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Part Number |
Manufacturer |
Description |
Packaging | Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case | Supplier Device Package |
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IRFS7434TRL7PP |
International Rectifier |
MOSFET N-CH 40V 240A D2PAK-7 |
Digi-Reel® | HEXFET®, StrongIRFET™ | MOSFET N-Channel, Metal Oxide | Standard | 40V | 240A (Tc) | 1 mOhm @ 100A, 10V | 3.9V @ 250µA | 315nC @ 10V | 10250pF @ 25V | 245W | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | D2PAK-7 |
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DMP32D4S-13 |
Diodes Incorporated |
MOSFET P-CH 30V 300MA SOT23 |
Digi-Reel® | - | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 30V | 300mA (Ta) | 2.4 Ohm @ 300mA, 10V | 2.4V @ 250µA | 0.6nC @ 4.5V | 51.16pF @ 15V | 370mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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FDA16N50_F109 |
Fairchild Semiconductor |
MOSFET N-CH 500V 16.5A TO-3P |
Tube | UniFET™ | MOSFET N-Channel, Metal Oxide | Standard | 500V | 16.5A (Tc) | 380 mOhm @ 8.3A, 10V | 5V @ 250µA | 45nC @ 10V | 1945pF @ 25V | 205W | Through Hole | TO-3P-3, SC-65-3 | TO-3PN |
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IPD50R950CE |
Infineon Technologies |
MOSFET N-CH 500V 4.3A PG-TO252 |
Tape & Reel (TR) | CoolMOS™ | MOSFET N-Channel, Metal Oxide | Super Junction | 500V | 4.3A | 950 mOhm @ 1.2A, 13V | 3.5V @ 100µA | 10.5nC @ 10V | 231pF @ 100V | 34W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 |
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IRF9540SPBF |
Vishay Siliconix |
MOSFET P-CH 100V 19A D2PAK |
Tube | - | MOSFET P-Channel, Metal Oxide | Standard | 100V | 19A (Tc) | 200 mOhm @ 11A, 10V | 4V @ 250µA | 61nC @ 10V | 1400pF @ 25V | 3.7W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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IPD50R950CE |
Infineon Technologies |
MOSFET N-CH 500V 4.3A PG-TO252 |
Cut Tape (CT) | CoolMOS™ | MOSFET N-Channel, Metal Oxide | Super Junction | 500V | 4.3A | 950 mOhm @ 1.2A, 13V | 3.5V @ 100µA | 10.5nC @ 10V | 231pF @ 100V | 34W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 |
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FCPF11N60F |
Fairchild Semiconductor |
MOSFET N-CH 600V 11A TO-220F |
Tube | SuperFET™ | MOSFET N-Channel, Metal Oxide | Standard | 600V | 11A (Tc) | 380 mOhm @ 5.5A, 10V | 5V @ 250µA | 52nC @ 10V | 1490pF @ 25V | 36W | Through Hole | TO-220-3 Full Pack | TO-220F |
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IPD50R950CE |
Infineon Technologies |
MOSFET N-CH 500V04.3A PG-TO252 |
Digi-Reel® | CoolMOS™ | MOSFET N-Channel, Metal Oxide | Super Junction | 500V | 4.3A | 950 mOhm @ 1.2A, 13V | 3.5V @ 100µA | 10.5nC @ 10V | 231pF @ 100V | 34W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 |
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FDI030N06 |
Fairchild Semiconductor |
MOSFET N-CH 60V 120A I2PAK |
Tube | PowerTrench® | MOSFET N-Channel, Metal Oxide | Standard | 60V | 120A (Tc) | 3.2 mOhm @ 75A, 10V | 4.5V @ 250µA | 151nC @ 10V | 9815pF @ 25V | 231W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK |
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SSM3J36FS(T5L,F,T) |
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 330MA SSM |
Tape & Reel (TR) | - | MOSFET P-Channel, Metal Oxide | Logic Level Gate, 1.5V Drive | 20V | 330mA (Ta) | 1.31 Ohm @ 100mA, 4.5V | 1V @ 1mA | 1.2nC @ 4V | 43pF @ 10V | 150mW | Surface Mount | SC-75, SOT-416 | SSM |
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FQA65N20 |
Fairchild Semiconductor |
MOSFET N-CH 200V 65A TO-3P |
Tube | QFET® | MOSFET N-Channel, Metal Oxide | Standard | 200V | 65A | 32 mOhm @ 32.5A, 10V | 5V @ 250µA | 200nC @ 10V | 7900pF @ 25V | 310W | Through Hole | TO-3P-3, SC-65-3 | TO-3PN |
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APT15F60B |
Microsemi Power Products Group |
MOSFET N-CH 600V 15A TO-247 |
Tube | POWER MOS 8™ | MOSFET N-Channel, Metal Oxide | Standard | 600V | 16A (Tc) | 430 mOhm @ 7A, 10V | 5V @ 500µA | 72nC @ 10V | 2882pF @ 25V | 290W | Through Hole | TO-247-3 | TO-247 [B] |
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SIHW30N60E-GE3 |
Vishay Siliconix |
MOSFET N-CH 600V 29A TO-247AD |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 600V | 29A (Tc) | 125 mOhm @ 15A, 10V | 4V @ 250µA | 130nC @ 10V | 2600pF @ 100V | 250W | Through Hole | TO-3P-3 Full Pack | TO-247AD |
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APT9M100B |
Microsemi Power Products Group |
MOSFET N-CH 1000V 9A TO-247 |
Tube | POWER MOS 8™ | MOSFET N-Channel, Metal Oxide | Standard | 1000V (1kV) | 9A (Tc) | 1.4 Ohm @ 5A, 10V | 5V @ 1mA | 80nC @ 10V | 2605pF @ 25V | 335W | Through Hole | TO-247-3 | TO-247 [B] |
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IXFV52N30P |
IXYS |
MOSFET N-CH 300V 52A PLUS220 |
Tube | PolarHT™ HiPerFET™ | MOSFET N-Channel, Metal Oxide | Standard | 300V | 52A (Tc) | 66 mOhm @ 500mA, 10V | 5V @ 4mA | 110nC @ 10V | 3490pF @ 25V | 400W | Through Hole | TO-220-3, Short Tab | PLUS220 |
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APT9F100B |
Microsemi Power Products Group |
MOSFET N-CH 1000V 9A TO-247 |
Tube | POWER MOS 8™ | MOSFET N-Channel, Metal Oxide | Standard | 1000V (1kV) | 9A (Tc) | 1.6 Ohm @ 5A, 10V | 5V @ 1mA | 80nC @ 10V | 2606pF @ 25V | 337W | Through Hole | TO-247-3 | TO-247 [B] |
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APT12M80B |
Microsemi Power Products Group |
MOSFET N-CH 800V 13A TO-247 |
Tube | POWER MOS 8™ | MOSFET N-Channel, Metal Oxide | Standard | 800V | 13A (Tc) | 800 mOhm @ 6A, 10V | 5V @ 1mA | 80nC @ 10V | 2470pF @ 25V | 335W | Through Hole | TO-247-3 | TO-247 [B] |
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APT37F50B |
Microsemi Power Products Group |
MOSFET N-CH 500V 37A TO-247 |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 500V | 37A (Tc) | 150 mOhm @ 18A, 10V | 5V @ 1mA | 145nC @ 10V | 5710pF @ 25V | 520W | Through Hole | TO-247-3 | TO-247 [B] |
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APT18M80B |
Microsemi Power Products Group |
MOSFET N-CH 800V 19A TO-247 |
Tube | POWER MOS 8™ | MOSFET N-Channel, Metal Oxide | Standard | 800V | 19A (Tc) | 530 mOhm @ 9A, 10V | 5V @ 1mA | 120nC @ 10V | 3760pF @ 25V | 500W | Through Hole | TO-247-3 | TO-247 [B] |
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TK31J60W5,S1VQ |
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 30.8 TO-3P(N) |
Tube | - | MOSFET N-Channel, Metal Oxide | Super Junction | 600V | 30.8A (Ta) | 88 mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 105nC @ 10V | 3000pF @ 300V | 230W | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) |
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IXFH21N50Q |
IXYS |
MOSFET N-CH 500V 21A TO-247 |
Tube | HiPerFET™ | MOSFET N-Channel, Metal Oxide | Standard | 500V | 21A (Tc) | 250 mOhm @ 10.5A, 10V | 4.5V @ 4mA | 84nC @ 10V | 3000pF @ 25V | 280W | Through Hole | TO-247-3 | TO-247AD (IXFH) |
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APT17F80B |
Microsemi Power Products Group |
MOSFET N-CH 800V 18A TO-247 |
Tube | POWER MOS 8™ | MOSFET N-Channel, Metal Oxide | Standard | 800V | 18A (Tc) | 580 mOhm @ 9A, 10V | 5V @ 1mA | 122nC @ 10V | 3757pF @ 25V | 500W | Through Hole | TO-247-3 | TO-247 [B] |
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IXFR30N60P |
IXYS |
MOSFET N-CH 600V 15A ISOPLUS247 |
Tube | PolarHV™ HiPerFET™ | MOSFET N-Channel, Metal Oxide | Standard | 600V | 15A (Tc) | 250 mOhm @ 15A, 10V | 5V @ 4mA | 85nC @ 10V | 3820pF @ 25V | 166W | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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APT53N60BC6 |
Microsemi Power Products Group |
MOSFET N-CH 600V 53A TO-247 |
Tube | CoolMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 600V | 53A (Tc) | 70 mOhm @ 25.8A, 10V | 3.5V @ 1.72mA | 154nC @ 10V | 4020pF @ 25V | 417W | Through Hole | TO-247-3 | TO-247 [B] |
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APT1003RBLLG |
Microsemi Power Products Group |
MOSFET N-CH 1000V 4A TO-247 |
Tube | POWER MOS 7® | MOSFET N-Channel, Metal Oxide | Standard | 1000V (1kV) | 4A (Tc) | 3 Ohm @ 2A, 10V | 5V @ 1mA | 34nC @ 10V | 694pF @ 25V | 139W | Through Hole | TO-247-3 | TO-247 [B] |
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IXFR24N90P |
IXYS |
MOSFET N-CH 900V 13A ISOPLUS247 |
Tube | Polar™ HiPerFET™ | MOSFET N-Channel, Metal Oxide | Standard | 900V | 13A (Tc) | 460 mOhm @ 12A, 10V | 6.5V @ 1mA | 130nC @ 10V | 7200pF @ 25V | 230W | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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APT43M60L |
Microsemi Power Products Group |
MOSFET N-CH 600V 45A TO-264 |
Tube | POWER MOS 8™ | MOSFET N-Channel, Metal Oxide | Standard | 600V | 45A (Tc) | 150 mOhm @ 21A, 10V | 5V @ 2.5mA | 215nC @ 10V | 8590pF @ 25V | 780W | Through Hole | TO-264-3, TO-264AA | TO-264 [L] |
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APT43M60B2 |
Microsemi Power Products Group |
MOSFET N-CH 600V 45A T-MAX |
Tube | POWER MOS 8™ | MOSFET N-Channel, Metal Oxide | Standard | 600V | 45A (Tc) | 150 mOhm @ 21A, 10V | 5V @ 2.5mA | 215nC @ 10V | 8590pF @ 25V | 780W | Through Hole | TO-247-3 Variant | T-MAX™ [B2] |
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APT43F60B2 |
Microsemi Power Products Group |
MOSFET N-CH 600V 45A T-MAX |
Tube | POWER MOS 8™ | MOSFET N-Channel, Metal Oxide | Standard | 600V | 45A (Tc) | 150 mOhm @ 21A, 10V | 5V @ 2.5mA | 215nC @ 10V | 8590pF @ 25V | 780W | Through Hole | TO-247-3 Variant | T-MAX™ [B2] |
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APT34F60B |
Microsemi Power Products Group |
MOSFET N-CH 600V 34A TO-247 |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 600V | 36A (Tc) | 210 mOhm @ 17A, 10V | 5V @ 1mA | 165nC @ 10V | 6640pF @ 25V | 624W | Through Hole | TO-247-3 | TO-247 [B] |
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APT77N60BC6 |
Microsemi Power Products Group |
MOSFET N-CH 600V 77A TO-247 |
Tube | CoolMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 600V | 77A (Tc) | 41 mOhm @ 44.4A, 10V | 3.6V @ 2.96mA | 260nC @ 10V | 13600pF @ 25V | 481W | Through Hole | TO-247-3 | TO-247 [B] |
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IXFX150N15 |
IXYS |
MOSFET N-CH 150V 150A PLUS247 |
Tube | HiPerFET™ | MOSFET N-Channel, Metal Oxide | Standard | 150V | 150A (Tc) | 12.5 mOhm @ 75A, 10V | 4V @ 8mA | 360nC @ 10V | 9100pF @ 25V | 560W | Through Hole | TO-247-3 | PLUS247™-3 |
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APT47N60SC3G |
Microsemi Power Products Group |
MOSFET N-CH 600V 47A D3PAK |
Tube | CoolMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 600V | 47A (Tc) | 70 mOhm @ 30A, 10V | 3.9V @ 2.7mA | 260nC @ 10V | 7015pF @ 25V | 417W | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3 [S] |
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APT41M80B2 |
Microsemi Power Products Group |
MOSFET N-CH 800V 43A T-MAX |
Tube | POWER MOS 8™ | MOSFET N-Channel, Metal Oxide | Standard | 800V | 43A (Tc) | 210 mOhm @ 20A, 10V | 5V @ 2.5mA | 260nC @ 10V | 8070pF @ 25V | 1040W | Through Hole | TO-247-3 Variant | T-MAX™ [B2] |
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APT38F80B2 |
Microsemi Power Products Group |
MOSFET N-CH 800V 41A T-MAX |
Tube | POWER MOS 8™ | MOSFET N-Channel, Metal Oxide | Standard | 800V | 41A (Tc) | 240 mOhm @ 20A, 10V | 5V @ 2.5mA | 260nC @ 10V | 8070pF @ 25V | 1040W | Through Hole | TO-247-3 Variant | T-MAX™ [B2] |
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APT24M120B2 |
Microsemi Power Products Group |
MOSFET N-CH 1200V 24A T-MAX |
Tube | POWER MOS 8™ | MOSFET N-Channel, Metal Oxide | Standard | 1200V (1.2kV) | 24A (Tc) | 630 mOhm @ 12A, 10V | 5V @ 2.5mA | 260nC @ 10V | 8370pF @ 25V | 1040W | Through Hole | TO-247-3 Variant | T-MAX™ [B2] |
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APT66F60B2 |
Microsemi Power Products Group |
MOSFET N-CH 600V 70A TO-247 |
Tube | POWER MOS 8™ | MOSFET N-Channel, Metal Oxide | Standard | 600V | 70A (Tc) | 90 mOhm @ 33A, 10V | 5V @ 2.5mA | 330nC @ 10V | 13190pF @ 25V | 1135W | Through Hole | TO-247-3 Variant | T-MAX™ [B2] |
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APT37M100B2 |
Microsemi Power Products Group |
MOSFET N-CH 1000V 37A T-MAX |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 1000V (1kV) | 37A (Tc) | 330 mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | 9835pF @ 25V | 1135W | Through Hole | TO-247-3 Variant | T-MAX™ [B2] |
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IXFR48N60Q3 |
IXYS |
MOSFET N-CH 600V 32A ISOPLUS247 |
Tube | HiPerFET™ | MOSFET N-Channel, Metal Oxide | Standard | 600V | 32A (Tc) | 154 mOhm @ 24A, 10V | 6.5V @ 4mA | 140nC @ 10V | 7020pF @ 25V | 500W | Through Hole | TO-247-3 | ISOPLUS247™ |
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APT34F100B2 |
Microsemi Power Products Group |
MOSFET N-CH 1000V 35A T-MAX |
Tube | POWER MOS 8™ | MOSFET N-Channel, Metal Oxide | Standard | 1000V (1kV) | 35A (Tc) | 380 mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | 9835pF @ 25V | 1135W | Through Hole | TO-247-3 Variant | T-MAX™ [B2] |
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APT22F120B2 |
Microsemi Power Products Group |
MOSFET N-CH 1200V 23A T-MAX |
Tube | POWER MOS 8™ | MOSFET N-Channel, Metal Oxide | Standard | 1200V (1.2kV) | 23A (Tc) | 700 mOhm @ 12A, 10V | 5V @ 2.5mA | 260nC @ 10V | 8370pF @ 25V | 1040W | Through Hole | TO-247-3 Variant | T-MAX™ [B2] |
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APT50M65B2LLG |
Microsemi Power Products Group |
MOSFET N-CH 500V 67A T-MAX |
Tube | POWER MOS 7® | MOSFET N-Channel, Metal Oxide | Standard | 500V | 67A (Tc) | 65 mOhm @ 33.5A, 10V | 5V @ 2.5mA | 141nC @ 10V | 7010pF @ 25V | 694W | Through Hole | TO-247-3 Variant | T-MAX™ [B2] |
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APT26F120B2 |
Microsemi Power Products Group |
MOSFET N-CH 1200V 27A T-MAX |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 1200V (1.2kV) | 27A (Tc) | 650 mOhm @ 14A, 10V | 5V @ 2.5mA | 300nC @ 10V | 9670pF @ 25V | 1135W | Through Hole | TO-247-3 Variant | T-MAX™ |
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APT26F120L |
Microsemi Power Products Group |
MOSFET N-CH 1200V 27A TO-264 |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 1200V (1.2kV) | 27A (Tc) | 650 mOhm @ 14A, 10V | 5V @ 2.5mA | 300nC @ 10V | 9670pF @ 25V | 1135W | Through Hole | TO-264-3, TO-264AA | TO-264 [L] |
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APT94N65B2C3G |
Microsemi Power Products Group |
MOSFET N-CH 650V 94A TO-247 |
Tube | CoolMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 650V | 94A (Tc) | 35 mOhm @ 47A, 10V | 3.9V @ 5.8mA | 580nC @ 10V | 13940pF @ 25V | 833W | Through Hole | TO-247-3 Variant | T-MAX™ [B2] |
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IXTX22N100L |
IXYS |
MOSFET N-CH 1000V 22A PLUS247 |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 1000V (1kV) | 22A (Tc) | 600 mOhm @ 11A, 20V | 5V @ 250µA | 270nC @ 15V | 7050pF @ 25V | 700W | Through Hole | TO-247-3 | PLUS247™-3 |
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IXTK17N120L |
IXYS |
MOSFET N-CH 1200V 17A TO-264 |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 1200V (1.2kV) | 17A (Tc) | 900 mOhm @ 8.5A, 20V | 5V @ 250µA | 155nC @ 15V | 8300pF @ 25V | 700W | Through Hole | TO-264-3, TO-264AA | TO-264 (IXTK) |
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IXFB50N80Q2 |
IXYS |
MOSFET N-CH 800V 50A PLUS264 |
Tube | HiPerFET™ | MOSFET N-Channel, Metal Oxide | Standard | 800V | 50A (Tc) | 160 mOhm @ 500mA, 10V | 5.5V @ 8mA | 260nC @ 10V | 7200pF @ 25V | 890W | Through Hole | TO-264-3, TO-264AA | PLUS264™ |
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SSM3J36FS(T5L,F,T) |
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 330MA SSM |
Cut Tape (CT) | - | MOSFET P-Channel, Metal Oxide | Logic Level Gate, 1.5V Drive | 20V | 330mA (Ta) | 1.31 Ohm @ 100mA, 4.5V | 1V @ 1mA | 1.2nC @ 4V | 43pF @ 10V | 150mW | Surface Mount | SC-75, SOT-416 | SSM |
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SSM3J36FS(T5L,F,T) |
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 330MA SSM |
Digi-Reel® | - | MOSFET P-Channel, Metal Oxide | Logic Level Gate, 1.5V Drive | 20V | 330mA (Ta) | 1.31 Ohm @ 100mA, 4.5V | 1V @ 1mA | 1.2nC @ 4V | 43pF @ 10V | 150mW | Surface Mount | SC-75, SOT-416 | SSM |
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IRFH3707TR2PBF |
International Rectifier |
MOSFET N-CH 30V 12A PQFN33 |
Tape & Reel (TR) | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 12A (Ta), 29A (Tc) | 12.4 mOhm @ 12A, 10V | 2.35V @ 25µA | 8.1nC @ 4.5V | 755pF @ 15V | 2.8W | Surface Mount | 8-PowerVDFN | 8-PQFN (3x3) |
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SI8812DB-T2-E1 |
Vishay Siliconix |
MOSFET N-CH D-S 20V MICROFOOT |
Tape & Reel (TR) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate, 2.5V Drive | 20V | 2.3A (Ta) | 59 mOhm @ 1A, 4.5V | 1V @ 250µA | 17nC @ 8V | - | - | Surface Mount | 4-UFBGA | 4-Microfoot |
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IRFH3707TR2PBF |
International Rectifier |
MOSFET N-CH 30V 12A PQFN33 |
Cut Tape (CT) | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 12A (Ta), 29A (Tc) | 12.4 mOhm @ 12A, 10V | 2.35V @ 25µA | 8.1nC @ 4.5V | 755pF @ 15V | 2.8W | Surface Mount | 8-PowerVDFN | 8-PQFN (3x3) |
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IRFH3707TR2PBF |
International Rectifier |
MOSFET N-CH 30V 12A PQFN33 |
Digi-Reel® | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 12A (Ta), 29A (Tc) | 12.4 mOhm @ 12A, 10V | 2.35V @ 25µA | 8.1nC @ 4.5V | 755pF @ 15V | 2.8W | Surface Mount | 8-PowerVDFN | 8-PQFN (3x3) |
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SI8812DB-T2-E1 |
Vishay Siliconix |
MOSFET N-CH D-S 20V MICROFOOT |
Cut Tape (CT) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate, 2.5V Drive | 20V | 2.3A (Ta) | 59 mOhm @ 1A, 4.5V | 1V @ 250µA | 17nC @ 8V | - | - | Surface Mount | 4-UFBGA | 4-Microfoot |
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SI8812DB-T2-E1 |
Vishay Siliconix |
MOSFET N-CH D-S 20V MICROFOOT |
Digi-Reel® | TrenchFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate, 2.5V Drive | 20V | 2.3A (Ta) | 59 mOhm @ 1A, 4.5V | 1V @ 250µA | 17nC @ 8V | - | - | Surface Mount | 4-UFBGA | 4-Microfoot |
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SI1427EDH-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH D-S 20V SOT-363 |
Tape & Reel (TR) | TrenchFET® | MOSFET P-Channel, Metal Oxide | Logic Level Gate, 1.5V Drive | 20V | 2A (Ta), 2A (Tc) | 64 mOhm @ 3A, 4.5V | 1V @ 250µA | 21nC @ 8V | - | 2.8W | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 (SOT-363) |
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SI1427EDH-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH D-S 20V SOT-363 |
Cut Tape (CT) | TrenchFET® | MOSFET P-Channel, Metal Oxide | Logic Level Gate, 1.5V Drive | 20V | 2A (Ta), 2A (Tc) | 64 mOhm @ 3A, 4.5V | 1V @ 250µA | 21nC @ 8V | - | 2.8W | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 (SOT-363) |
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SSM3J325F,LF |
Toshiba Semiconductor and Storage |
MOSF P CH 20V 2A S-MINI |
Tape & Reel (TR) | - | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 20V | 2A (Ta) | 150 mOhm @ 1A, 4.5V | - | 4.6nC @ 4.5V | 270pF @ 10V | 600mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
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SSM3J325F,LF |
Toshiba Semiconductor and Storage |
MOSF P CH 20V 2A S-MINI |
Cut Tape (CT) | - | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 20V | 2A (Ta) | 150 mOhm @ 1A, 4.5V | - | 4.6nC @ 4.5V | 270pF @ 10V | 600mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
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SI1427EDH-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH D-S 20V SOT-363 |
Digi-Reel® | TrenchFET® | MOSFET P-Channel, Metal Oxide | Logic Level Gate, 1.5V Drive | 20V | 2A (Ta), 2A (Tc) | 64 mOhm @ 3A, 4.5V | 1V @ 250µA | 21nC @ 8V | - | 2.8W | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 (SOT-363) |
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SSM3J325F,LF |
Toshiba Semiconductor and Storage |
MOSF P CH 20V 2A S-MINI |
Digi-Reel® | - | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 20V | 2A (Ta) | 150 mOhm @ 1A, 4.5V | - | 4.6nC @ 4.5V | 270pF @ 10V | 600mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
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2SK2035(T5L,F,T) |
Toshiba Semiconductor and Storage |
MOSF N CH 20V 100MA SSM |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Standard | 20V | 100mA | 12 Ohm @ 10mA, 2.5V | - | - | 8.5pF @ 3V | 100mW | Surface Mount | SC-75, SOT-416 | SSM |
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DMN3070SSN-7 |
Diodes Incorporated |
MOSFET N CH 30V 4.2A, SC59 |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 4.2A (Ta) | 40 mOhm @ 4.2A, 10V | 2.1V @ 250µA | 13.2nC @ 10V | 697pF @ 15V | 780mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SC-59 |
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2SK2035(T5L,F,T) |
Toshiba Semiconductor and Storage |
MOSF N CH 20V 100MA SSM |
Cut Tape (CT) | - | MOSFET N-Channel, Metal Oxide | Standard | 20V | 100mA | 12 Ohm @ 10mA, 2.5V | - | - | 8.5pF @ 3V | 100mW | Surface Mount | SC-75, SOT-416 | SSM |
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2SK2035(T5L,F,T) |
Toshiba Semiconductor and Storage |
MOSF N CH 20V 100MA SSM |
Digi-Reel® | - | MOSFET N-Channel, Metal Oxide | Standard | 20V | 100mA | 12 Ohm @ 10mA, 2.5V | - | - | 8.5pF @ 3V | 100mW | Surface Mount | SC-75, SOT-416 | SSM |
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DMN3070SSN-7 |
Diodes Incorporated |
MOSFET N CH 30V 4.2A, SC59 |
Cut Tape (CT) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 4.2A (Ta) | 40 mOhm @ 4.2A, 10V | 2.1V @ 250µA | 13.2nC @ 10V | 697pF @ 15V | 780mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SC-59 |
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SSM3J118TU(TE85L) |
Toshiba Semiconductor and Storage |
MOSF 30V 1.4A UFM |
Tape & Reel (TR) | - | MOSFET P-Channel, Metal Oxide | Logic Level Gate, 4V Drive | 30V | 1.4A (Ta) | 240 mOhm @ 650mA, 10V | - | - | 137pF @ 15V | 800mW | * | 3-SMD, Flat Leads | UFM |
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DMN3070SSN-7 |
Diodes Incorporated |
MOSFET N CH 30V 4.2A, SC59 |
Digi-Reel® | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 4.2A (Ta) | 40 mOhm @ 4.2A, 10V | 2.1V @ 250µA | 13.2nC @ 10V | 697pF @ 15V | 780mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SC-59 |
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SSM3J118TU(TE85L) |
Toshiba Semiconductor and Storage |
MOSF 30V 1.4A UFM |
Cut Tape (CT) | - | MOSFET P-Channel, Metal Oxide | Logic Level Gate, 4V Drive | 30V | 1.4A (Ta) | 240 mOhm @ 650mA, 10V | - | - | 137pF @ 15V | 800mW | * | 3-SMD, Flat Leads | UFM |
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SI4104DY-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH D-S 100V 8-SOIC |
Tape & Reel (TR) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Standard | 100V | 3.2A (Ta), 4.6A (Tc) | 105 mOhm @ 5A, 10V | 4.5V @ 250µA | 13nC @ 10V | 446pF @ 50V | 5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC N |
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SSM3J118TU(TE85L) |
Toshiba Semiconductor and Storage |
MOSF 30V 1.4A UFM |
Digi-Reel® | - | MOSFET P-Channel, Metal Oxide | Logic Level Gate, 4V Drive | 30V | 1.4A (Ta) | 240 mOhm @ 650mA, 10V | - | - | 137pF @ 15V | 800mW | * | 3-SMD, Flat Leads | UFM |
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SI4104DY-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH D-S 100V 8-SOIC |
Cut Tape (CT) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Standard | 100V | 3.2A (Ta), 4.6A (Tc) | 105 mOhm @ 5A, 10V | 4.5V @ 250µA | 13nC @ 10V | 446pF @ 50V | 5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC N |
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SSM3K01T(TE85L,F) |
Toshiba Semiconductor and Storage |
MOSFET N-CH TSM S-MOS |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 3.2A (Ta) | 120 mOhm @ 1.6A, 4V | - | - | 152pF @ 10V | 1.25W | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM |
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SSM3K01T(TE85L,F) |
Toshiba Semiconductor and Storage |
MOSFET N-CH TSM S-MOS |
Cut Tape (CT) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 3.2A (Ta) | 120 mOhm @ 1.6A, 4V | - | - | 152pF @ 10V | 1.25W | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM |
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SI4104DY-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH D-S 100V 8-SOIC |
Digi-Reel® | TrenchFET® | MOSFET N-Channel, Metal Oxide | Standard | 100V | 3.2A (Ta), 4.6A (Tc) | 105 mOhm @ 5A, 10V | 4.5V @ 250µA | 13nC @ 10V | 446pF @ 50V | 5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC N |
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SSM3K01T(TE85L,F) |
Toshiba Semiconductor and Storage |
MOSFET N-CH TSM S-MOS |
Digi-Reel® | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 3.2A (Ta) | 120 mOhm @ 1.6A, 4V | - | - | 152pF @ 10V | 1.25W | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM |
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DMP3028LFDE-13 |
Diodes Incorporated |
MOSFET P CH 30V 6.8A U-DFN2020-6 |
Tape & Reel (TR) | - | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 30V | 6.8A (Ta) | 32 mOhm @ 7A, 10V | 2.4V @ 250µA | 22nC @ 10V | 1241pF @ 15V | 660mW | Surface Mount | 6-UDFN Exposed Pad | 6-DFN2020 (2x2) |
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DMP3028LFDE-13 |
Diodes Incorporated |
MOSFET P CH 30V 6.8A U-DFN2020-6 |
Cut Tape (CT) | - | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 30V | 6.8A (Ta) | 32 mOhm @ 7A, 10V | 2.4V @ 250µA | 22nC @ 10V | 1241pF @ 15V | 660mW | Surface Mount | 6-UDFN Exposed Pad | 6-DFN2020 (2x2) |
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IRFHS8342TR2PBF |
International Rectifier |
MOSFET N-CH 30V 8.8A PQFN |
Cut Tape (CT) | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 8.8A (Ta), 19A (Tc) | 16 mOhm @ 8.5A, 10V | 2.35V @ 25µA | 8.7nC @ 10V | 600pF @ 25V | 2.1W | Surface Mount | 6-PowerVQFN | 6-PQFN (2x2) |
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DMP3028LFDE-13 |
Diodes Incorporated |
MOSFET P CH 30V 6.8A U-DFN2020-6 |
Digi-Reel® | - | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 30V | 6.8A (Ta) | 32 mOhm @ 7A, 10V | 2.4V @ 250µA | 22nC @ 10V | 1241pF @ 15V | 660mW | Surface Mount | 6-UDFN Exposed Pad | 6-DFN2020 (2x2) |
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IRFHS8342TR2PBF |
International Rectifier |
MOSFET N-CH 30V 8.8A PQFN |
Digi-Reel® | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 8.8A (Ta), 19A (Tc) | 16 mOhm @ 8.5A, 10V | 2.35V @ 25µA | 8.7nC @ 10V | 600pF @ 25V | 2.1W | Surface Mount | 6-PowerVQFN | 6-PQFN (2x2) |
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PSMN020-30MLC,115 |
NXP Semiconductors |
MOSFET N-CH 30V 31.8A LFPAK33 |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 31.8A (Tmb) | 18.1 mOhm @ 5A, 10V | 1.95V @ 1mA | 9.5nC @ 10V | 430pF @ 15V | 33W | Surface Mount | SOT1210, 8-LFPAK33 (5-Lead) | LFPAK33 |
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IRLHS6242TR2PBF |
International Rectifier |
MOSFET N-CH 20V 10A PQFN |
Cut Tape (CT) | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 20V | 10A (Ta), 12A (Tc) | 11.7 mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 14nC @ 4.5V | 1110pF @ 10V | 1.98W | Surface Mount | 6-PowerVDFN | 6-PQFN (2x2) |
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PSMN020-30MLC,115 |
NXP Semiconductors |
MOSFET N-CH 30V 31.8A LFPAK33 |
Cut Tape (CT) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 31.8A (Tmb) | 18.1 mOhm @ 5A, 10V | 1.95V @ 1mA | 9.5nC @ 10V | 430pF @ 15V | 33W | Surface Mount | SOT1210, 8-LFPAK33 (5-Lead) | LFPAK33 |
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IRLHS6242TR2PBF |
International Rectifier |
MOSFET N-CH 20V 10A PQFN |
Digi-Reel® | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 20V | 10A (Ta), 12A (Tc) | 11.7 mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 14nC @ 4.5V | 1110pF @ 10V | 1.98W | Surface Mount | 6-PowerVDFN | 6-PQFN (2x2) |
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PSMN020-30MLC,115 |
NXP Semiconductors |
MOSFET N-CH 30V 31.8A LFPAK33 |
Digi-Reel® | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 31.8A (Tmb) | 18.1 mOhm @ 5A, 10V | 1.95V @ 1mA | 9.5nC @ 10V | 430pF @ 15V | 33W | Surface Mount | SOT1210, 8-LFPAK33 (5-Lead) | LFPAK33 |
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PSMN9R0-25MLC,115 |
NXP Semiconductors |
MOSFET N-CH 25V 55A LFPAK33 |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 25V | 55A (Tmb) | 8.65 mOhm @ 15A, 10V | 1.95V @ 1mA | 11.7nC @ 10V | 705pF @ 12.5V | 45W | Surface Mount | SOT1210, 8-LFPAK33 (5-Lead) | LFPAK33 |
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SI3474DV-T1-GE3 |
Vishay Siliconix |
MOSFET N-CHAN 100V TSOP-6 |
Tape & Reel (TR) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 100V | 3.8A (Tc) | 126 mOhm @ 2A, 10V | 3V @ 250µA | 10.4nC @ 10V | 196pF @ 50V | 3.6W | Surface Mount | 6-TSOP (0.065", 1.65mm Width) | 6-TSOP |
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PSMN9R0-25MLC,115 |
NXP Semiconductors |
MOSFET N-CH 25V 55A LFPAK33 |
Cut Tape (CT) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 25V | 55A (Tmb) | 8.65 mOhm @ 15A, 10V | 1.95V @ 1mA | 11.7nC @ 10V | 705pF @ 12.5V | 45W | Surface Mount | SOT1210, 8-LFPAK33 (5-Lead) | LFPAK33 |
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SI3474DV-T1-GE3 |
Vishay Siliconix |
MOSFET N-CHAN 100V TSOP-6 |
Cut Tape (CT) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 100V | 3.8A (Tc) | 126 mOhm @ 2A, 10V | 3V @ 250µA | 10.4nC @ 10V | 196pF @ 50V | 3.6W | Surface Mount | 6-TSOP (0.065", 1.65mm Width) | 6-TSOP |
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PSMN9R0-25MLC,115 |
NXP Semiconductors |
MOSFET N-CH 25V 55A LFPAK33 |
Digi-Reel® | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 25V | 55A (Tmb) | 8.65 mOhm @ 15A, 10V | 1.95V @ 1mA | 11.7nC @ 10V | 705pF @ 12.5V | 45W | Surface Mount | SOT1210, 8-LFPAK33 (5-Lead) | LFPAK33 |
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SI3474DV-T1-GE3 |
Vishay Siliconix |
MOSFET N-CHAN 100V TSOP-6 |
Digi-Reel® | TrenchFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 100V | 3.8A (Tc) | 126 mOhm @ 2A, 10V | 3V @ 250µA | 10.4nC @ 10V | 196pF @ 50V | 3.6W | Surface Mount | 6-TSOP (0.065", 1.65mm Width) | 6-TSOP |
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DMP56D0UFB-7 |
Diodes Incorporated |
MOSFET P-CH 50V 200MA 3DFN |
Tape & Reel (TR) | - | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 50V | 200mA (Ta) | 6 Ohm @ 100mA, 4V | 1.2V @ 250µA | 0.58nC @ 4V | 50.54pF @ 25V | 425mW | Surface Mount | 3-UFDFN | 3-DFN1006 (1.0x0.6) |
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SI2392DS-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 100V SOT-23 |
Tape & Reel (TR) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 100V | 2.2A (Ta), 3.1A (Tc) | 126 mOhm @ 2A, 10V | 3V @ 250µA | 10.4nC @ 10V | 196pF @ 50V | 1.25W | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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DMP56D0UFB-7 |
Diodes Incorporated |
MOSFET P-CH 50V 200MA 3DFN |
Cut Tape (CT) | - | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 50V | 200mA (Ta) | 6 Ohm @ 100mA, 4V | 1.2V @ 250µA | 0.58nC @ 4V | 50.54pF @ 25V | 425mW | Surface Mount | 3-UFDFN | 3-DFN1006 (1.0x0.6) |
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SI2392DS-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 100V SOT-23 |
Cut Tape (CT) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 100V | 2.2A (Ta), 3.1A (Tc) | 126 mOhm @ 2A, 10V | 3V @ 250µA | 10.4nC @ 10V | 196pF @ 50V | 1.25W | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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SI2392DS-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 100V SOT-23 |
Digi-Reel® | TrenchFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 100V | 2.2A (Ta), 3.1A (Tc) | 126 mOhm @ 2A, 10V | 3V @ 250µA | 10.4nC @ 10V | 196pF @ 50V | 1.25W | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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DMP56D0UFB-7 |
Diodes Incorporated |
MOSFET P-CH 50V 200MA 3DFN |
Digi-Reel® | - | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 50V | 200mA (Ta) | 6 Ohm @ 100mA, 4V | 1.2V @ 250µA | 0.58nC @ 4V | 50.54pF @ 25V | 425mW | Surface Mount | 3-UFDFN | 3-DFN1006 (1.0x0.6) |
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DMN2250UFB-7B |
Diodes Incorporated |
MOSFET N-CH 20V 1.35A 3DFN |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 20V | 1.35A (Ta) | 170 mOhm @ 1A, 4.5V | 1V @ 250µA | 3.1nC @ 10V | 94pF @ 16V | 500mW | Surface Mount | 3-UFDFN | 3-DFN1006 (1.0x0.6) |