 23 mOhm @ 7A, 10V | 4V @ 250µA | 16.5nC @ 10V | 934pF @ 50V | 2.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC N |
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IPB054N08N3 G |
Infineon Technologies |
MOSFET N-CH 80V 80A TO263-3 |
Cut Tape (CT) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 80V | 80A | 5.4 mOhm @ 80A, 10V | 3.5V @ 90µA | 69nC @ 10V | 4750pF @ 40V | 150W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 |
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FDMS8027S |
Fairchild Semiconductor |
MOSFET N-CH 30V POWER56 |
Tape & Reel (TR) | PowerTrench®, SyncFET™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 18A (Ta), 22A (Tc) | 5 mOhm @ 18A, 10V | 3V @ 1mA | 31nC @ 10V | 1815pF @ 15V | 2.5W | Surface Mount | 8-PQFN, Power56 | Power56 |
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IPB054N08N3 G |
Infineon Technologies |
MOSFET N-CH 80V 80A TO263-3 |
Digi-Reel® | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 80V | 80A | 5.4 mOhm @ 80A, 10V | 3.5V @ 90µA | 69nC @ 10V | 4750pF @ 40V | 150W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 |
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FDMS8027S |
Fairchild Semiconductor |
MOSFET N-CH 30V POWER56 |
Cut Tape (CT) | PowerTrench®, SyncFET™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 18A (Ta), 22A (Tc) | 5 mOhm @ 18A, 10V | 3V @ 1mA | 31nC @ 10V | 1815pF @ 15V | 2.5W | Surface Mount | 8-PQFN, Power56 | Power56 |
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IRFL4315PBF |
International Rectifier |
MOSFET N-CH 150V 2.6A SOT223 |
Tube | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 150V | 2.6A (Ta) | 185 mOhm @ 1.6A, 10V | 5V @ 250µA | 19nC @ 10V | 420pF @ 25V | 2.8W | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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FDMS8027S |
Fairchild Semiconductor |
MOSFET N-CH 30V POWER56 |
Digi-Reel® | PowerTrench®, SyncFET™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 18A (Ta), 22A (Tc) | 5 mOhm @ 18A, 10V | 3V @ 1mA | 31nC @ 10V | 1815pF @ 15V | 2.5W | Surface Mount | 8-PQFN, Power56 | Power56 |
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BSB012N03LX3 G |
Infineon Technologies |
MOSFET N-CH 30V 180A 2WDSON |
Tape & Reel (TR) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 39A | 1.2 mOhm @ 30A, 10V | 2.2V @ 250µA | 169nC @ 10V | 16900pF @ 15V | 2.8W | Surface Mount | 3-WDSON | MG-WDSON-2, CanPAK M™ |
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SIR158DP-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH D-S 30V 8-SOIC |
Tape & Reel (TR) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Standard | 30V | 60A (Tc) | 1.8 mOhm @ 20A, 10V | 2.5V @ 250µA | 130nC @ 10V | 4980pF @ 15V | 83W | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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BSB012N03LX3 G |
Infineon Technologies |
MOSFET N-CH 30V 180A 2WDSON |
Cut Tape (CT) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 39A | 1.2 mOhm @ 30A, 10V | 2.2V @ 250µA | 169nC @ 10V | 16900pF @ 15V | 2.8W | Surface Mount | 3-WDSON | MG-WDSON-2, CanPAK M™ |
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SIR158DP-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH D-S 30V 8-SOIC |
Cut Tape (CT) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Standard | 30V | 60A (Tc) | 1.8 mOhm @ 20A, 10V | 2.5V @ 250µA | 130nC @ 10V | 4980pF @ 15V | 83W | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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BSB012N03LX3 G |
Infineon Technologies |
MOSFET N-CH 30V 180A 2WDSON |
Digi-Reel® | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 39A | 1.2 mOhm @ 30A, 10V | 2.2V @ 250µA | 169nC @ 10V | 16900pF @ 15V | 2.8W | Surface Mount | 3-WDSON | MG-WDSON-2, CanPAK M™ |
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IRFU320PBF |
Vishay Siliconix |
MOSFET N-CH 400V 3.1A I-PAK |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 400V | 3.1A (Tc) | 1.8 Ohm @ 1.9A, 10V | 4V @ 250µA | 20nC @ 10V | 350pF @ 25V | 2.5W | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA |
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SIR158DP-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH D-S 30V 8-SOIC |
Digi-Reel® | TrenchFET® | MOSFET N-Channel, Metal Oxide | Standard | 30V | 60A (Tc) | 1.8 mOhm @ 20A, 10V | 2.5V @ 250µA | 130nC @ 10V | 4980pF @ 15V | 83W | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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PSMN017-80PS,127 |
NXP Semiconductors |
MOSFET N-CH 80V TO220AB |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 80V | 50A | 17 mOhm @ 10A, 10V | 4V @ 1mA | 26nC @ 10V | 1573pF @ 40V | 103W | Through Hole | TO-220-3 | TO-220AB |