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Part Number |
Manufacturer |
Description |
Packaging | Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case | Supplier Device Package |
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2SK2995(F) |
Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 30A TO-3PN |
Tube | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 250V | 30A (Ta) | 68 mOhm @ 15A, 10V | 3.5V @ 1mA | 132nC @ 10V | 5400pF @ 10V | 90W | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N)IS |
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STP8NK80ZFP |
STMicroelectronics |
MOSFET N-CH 800V 6.2A TO-220FP |
Tube | SuperMESH™ | MOSFET N-Channel, Metal Oxide | Standard | 800V | 6.2A (Tc) | 1.5 Ohm @ 3.1A, 10V | 4.5V @ 100µA | 46nC @ 10V | 1320pF @ 25V | 30W | Through Hole | TO-220-3 Full Pack | TO-220FP |
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IXTV102N20T |
IXYS |
MOSFET N-CH 200V 102A PLUS220 |
Tube | TrenchHV™ | MOSFET N-Channel, Metal Oxide | Standard | 200V | 102A (Tc) | 23 mOhm @ 500mA, 10V | 4.5V @ 1mA | 114nC @ 10V | 6800pF @ 25V | 750W | Through Hole | TO-220-3, Short Tab | PLUS220 |
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IRF640LPBF |
Vishay Siliconix |
MOSFET N-CH 200V 18A TO-262 |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 200V | 18A (Tc) | 180 mOhm @ 11A, 10V | 4V @ 250µA | 70nC @ 10V | 1300pF @ 25V | 130W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 |
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IXTV102N25T |
IXYS |
MOSFET N-CH 250V 102A PLUS220 |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 250V | 102A (Tc) | - | - | - | - | - | Through Hole | TO-220-3, Short Tab | PLUS220 |
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AOTF20S60L |
Alpha & Omega Semiconductor Inc |
MOSFET N-CH 600V 20A TO220F |
Tube | aMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 600V | 20A (Tc) | 199 mOhm @ 10A, 10V | 4.1V @ 250µA | 19.8nC @ 10V | 1038pF @ 100V | 37.8W | Through Hole | TO-220-3 Full Pack | TO-220F |
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IXTV130N15T |
IXYS |
MOSFET N-CH 150V 130A PLUS220 |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 150V | 130A (Tc) | - | - | - | - | - | Through Hole | TO-220-3, Short Tab | PLUS220 |
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TK12Q60W,S1VQ |
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 11.5A IPAK |
Tube | - | MOSFET N-Channel, Metal Oxide | Super Junction | 600V | 11.5A (Ta) | 340 mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | 890pF @ 300V | 100W | Through Hole | TO-251-3 Stub Leads, IPak | I-Pak |
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IXTV72N30T |
IXYS |
MOSFET N-CH 300V 72A PLUS220 |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 300V | 72A (Tc) | - | - | - | - | - | Through Hole | TO-220-3, Short Tab | PLUS220 |
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BUK7506-75B,127 |
NXP Semiconductors |
MOSFET N-CH 75V 75A TO220AB |
Tube | TrenchMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 75V | 75A | 5.6 mOhm @ 25A, 10V | 4V @ 1mA | 91nC @ 10V | 7446pF @ 25V | 300W | Through Hole | TO-220-3 | TO-220AB |
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IXFA6N120P |
IXYS |
MOSFET N-CH 1200V 6A D2PAK |
Tube | Polar™ HiPerFET™ | MOSFET N-Channel, Metal Oxide | Standard | 1200V (1.2kV) | 6A (Tc) | 2.4 Ohm @ 500mA, 10V | 5V @ 1mA | 92nC @ 10V | 2830pF @ 25V | 250W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXFA) |
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IPI600N25N3 G |
Infineon Technologies |
MOSFET N-CH 250V 25A TO262-3 |
Tube | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 250V | 25A (Tc) | 60 mOhm @ 25A, 10V | 4V @ 90µA | 29nC @ 10V | 2350pF @ 100V | 136W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 |
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IXTT50P085 |
IXYS |
MOSFET P-CH 85V 50A TO-268 |
Tube | - | MOSFET P-Channel, Metal Oxide | Standard | 85V | 50A (Tc) | 55 mOhm @ 25A, 10V | 5V @ 250µA | 150nC @ 10V | 4200pF @ 25V | 300W | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 |
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TK14C65W,S1Q |
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A I2PAK |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 650V | 13.7A (Ta) | 250 mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | 1300pF @ 300V | 130W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK |
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2SK3936(Q) |
Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 23A TO-3PN |
Bulk | - | MOSFET N-Channel, Metal Oxide | Standard | 500V | 23A (Ta) | 250 mOhm @ 11.5A, 10V | 4V @ 1mA | 60nC @ 10V | 4250pF @ 25V | 150W | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) |
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BUK7510-100B,127 |
NXP Semiconductors |
MOSFET N-CH 100V 75A TO220AB |
Tube | TrenchMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 100V | 75A | 10 mOhm @ 25A, 10V | 4V @ 1mA | 80nC @ 10V | 6773pF @ 25V | 300W | Through Hole | TO-220-3 | TO-220AB |
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IXTQ96N15P |
IXYS |
MOSFET N-CH 150V 96A TO-3P |
Tube | PolarHT™ | MOSFET N-Channel, Metal Oxide | Standard | 150V | 96A (Tc) | 24 mOhm @ 500mA, 10V | 5V @ 250µA | 110nC @ 10V | 3500pF @ 25V | 480W | Through Hole | TO-3P-3, SC-65-3 | TO-3P |
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IRF4104PBF |
International Rectifier |
MOSFET N-CH 40V 75A TO-220AB |
Tube | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 40V | 75A (Tc) | 5.5 mOhm @ 75A, 10V | 4V @ 250µA | 100nC @ 10V | 3000pF @ 25V | 140W | Through Hole | TO-220-3 | TO-220AB |
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IXTT26N50P |
IXYS |
MOSFET N-CH 500V 26A TO-268 |
Tube | PolarHV™ | MOSFET N-Channel, Metal Oxide | Standard | 500V | 26A (Tc) | 230 mOhm @ 13A, 10V | 5.5V @ 250µA | 65nC @ 10V | 3600pF @ 25V | 400W | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 |
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SPA16N50C3 |
Infineon Technologies |
MOSFET N-CH 560V 16A TO220FP |
Tube | CoolMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 560V | 16A (Tc) | 280 mOhm @ 10A, 10V | 3.9V @ 675µA | 66nC @ 10V | 1600pF @ 25V | 34W | Through Hole | TO-220-3 Full Pack | PG-TO220-3 |
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IXFH12N100P |
IXYS |
MOSFET N-CH 1000V 12A TO-247 |
Tube | Polar™ HiPerFET™ | MOSFET N-Channel, Metal Oxide | Standard | 1000V (1kV) | 12A (Tc) | 1.05 Ohm @ 6A, 10V | 5V @ 1mA | 80nC @ 10V | 4080pF @ 25V | 463W | Through Hole | TO-247-3 | TO-247AD (IXFH) |
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TK14E65W,S1X |
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A TO-220 |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 650V | 13.7A (Ta) | 250 mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | 1300pF @ 300V | 130W | Through Hole | TO-220-3 | TO-220-3 |
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IXTQ30N50P |
IXYS |
MOSFET N-CH 500V 30A TO-3P |
Tube | PolarHV™ | MOSFET N-Channel, Metal Oxide | Standard | 500V | 30A (Tc) | 200 mOhm @ 15A, 10V | 5V @ 250µA | 70nC @ 10V | 4150pF @ 25V | 460W | Through Hole | TO-3P-3, SC-65-3 | TO-3P |
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IRFBC30APBF |
Vishay Siliconix |
MOSFET N-CH 600V 3.6A TO-220AB |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 600V | 3.6A (Tc) | 2.2 Ohm @ 2.2A, 10V | 4.5V @ 250µA | 23nC @ 10V | 510pF @ 25V | 74W | Through Hole | TO-220-3 | TO-220AB |
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IXTQ26N60P |
IXYS |
MOSFET N-CH 600V 26A TO-3P |
Tube | PolarHV™ | MOSFET N-Channel, Metal Oxide | Standard | 600V | 26A (Tc) | 270 mOhm @ 500mA, 10V | 5V @ 250µA | 72nC @ 10V | 4150pF @ 25V | 460W | Through Hole | TO-3P-3, SC-65-3 | TO-3P |
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IPA50R250CP |
Infineon Technologies |
MOSFET N-CH 550V 13A TO220-3 |
Tube | CoolMOS™ | MOSFET N-Channel, Metal Oxide | Super Junction | 500V | 13A (Tc) | 250 mOhm @ 7.8A, 10V | 3.5V @ 520µA | 36nC @ 10V | 1420pF @ 100V | 33W | Through Hole | TO-220-3 Full Pack | PG-TO220-FP |
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IXTT110N10P |
IXYS |
MOSFET N-CH 100V 110A TO-268 |
Tube | PolarHT™ | MOSFET N-Channel, Metal Oxide | Standard | 100V | 110A (Tc) | 15 mOhm @ 500mA, 10V | 5V @ 250µA | 110nC @ 10V | 3550pF @ 25V | 480W | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 |
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PSMN5R6-100XS,127 |
NXP Semiconductors |
MOSFET N-CH 100V 61.8A TO220F |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 100V | 61.8A (Tmb) | 5.6 mOhm @ 15A, 10V | 4V @ 1mA | 145nC @ 10V | 8061pF @ 50V | 60W | Through Hole | TO-220-3 Isolated Tab | TO-220F |
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IXFV16N80P |
IXYS |
MOSFET N-CH 800V 16A PLUS220 |
Tube | PolarHV™ HiPerFET™ | MOSFET N-Channel, Metal Oxide | Standard | 800V | 16A (Tc) | 600 mOhm @ 500mA, 10V | 5V @ 4mA | 71nC @ 10V | 4600pF @ 25V | 460W | Through Hole | TO-220-3, Short Tab | PLUS220 |
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TK16A60W,S4VX |
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A TO-220SIS |
Tube | - | MOSFET N-Channel, Metal Oxide | Super Junction | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 40W | Through Hole | TO-220-3 Full Pack | TO-220SIS |
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IXFT14N80P |
IXYS |
MOSFET N-CH 800V 14A TO-268 |
Tube | PolarHV™ HiPerFET™ | MOSFET N-Channel, Metal Oxide | Standard | 800V | 14A (Tc) | 720 mOhm @ 500mA, 10V | 5.5V @ 4mA | 61nC @ 10V | 3900pF @ 25V | 400W | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 |
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STP9NK70ZFP |
STMicroelectronics |
MOSFET N-CH 700V 7.5A TO-220FP |
Tube | SuperMESH™ | MOSFET N-Channel, Metal Oxide | Standard | 700V | 7.5A (Tc) | 1.2 Ohm @ 4A, 10V | 4.5V @ 100µA | 68nC @ 10V | 1370pF @ 25V | 35W | Through Hole | TO-220-3 Full Pack | TO-220FP |
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AOK53S60L |
Alpha & Omega Semiconductor Inc |
MOSFET N-CH 600V 53A TO247 |
Tube | aMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 600V | 53A (Tc) | 70 mOhm @ 26.5A, 10V | 3.8V @ 250µA | 59nC @ 10V | 3034pF @ 100V | 520W | Through Hole | TO-247-3 | TO-247 |
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STP6NK90ZFP |
STMicroelectronics |
MOSFET N-CH 900V 5.8A TO-220FP |
Tube | SuperMESH™ | MOSFET N-Channel, Metal Oxide | Standard | 900V | 5.8A (Tc) | 2 Ohm @ 2.9A, 10V | 4.5V @ 100µA | 60.5nC @ 10V | 1350pF @ 25V | 30W | Through Hole | TO-220-3 Full Pack | TO-220FP |
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IXFH230N10T |
IXYS |
MOSFET N-CH 100V 230A TO-247 |
Tube | HiPerFET™ | MOSFET N-Channel, Metal Oxide | Standard | 100V | 230A (Tc) | 4.7 mOhm @ 500mA, 10V | 4.5V @ 1mA | 250nC @ 10V | 15300pF @ 25V | 650W | Through Hole | TO-247-3 | TO-247AD (IXFH) |
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TK14N65W,S1F |
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A TO-220 |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 650V | 13.7A (Ta) | 250 mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | 1300pF @ 300V | 130W | Through Hole | TO-247-3 | TO-247 |
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IXTH3N120 |
IXYS |
MOSFET N-CH 1200V 3A TO-247 |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 1200V (1.2kV) | 3A (Tc) | 4.5 Ohm @ 500mA, 10V | 4.5V @ 250µA | 39nC @ 10V | 1300pF @ 25V | 150W | Through Hole | TO-247-3 | TO-247 (IXTH) |
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STW10NK60Z |
STMicroelectronics |
MOSFET N-CH 600V 10A TO-247 |
Tube | SuperMESH™ | MOSFET N-Channel, Metal Oxide | Standard | 600V | 10A (Tc) | 750 mOhm @ 4.5A, 10V | 4.5V @ 250µA | 70nC @ 10V | 1370pF @ 25V | 156W | Through Hole | TO-247-3 | TO-247-3 |
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IXTH60N15 |
IXYS |
MOSFET N-CH 150V 60A TO-247 |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 150V | 60A (Tc) | 33 mOhm @ 15A, 10V | 4V @ 250µA | 110nC @ 10V | 3000pF @ 25V | 275W | Through Hole | TO-247-3 | TO-247 (IXTH) |
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IRL3803VSPBF |
International Rectifier |
MOSFET N-CH 30V 140A D2PAK |
Tube | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 140A (Tc) | 5.5 mOhm @ 71A, 10V | 1V @ 250µA | 76nC @ 4.5V | 3720pF @ 25V | 3.8W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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IXFV12N90P |
IXYS |
MOSFET N-CH 900V 12A PLUS220 |
Tube | Polar™ HiPerFET™ | MOSFET N-Channel, Metal Oxide | Standard | 900V | 12A (Tc) | 900 mOhm @ 6A, 10V | 6.5V @ 1mA | 56nC @ 10V | 3080pF @ 25V | 380W | Through Hole | TO-220-3, Short Tab | PLUS220 |
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R5009FNX |
Rohm Semiconductor |
MOSFET N-CH 500V 9A TO-220FM |
Bulk | - | MOSFET N-Channel, Metal Oxide | Standard | 500V | 9A (Tc) | 840 mOhm @ 4.5A, 10V | 4V @ 1mA | 18nC @ 10V | 630pF @ 25V | 50W | Through Hole | TO-220-3 Full Pack | TO-220FM |
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IXFV22N60P |
IXYS |
MOSFET N-CH 600V 22A PLUS220 |
Tube | PolarHV™ HiPerFET™ | MOSFET N-Channel, Metal Oxide | Standard | 600V | 22A (Tc) | 350 mOhm @ 11A, 10V | 5.5V @ 4mA | 58nC @ 10V | 3600pF @ 25V | 400W | Through Hole | TO-220-3, Short Tab | PLUS220 |
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IXFR44N50Q |
IXYS |
MOSFET N-CH 500V 34A ISOPLUS247 |
Tube | HiPerFET™ | MOSFET N-Channel, Metal Oxide | Standard | 500V | 34A (Tc) | 120 mOhm @ 22A, 10V | 4V @ 4mA | 190nC @ 10V | 7000pF @ 25V | 310W | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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TK20A60W5,S5VX |
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A TO-220 |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 600V | 20A (Ta) | 175 mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | 1800pF @ 300V | 45W | Through Hole | TO-220-3 Full Pack | TO-220SIS |
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IRF1404ZSPBF |
International Rectifier |
MOSFET N-CH 40V 75A D2PAK |
Tube | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 40V | 120A (Tc) | 3.7 mOhm @ 75A, 10V | 4V @ 150µA | 150nC @ 10V | 4340pF @ 25V | 200W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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IXFH160N15T2 |
IXYS |
MOSFET N-CH 150V 160A TO-247 |
Tube | TrenchT2™ HiPerFET™ | MOSFET N-Channel, Metal Oxide | Standard | 150V | 160A (Tc) | 9 mOhm @ 80A, 10V | 4.5V @ 1mA | 253nC @ 10V | 15000pF @ 25V | 880W | Through Hole | TO-247-3 | TO-247AD (IXFH) |
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IPP50R199CP |
Infineon Technologies |
MOSFET N-CH 550V 17A TO-220 |
Tube | CoolMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 550V | 17A (Tc) | 199 mOhm @ 9.9A, 10V | 3.5V @ 660µA | 45nC @ 10V | 1800pF @ 100V | 139W | Through Hole | TO-220-3 | PG-TO220-3 |
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IXFT30N50P |
IXYS |
MOSFET N-CH 500V 30A TO-268 D3 |
Tube | PolarHV™ HiPerFET™ | MOSFET N-Channel, Metal Oxide | Standard | 500V | 30A (Tc) | 200 mOhm @ 15A, 10V | 5V @ 4mA | 70nC @ 10V | 4150pF @ 25V | 460W | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 |
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IXFT26N60P |
IXYS |
MOSFET N-CH 600V 26A TO-268 D3 |
Tube | PolarHV™ | MOSFET N-Channel, Metal Oxide | Standard | 600V | 26A (Tc) | 270 mOhm @ 500mA, 10V | 5V @ 4mA | 72nC @ 10V | 4150pF @ 25V | 460W | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 |
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IXFP5N100PM |
IXYS |
MOSFET N-CH 1000V 2.3A TO-220 |
Tube | Polar™ HiPerFET™ | MOSFET N-Channel, Metal Oxide | Standard | 1000V (1kV) | 2.3A | 2.8 Ohm @ 2.5A, 10V | 6V @ 250µA | 33.4nC @ 10V | 1830pF @ 25V | 42W | Through Hole | TO-220-3 Isolated Tab | TO-220 Isolated Tab |
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IXFH110N25T |
IXYS |
MOSFET N-CH 250V 110A TO-247 |
Tube | TrenchHV™ | MOSFET N-Channel, Metal Oxide | Standard | 250V | 110A (Tc) | 24 mOhm @ 55A, 10V | 4.5V @ 3mA | 157nC @ 10V | 9400pF @ 25V | 694W | Through Hole | TO-247-3 | TO-247AD (IXFH) |
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R6008FNX |
Rohm Semiconductor |
MOSFET N-CH 600V 8A TO-220FM |
Bulk | - | MOSFET N-Channel, Metal Oxide | Standard | 600V | 8A (Tc) | 950 mOhm @ 4A, 10V | 4V @ 1mA | 20nC @ 10V | 580pF @ 25V | 50W | Through Hole | TO-220-3 Full Pack | TO-220FM |
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2SK3940(Q) |
Toshiba Semiconductor and Storage |
MOSFET N-CH 75V 70A TO-3PN |
Bulk | - | MOSFET N-Channel, Metal Oxide | Standard | 75V | 70A (Ta) | 7 mOhm @ 35A, 10V | 5V @ 1mA | 200nC @ 10V | 12500pF @ 10V | 150W | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) |
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IRF1405ZSTRLPBF |
International Rectifier |
MOSFET N-CH 55V 75A D2PAK |
Tape & Reel (TR) | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 55V | 75A (Tc) | 4.9 mOhm @ 75A, 10V | 4V @ 250µA | 180nC @ 10V | 4780pF @ 25V | 230W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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IXTH96N20P |
IXYS |
MOSFET N-CH 200V 96A TO-247 |
Tube | PolarHT™ | MOSFET N-Channel, Metal Oxide | Standard | 200V | 96A (Tc) | 24 mOhm @ 500mA, 10V | 5V @ 250µA | 145nC @ 10V | 4800pF @ 25V | 600W | Through Hole | TO-247-3 | TO-247 (IXTH) |
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IRF1405ZSTRLPBF |
International Rectifier |
MOSFET N-CH 55V 75A D2PAK |
Cut Tape (CT) | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 55V | 75A (Tc) | 4.9 mOhm @ 75A, 10V | 4V @ 250µA | 180nC @ 10V | 4780pF @ 25V | 230W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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IRF1405ZSTRLPBF |
International Rectifier |
MOSFET N-CH 55V 75A D2PAK |
Digi-Reel® | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 55V | 75A (Tc) | 4.9 mOhm @ 75A, 10V | 4V @ 250µA | 180nC @ 10V | 4780pF @ 25V | 230W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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IXTT36P10 |
IXYS |
MOSFET P-CH 100V 36A TO-268 |
Tube | - | MOSFET P-Channel, Metal Oxide | Standard | 100V | 36A (Tc) | - | - | - | - | - | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 |
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IRF2903ZSPBF |
International Rectifier |
MOSFET N-CH 30V 75A D2PAK |
Tube | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 75A (Tc) | 2.4 mOhm @ 75A, 10V | 4V @ 150µA | 240nC @ 10V | 6320pF @ 25V | 231W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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IXTH4N150 |
IXYS |
MOSFET N-CH 1500V 4A TO-247 |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 1500V (1.5kV) | 4A (Tc) | 6 Ohm @ 2A, 10V | 5V @ 250µA | 44.5nC @ 10V | 1576pF @ 25V | 280W | Through Hole | TO-247-3 | TO-247 (IXTH) |
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R5011FNX |
Rohm Semiconductor |
MOSFET N-CH 500V 11A TO-220FM |
Bulk | - | MOSFET N-Channel, Metal Oxide | Standard | 500V | 5.4A (Tc) | 520 mOhm @ 5.5A, 10V | 4V @ 1mA | 30nC @ 10V | 950pF @ 25V | 50W | Through Hole | TO-220-3 Full Pack | TO-220FM |
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IXTH3N150 |
IXYS |
MOSFET N-CH 1500V 3A TO-247 |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 1500V (1.5kV) | 3A (Tc) | 7.3 Ohm @ 1.5A, 10V | 5V @ 250µA | 38.6nC @ 10V | 1375pF @ 25V | 250W | Through Hole | TO-247-3 | TO-247 (IXTH) |
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IXFH120N15P |
IXYS |
MOSFET N-CH 150V 120A TO-247 |
Tube | PolarHT™ HiPerFET™ | MOSFET N-Channel, Metal Oxide | Standard | 150V | 120A (Tc) | 16 mOhm @ 500mA, 10V | 5V @ 4mA | 150nC @ 10V | 4900pF @ 25V | 600W | Through Hole | TO-247-3 | TO-247AD (IXFH) |
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IRF1405ZL-7PPBF |
International Rectifier |
MOSFET N-CH 55V 150A TO263CA-7 |
Tube | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 55V | 120A (Tc) | 4.9 mOhm @ 88A, 10V | 4V @ 150µA | 230nC @ 10V | 5360pF @ 25V | 230W | Through Hole | TO-263-7 (Straight Leads) | TO-263CA-7 |
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IXFH140N10P |
IXYS |
MOSFET N-CH 100V 140A TO-247 |
Tube | PolarHV™ HiPerFET™ | MOSFET N-Channel, Metal Oxide | Standard | 100V | 140A (Tc) | 11 mOhm @ 70A, 10V | 5V @ 4mA | 155nC @ 10V | 4700pF @ 25V | 600W | Through Hole | TO-247-3 | TO-247AD (IXFH) |
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PSMN3R3-80ES,127 |
NXP Semiconductors |
MOSFET N-CH 80V 120A I2PAK |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 80V | 120A (Tmb) | 3.3 mOhm @ 25A, 10V | 4V @ 1mA | 139nC @ 10V | 9961pF @ 40V | 338W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK |
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IXFH96N20P |
IXYS |
MOSFET N-CH 200V 96A TO-247 |
Tube | PolarHT™ HiPerFET™ | MOSFET N-Channel, Metal Oxide | Standard | 200V | 96A (Tc) | 24 mOhm @ 500mA, 10V | 5V @ 4mA | 145nC @ 10V | 4800pF @ 25V | 600W | Through Hole | TO-247-3 | TO-247AD (IXFH) |
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PSMN4R3-100ES,127 |
NXP Semiconductors |
MOSFET N-CH 100V 120A I2PAK |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 100V | 120A (Tmb) | 4.3 mOhm @ 25A, 10V | 4V @ 1mA | 170nC @ 10V | 9900pF @ 50V | 338W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK |
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IXTV200N10T |
IXYS |
MOSFET N-CH 100V 200A PLUS220 |
Tube | TrenchMV™ | MOSFET N-Channel, Metal Oxide | Standard | 100V | 200A (Tc) | 5.5 mOhm @ 50A, 10V | 4.5V @ 250µA | 152nC @ 10V | 9400pF @ 25V | 550W | Through Hole | TO-220-3, Short Tab | PLUS220 |
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APT4F120K |
Microsemi Power Products Group |
MOSFET N-CH 1200V 4A TO-220 |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 1200V (1.2kV) | 4A (Tc) | 4.6 Ohm @ 2A, 10V | 5V @ 500µA | 43nC @ 10V | 1385pF @ 25V | 225W | Through Hole | TO-220-3 | TO-220 |
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R6012FNX |
Rohm Semiconductor |
MOSFET N-CH 600V 12A TO-220FM |
Bulk | - | MOSFET N-Channel, Metal Oxide | Standard | 600V | 12A (Tc) | 510 mOhm @ 6A, 10V | 5V @ 1mA | 35nC @ 10V | 1300pF @ 25V | 50W | Through Hole | TO-220-3 Full Pack | TO-220FM |
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TK16J60W,S1VQ |
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A TO-3P(N) |
Tube | - | MOSFET N-Channel, Metal Oxide | Super Junction | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 130W | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) |
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IRF3805L-7PPBF |
International Rectifier |
MOSFET N-CH 55V 160A TO-263-7 |
Tube | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 55V | 160A (Tc) | 2.6 mOhm @ 140A, 10V | 4V @ 250µA | 200nC @ 10V | 7820pF @ 25V | 300W | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | D2PAK (7-Lead) |
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STW11NK90Z |
STMicroelectronics |
MOSFET N-CH 900V 9.2A TO-247 |
Tube | SuperMESH™ | MOSFET N-Channel, Metal Oxide | Standard | 900V | 9.2A (Tc) | 980 mOhm @ 4.6A, 10V | 4.5V @ 100µA | 115nC @ 10V | 3000pF @ 25V | 200W | Through Hole | TO-247-3 | TO-247-3 |
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APT24F50B |
Microsemi Power Products Group |
MOSFET N-CH 500V 24A TO-247 |
Tube | POWER MOS 8™ | MOSFET N-Channel, Metal Oxide | Standard | 500V | 24A (Tc) | 240 mOhm @ 11A, 10V | 5V @ 1mA | 90nC @ 10V | 3630pF @ 25V | 335W | Through Hole | TO-247-3 | TO-247 [B] |
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APT30N60BC6 |
Microsemi Power Products Group |
MOSFET N-CH 600V 30A TO-247 |
Tube | CoolMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 600V | 30A (Tc) | 125 mOhm @ 14.5A, 10V | 3.5V @ 960µA | 88nC @ 10V | 2267pF @ 25V | 219W | Through Hole | TO-247-3 | TO-247 [B] |
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TK35N65W,S1F |
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 35A TO-247 |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 650V | 35A (Ta) | 80 mOhm @ 17.5A, 10V | 3.5V @ 2.1mA | 100nC @ 10V | 4100pF @ 300V | 270W | Through Hole | TO-247-3 | TO-247 |
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APT38N60BC6 |
Microsemi Power Products Group |
MOSFET N-CH 600V 38A TO-247 |
Tube | CoolMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 600V | 38A (Tc) | 99 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 112nC @ 10V | 2826pF @ 25V | 278W | Through Hole | TO-247-3 | TO-247 [B] |
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TK31J60W,S1VQ |
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 30.8A TO-3P(N) |
Tube | - | MOSFET N-Channel, Metal Oxide | Super Junction | 600V | 30.8A (Ta) | 88 mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86nC @ 10V | 3000pF @ 300V | 230W | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) |
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EPC8007ENGR |
EPC |
TRAN GAN 40V 3.8A BUMPED DIE |
Tray | eGaN® | GaNFET N-Channel, Gallium Nitride | Logic Level Gate | 40V | 3.8A (Ta) | 160 mOhm @ 500mA, 5V | 2.5V @ 250µA | - | 39pF @ 20V | - | Surface Mount | Die | Die |
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APT1204R7BFLLG |
Microsemi Power Products Group |
MOSFET N-CH 1200V 3.5A TO-247 |
Tube | POWER MOS 7® | MOSFET N-Channel, Metal Oxide | Standard | 1200V (1.2kV) | 3.5A (Tc) | 4.7 Ohm @ 1.75A, 10V | 5V @ 1mA | 31nC @ 10V | 715pF @ 25V | 135W | Through Hole | TO-247-3 | TO-247 [B] |
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APT18M100B |
Microsemi Power Products Group |
MOSFET N-CH 1000V 18A TO-247 |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 1000V (1kV) | 18A (Tc) | 700 mOhm @ 9A, 10V | 5V @ 1mA | 150nC @ 10V | 4845pF @ 25V | 625W | Through Hole | TO-247-3 | TO-247 [B] |
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APT22F80B |
Microsemi Power Products Group |
MOSFET N-CH 800V 22A TO-247 |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 800V | 23A (Tc) | 500 mOhm @ 12A, 10V | 5V @ 1mA | 150nC @ 10V | 4595pF @ 25V | 625W | Through Hole | TO-247-3 | TO-247 [B] |
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EPC8007TENGR |
EPC |
TRANS GAN 40V 3.8A BUMPED DIE |
Tray | eGaN® | GaNFET N-Channel, Gallium Nitride | Logic Level Gate | 40V | 3.8A (Ta) | 160 mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.302nC @ 20V | 39pF @ 20V | - | Surface Mount | Die | Die |
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APT17F100B |
Microsemi Power Products Group |
MOSFET N-CH 1000V 17A TO-247 |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 1000V (1kV) | 17A (Tc) | 800 mOhm @ 9A, 10V | 5V @ 1mA | 150nC @ 10V | 4845pF @ 25V | 625W | Through Hole | TO-247-3 | TO-247 [B] |
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APT56F50B2 |
Microsemi Power Products Group |
MOSFET N-CH 500V 56A TO-247 |
Tube | POWER MOS 8™ | MOSFET N-Channel, Metal Oxide | Standard | 500V | 56A (Tc) | 100 mOhm @ 28A, 10V | 5V @ 2.5mA | 220nC @ 10V | 8800pF @ 25V | 780W | Through Hole | TO-247-3 Variant | T-MAX™ [B2] |
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APT5014BLLG |
Microsemi Power Products Group |
MOSFET N-CH 500V 35A TO-247 |
Tube | POWER MOS 7® | MOSFET N-Channel, Metal Oxide | Standard | 500V | 35A (Tc) | 140 mOhm @ 17.5A, 10V | 5V @ 1mA | 72nC @ 10V | 3261pF @ 25V | 403W | Through Hole | TO-247-3 | TO-247 [B] |
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EPC8008ENGR |
EPC |
TRAN GAN 40V 2.7A BUMPED DIE |
Tray | eGaN® | GaNFET N-Channel, Gallium Nitride | Logic Level Gate | 40V | 2.7A (Ta) | 325 mOhm @ 500mA, 5V | 2.5V @ 250µA | - | 25pF @ 20V | - | Surface Mount | Die | Die |
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EPC8008TENGR |
EPC |
TRANS GAN 40V 2.7A BUMPED DIE |
Tray | eGaN® | GaNFET N-Channel, Gallium Nitride | Logic Level Gate | 40V | 2.7A (Ta) | 325 mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.177nC @ 20V | 25pF @ 20V | - | Surface Mount | Die | Die |
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APT5010B2LLG |
Microsemi Power Products Group |
MOSFET N-CH 500V 46A T-MAX |
Tube | POWER MOS 7® | MOSFET N-Channel, Metal Oxide | Standard | 500V | 46A (Tc) | 100 mOhm @ 23A, 10V | 5V @ 2.5mA | 95nC @ 10V | 4360pF @ 25V | 520W | Through Hole | TO-247-3 Variant | T-MAX™ [B2] |
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APT41M80L |
Microsemi Power Products Group |
MOSFET N-CH 800V 43A TO-264 |
Tube | POWER MOS 8™ | MOSFET N-Channel, Metal Oxide | Standard | 800V | 43A (Tc) | 210 mOhm @ 20A, 10V | 5V @ 2.5mA | 260nC @ 10V | 8070pF @ 25V | 1040W | Through Hole | TO-264-3, TO-264AA | TO-264 [L] |
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APT5010B2FLLG |
Microsemi Power Products Group |
MOSFET N-CH 500V 46A T-MAX |
Tube | POWER MOS 7® | MOSFET N-Channel, Metal Oxide | Standard | 500V | 46A (Tc) | 100 mOhm @ 23A, 10V | 5V @ 2.5mA | 95nC @ 10V | 4360pF @ 25V | 520W | Through Hole | TO-247-3 Variant | T-MAX™ [B2] |
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EPC8003ENGR |
EPC |
TRAN GAN 100V 2.5A BUMPED DIE |
Tray | eGaN® | GaNFET N-Channel, Gallium Nitride | Logic Level Gate | 100V | 2.5A (Ta) | 300 mOhm @ 500mA, 5V | 2.5V @ 250µA | - | 38pF @ 50V | - | Surface Mount | Die | Die |
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EPC8009TENGR |
EPC |
TRANS GAN 65V 4.1A BUMPED DIE |
Tray | eGaN® | GaNFET N-Channel, Gallium Nitride | Logic Level Gate | 65V | 4.1A (Tc) | 138 mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.380nC @ 32.5V | 47pF @ 32.5V | - | Surface Mount | Die | Die |
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EPC8010TENGR |
EPC |
TRANS GAN 100V 3.4A BUMPED DIE |
* | eGaN® | GaNFET N-Channel, Gallium Nitride | Logic Level Gate | 100V | 3.4A (Ta) | 160 mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.354nC @ 50V | 47pF @ 50V | - | * | - | * |
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APT44F80L |
Microsemi Power Products Group |
MOSFET N-CH 800V 44A TO-264 |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 800V | 47A (Tc) | 240 mOhm @ 24A, 10V | 5V @ 2.5mA | 305nC @ 10V | 9330pF @ 25V | 1135W | Through Hole | TO-264-3, TO-264AA | TO-264 |
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EPC8004TENGR |
EPC |
TRANS GAN 40V 4.4A BUMPED DIE |
Tray | eGaN® | GaNFET N-Channel, Gallium Nitride | Logic Level Gate | 40V | 4.4A (Ta) | 125 mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.358nC @ 20V | 45pF @ 20V | - | Surface Mount | Die | Die |
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APT10078BLLG |
Microsemi Power Products Group |
MOSFET N-CH 1000V 14A TO-247 |
Tube | POWER MOS 7® | MOSFET N-Channel, Metal Oxide | Standard | 1000V (1kV) | 14A (Tc) | 780 mOhm @ 7A, 10V | 5V @ 1mA | 95nC @ 10V | 2525pF @ 25V | 403W | Through Hole | TO-247-3 | TO-247 [B] |
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APT36N90BC3G |
Microsemi Power Products Group |
MOSFET N-CH 900V 36A TO-247 |
Tube | CoolMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 900V | 36A (Tc) | 120 mOhm @ 18A, 10V | 3.5V @ 2.9mA | 252nC @ 10V | 7463pF @ 25V | 390W | Through Hole | TO-247-3 | TO-247 [B] |