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Part Number |
Manufacturer |
Description |
Packaging | Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case | Supplier Device Package |
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IRFH4210TRPBF |
International Rectifier |
MOSF N CH 25V 45A PQFN |
Tape & Reel (TR) | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 25V | 45A | 1.35 mOhm @ 50A, 10V | 2.1V @ 100µA | 74nC @ 10V | 4812pF @ 13V | 3.6W | Surface Mount | 8-PowerTDFN | PQFN (5x6) |
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IRFR4104TRPBF |
International Rectifier |
MOSFET N-CH 40V 42A DPAK |
Tape & Reel (TR) | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 40V | 42A (Tc) | 5.5 mOhm @ 42A, 10V | 4V @ 250µA | 89nC @ 10V | 2950pF @ 25V | 140W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak |
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FDFMA2N028Z |
Fairchild Semiconductor |
MOSFET N-CH 20V 3.7A MLP2X2 |
Digi-Reel® | PowerTrench® | MOSFET N-Channel, Metal Oxide | Diode (Isolated) | 20V | 3.7A (Ta) | 68 mOhm @ 3.7A, 4.5V | 1.5V @ 250µA | 6nC @ 4.5V | 455pF @ 10V | 700mW | Surface Mount | 6-WDFN Exposed Pad | 6-MicroFET (2x2) |
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IRFH4210TRPBF |
International Rectifier |
MOSF N CH 25V 45A PQFN |
Cut Tape (CT) | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 25V | 45A | 1.35 mOhm @ 50A, 10V | 2.1V @ 100µA | 74nC @ 10V | 4812pF @ 13V | 3.6W | Surface Mount | 8-PowerTDFN | PQFN (5x6) |
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IRFR4104TRPBF |
International Rectifier |
MOSFET N-CH 40V 42A DPAK |
Cut Tape (CT) | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 40V | 42A (Tc) | 5.5 mOhm @ 42A, 10V | 4V @ 250µA | 89nC @ 10V | 2950pF @ 25V | 140W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak |
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FQD4N25TM_WS |
Fairchild Semiconductor |
MOSFET N-CH 250V 3A DPAK |
Tape & Reel (TR) | QFET® | MOSFET N-Channel, Metal Oxide | Standard | 250V | 3A | 1.75 Ohm @ 1.5A, 10V | 5V @ 250µA | 5.6nC @ 10V | 200pF @ 25V | 2.5W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak |
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IRFH4210TRPBF |
International Rectifier |
MOSF N CH 25V 45A PQFN |
Digi-Reel® | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 25V | 45A | 1.35 mOhm @ 50A, 10V | 2.1V @ 100µA | 74nC @ 10V | 4812pF @ 13V | 3.6W | Surface Mount | 8-PowerTDFN | PQFN (5x6) |
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IRFR4104TRPBF |
International Rectifier |
MOSFET N-CH 40V 42A DPAK |
Digi-Reel® | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 40V | 42A (Tc) | 5.5 mOhm @ 42A, 10V | 4V @ 250µA | 89nC @ 10V | 2950pF @ 25V | 140W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak |
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FQD4N25TM_WS |
Fairchild Semiconductor |
MOSFET N-CH 250V 3A DPAK |
Cut Tape (CT) | QFET® | MOSFET N-Channel, Metal Oxide | Standard | 250V | 3A | 1.75 Ohm @ 1.5A, 10V | 5V @ 250µA | 5.6nC @ 10V | 200pF @ 25V | 2.5W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak |
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SI7463DP-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH 40V 11A PPAK 8SOIC |
Tape & Reel (TR) | - | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 40V | 11A (Ta) | 9.2 mOhm @ 18.6A, 10V | 3V @ 250µA | 140nC @ 10V | - | 1.9W | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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SIE868DF-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH D-S 40V POLARPAK |
Tape & Reel (TR) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Standard | 40V | 60A (Tc) | 2.3 mOhm @ 20A, 10V | 2.2V @ 250µA | 145nC @ 10V | 6100pF @ 20V | 125W | Surface Mount | 10-PolarPAK® (L) | 10-PolarPAK® (L) |
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FQD4N25TM_WS |
Fairchild Semiconductor |
MOSFET N-CH 250V 3A DPAK |
Digi-Reel® | QFET® | MOSFET N-Channel, Metal Oxide | Standard | 250V | 3A | 1.75 Ohm @ 1.5A, 10V | 5V @ 250µA | 5.6nC @ 10V | 200pF @ 25V | 2.5W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak |
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SIE868DF-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH D-S 40V POLARPAK |
Cut Tape (CT) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Standard | 40V | 60A (Tc) | 2.3 mOhm @ 20A, 10V | 2.2V @ 250µA | 145nC @ 10V | 6100pF @ 20V | 125W | Surface Mount | 10-PolarPAK® (L) | 10-PolarPAK® (L) |
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SI7463DP-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH 40V 11A PPAK 8SOIC |
Cut Tape (CT) | - | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 40V | 11A (Ta) | 9.2 mOhm @ 18.6A, 10V | 3V @ 250µA | 140nC @ 10V | - | 1.9W | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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SIE868DF-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH D-S 40V POLARPAK |
Digi-Reel® | TrenchFET® | MOSFET N-Channel, Metal Oxide | Standard | 40V | 60A (Tc) | 2.3 mOhm @ 20A, 10V | 2.2V @ 250µA | 145nC @ 10V | 6100pF @ 20V | 125W | Surface Mount | 10-PolarPAK® (L) | 10-PolarPAK® (L) |
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NTMFS4923NET1G |
ON Semiconductor |
MOSFET N-CH 30V 91A SO-8FL |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 12.7A (Ta), 91A (Tc) | 3.3 mOhm @ 30A, 10V | 2V @ 250µA | 22nC @ 4.5V | 4850pF @ 15V | 930mW | Surface Mount | 8-TDFN Exposed Pad (5 Lead) | 6-DFN, 8-SO Flat Lead (5x6) |
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SI7463DP-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH 40V 11A PPAK 8SOIC |
Digi-Reel® | - | MOSFET P-Channel, Metal Oxide | Logic Level Gate | 40V | 11A (Ta) | 9.2 mOhm @ 18.6A, 10V | 3V @ 250µA | 140nC @ 10V | - | 1.9W | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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FDD5670 |
Fairchild Semiconductor |
MOSFET N-CH 60V 52A D-PAK |
Tape & Reel (TR) | PowerTrench® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 60V | 52A | 15 mOhm @ 10A, 10V | 4V @ 250µA | 73nC @ 10V | 2739pF @ 15V | 1.6W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 |
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NTMFS4923NET1G |
ON Semiconductor |
MOSFET N-CH 30V 91A SO-8FL |
Cut Tape (CT) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 12.7A (Ta), 91A (Tc) | 3.3 mOhm @ 30A, 10V | 2V @ 250µA | 22nC @ 4.5V | 4850pF @ 15V | 930mW | Surface Mount | 8-TDFN Exposed Pad (5 Lead) | 6-DFN, 8-SO Flat Lead (5x6) |
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IRFP150NPBF |
International Rectifier |
MOSFET N-CH 100V 42A TO-247AC |
Bulk | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 100V | 42A (Tc) | 36 mOhm @ 23A, 10V | 4V @ 250µA | 110nC @ 10V | 1900pF @ 25V | 160W | Through Hole | TO-247-3 | TO-247AC |
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NTMFS4923NET1G |
ON Semiconductor |
MOSFET N-CH 30V 91A SO-8FL |
Digi-Reel® | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 12.7A (Ta), 91A (Tc) | 3.3 mOhm @ 30A, 10V | 2V @ 250µA | 22nC @ 4.5V | 4850pF @ 15V | 930mW | Surface Mount | 8-TDFN Exposed Pad (5 Lead) | 6-DFN, 8-SO Flat Lead (5x6) |
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FDD5670 |
Fairchild Semiconductor |
MOSFET N-CH 60V 52A D-PAK |
Cut Tape (CT) | PowerTrench® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 60V | 52A | 15 mOhm @ 10A, 10V | 4V @ 250µA | 73nC @ 10V | 2739pF @ 15V | 1.6W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 |
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IRFI540GPBF |
Vishay Siliconix |
MOSFET N-CH 100V 17A TO220FP |
Tube | - | MOSFET N-Channel, Metal Oxide | Standard | 100V | 17A (Tc) | 77 mOhm @ 10A, 10V | 4V @ 250µA | 72nC @ 10V | 1700pF @ 25V | 48W | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 |
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FDD5670 |
Fairchild Semiconductor |
MOSFET N-CH 60V 52A D-PAK |
Digi-Reel® | PowerTrench® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 60V | 52A | 15 mOhm @ 10A, 10V | 4V @ 250µA | 73nC @ 10V | 2739pF @ 15V | 1.6W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 |
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SPD50N03S2-07 G |
Infineon Technologies |
MOSFET N-CH 30V 50A TO252-3 |
Tape & Reel (TR) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 30V | 50A | 7.3 mOhm @ 50A, 10V | 4V @ 85µA | 46.5nC @ 10V | 2170pF @ 25V | 136W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 |
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IRLS4030TRLPBF |
International Rectifier |
MOSFET N-CH 100V 180A D2PAK |
Tape & Reel (TR) | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 100V | 180A (Tc) | 4.3 mOhm @ 110A, 10V | 2.5V @ 250µA | 130nC @ 4.5V | 11360pF @ 50V | 370W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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STU5N95K3 |
STMicroelectronics |
MOSFET N-CH 950V 4A IPAK |
Tube | SuperMESH3™ | MOSFET N-Channel, Metal Oxide | Standard | 950V | 4A (Tc) | 3.5 Ohm @ 2A, 10V | 5V @ 100µA | 19nC @ 10V | 460pF @ 25V | 90W | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-Pak |
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SPD50N03S2-07 G |
Infineon Technologies |
MOSFET N-CH 30V 50A TO252-3 |
Cut Tape (CT) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 30V | 50A | 7.3 mOhm @ 50A, 10V | 4V @ 85µA | 46.5nC @ 10V | 2170pF @ 25V | 136W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 |
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IRLS4030TRLPBF |
International Rectifier |
MOSFET N-CH 100V 180A D2PAK |
Cut Tape (CT) | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 100V | 180A (Tc) | 4.3 mOhm @ 110A, 10V | 2.5V @ 250µA | 130nC @ 4.5V | 11360pF @ 50V | 370W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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STP11NM50N |
STMicroelectronics |
MOSFET N-CH 500V 9A TO-220 |
Tube | MDmesh™ II | MOSFET N-Channel, Metal Oxide | Standard | 500V | 8.5A (Tc) | 470 mOhm @ 4.5A, 10V | 4V @ 250µA | 19nC @ 10V | 547pF @ 50V | 70W | Through Hole | TO-220-3 | TO-220AB |
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SPD50N03S2-07 G |
Infineon Technologies |
MOSFET N-CH 30V 50A TO252-3 |
Digi-Reel® | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 30V | 50A | 7.3 mOhm @ 50A, 10V | 4V @ 85µA | 46.5nC @ 10V | 2170pF @ 25V | 136W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 |
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IRLS4030TRLPBF |
International Rectifier |
MOSFET N-CH 100V 180A D2PAK |
Digi-Reel® | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 100V | 180A (Tc) | 4.3 mOhm @ 110A, 10V | 2.5V @ 250µA | 130nC @ 4.5V | 11360pF @ 50V | 370W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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FDD2670 |
Fairchild Semiconductor |
MOSFET N-CH 200V 3.6A D-PAK |
Tape & Reel (TR) | PowerTrench® | MOSFET N-Channel, Metal Oxide | Standard | 200V | 3.6A | 130 mOhm @ 3.6A, 10V | 4.5V @ 250µA | 43nC @ 10V | 1228pF @ 100V | 1.3W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 |
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BUK7613-100E,118 |
NXP Semiconductors |
MOSFET N-CH 100V 72A D2PAK |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 100V | 72A (Ta) | 13 mOhm @ 20A, 10V | 4V @ 1mA | 97.2nC @ 10V | 4533pF @ 20V | 182W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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IRF3007SPBF |
International Rectifier |
MOSFET N-CH 75V 62A D2PAK |
Tube | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 75V | 62A (Tc) | 12.6 mOhm @ 48A, 10V | 4V @ 250µA | 130nC @ 10V | 3270pF @ 25V | 120W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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BUK7613-100E,118 |
NXP Semiconductors |
MOSFET N-CH 100V 72A D2PAK |
Cut Tape (CT) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 100V | 72A (Ta) | 13 mOhm @ 20A, 10V | 4V @ 1mA | 97.2nC @ 10V | 4533pF @ 20V | 182W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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FDD2670 |
Fairchild Semiconductor |
MOSFET N-CH 200V 3.6A D-PAK |
Cut Tape (CT) | PowerTrench® | MOSFET N-Channel, Metal Oxide | Standard | 200V | 3.6A | 130 mOhm @ 3.6A, 10V | 4.5V @ 250µA | 43nC @ 10V | 1228pF @ 100V | 1.3W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 |
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FDP19N40 |
Fairchild Semiconductor |
MOSFET N-CH 400V 19A TO-220 |
Tube | UniFET™ | MOSFET N-Channel, Metal Oxide | Standard | 400V | 19A (Tc) | 240 mOhm @ 9.5A, 10V | 5V @ 250µA | 40nC @ 10V | 2115pF @ 25V | 215W | Through Hole | TO-220-3 | TO-220 |
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FDD2670 |
Fairchild Semiconductor |
MOSFET N-CH 200V 3.6A D-PAK |
Digi-Reel® | PowerTrench® | MOSFET N-Channel, Metal Oxide | Standard | 200V | 3.6A | 130 mOhm @ 3.6A, 10V | 4.5V @ 250µA | 43nC @ 10V | 1228pF @ 100V | 1.3W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 |
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BUK7613-100E,118 |
NXP Semiconductors |
MOSFET N-CH 100V 72A D2PAK |
Digi-Reel® | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 100V | 72A (Ta) | 13 mOhm @ 20A, 10V | 4V @ 1mA | 97.2nC @ 10V | 4533pF @ 20V | 182W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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FDPF20N50 |
Fairchild Semiconductor |
MOSFET N-CH 500V 20A TO-220F |
Tube | UniFET™ | MOSFET N-Channel, Metal Oxide | Standard | 500V | 20A (Tc) | 230 mOhm @ 10A, 10V | 5V @ 250µA | 59.5nC @ 10V | 3120pF @ 25V | 38.5W | Through Hole | TO-220-3 Full Pack | TO-220F |
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FDP070AN06A0 |
Fairchild Semiconductor |
MOSFET N-CH 60V 80A TO-220AB |
Tube | PowerTrench® | MOSFET N-Channel, Metal Oxide | Standard | 60V | 15A (Ta), 80A (Tc) | 7 mOhm @ 80A, 10V | 4V @ 250µA | 66nC @ 10V | 3000pF @ 25V | 175W | Through Hole | TO-220-3 | TO-220AB |
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BUK964R1-40E,118 |
NXP Semiconductors |
MOSFET N-CH 40V 75A D2PAK |
Tape & Reel (TR) | TrenchMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 40V | 75A (Ta) | 3.5 mOhm @ 25A, 10V | 2.1V @ 1mA | 52.1nC @ 5V | 6650pF @ 25V | 182W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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BSC028N06NS |
Infineon Technologies |
MOSFET N-CH 60V 23A TDSON-8 |
Tape & Reel (TR) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 60V | 23A (Ta), 100A (Tc) | 2.8 mOhm @ 50A, 10V | 2.8V @ 50µA | 37nC @ 10V | 2700pF @ 30V | 2.5W | Surface Mount | 8-PowerTDFN | PG-TDSON-8 |
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SUM90N08-6M2P-E3 |
Vishay Siliconix |
MOSFET N-CH D-S 75V D2PAK |
Tape & Reel (TR) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Standard | 75V | 90A (Tc) | 6.2 mOhm @ 20A, 10V | 4.5V @ 250µA | 115nC @ 10V | 4620pF @ 30V | 3.75W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) |
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BUK964R1-40E,118 |
NXP Semiconductors |
MOSFET N-CH 40V 75A D2PAK |
Cut Tape (CT) | TrenchMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 40V | 75A (Ta) | 3.5 mOhm @ 25A, 10V | 2.1V @ 1mA | 52.1nC @ 5V | 6650pF @ 25V | 182W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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BSC028N06NS |
Infineon Technologies |
MOSFET N-CH 60V 23A TDSON-8 |
Cut Tape (CT) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 60V | 23A (Ta), 100A (Tc) | 2.8 mOhm @ 50A, 10V | 2.8V @ 50µA | 37nC @ 10V | 2700pF @ 30V | 2.5W | Surface Mount | 8-PowerTDFN | PG-TDSON-8 |
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SUM90N08-6M2P-E3 |
Vishay Siliconix |
MOSFET N-CH D-S 75V D2PAK |
Cut Tape (CT) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Standard | 75V | 90A (Tc) | 6.2 mOhm @ 20A, 10V | 4.5V @ 250µA | 115nC @ 10V | 4620pF @ 30V | 3.75W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) |
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BUK964R1-40E,118 |
NXP Semiconductors |
MOSFET N-CH 40V 75A D2PAK |
Digi-Reel® | TrenchMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 40V | 75A (Ta) | 3.5 mOhm @ 25A, 10V | 2.1V @ 1mA | 52.1nC @ 5V | 6650pF @ 25V | 182W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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BSC028N06NS |
Infineon Technologies |
MOSFET N-CH 60V 23A TDSON-8 |
Digi-Reel® | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 60V | 23A (Ta), 100A (Tc) | 2.8 mOhm @ 50A, 10V | 2.8V @ 50µA | 37nC @ 10V | 2700pF @ 30V | 2.5W | Surface Mount | 8-PowerTDFN | PG-TDSON-8 |
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SUM90N08-6M2P-E3 |
Vishay Siliconix |
MOSFET N-CH D-S 75V D2PAK |
Digi-Reel® | TrenchFET® | MOSFET N-Channel, Metal Oxide | Standard | 75V | 90A (Tc) | 6.2 mOhm @ 20A, 10V | 4.5V @ 250µA | 115nC @ 10V | 4620pF @ 30V | 3.75W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) |
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IRF2807ZPBF |
International Rectifier |
MOSFET N-CH 75V 75A TO-220AB |
Tube | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 75V | 75A (Tc) | 9.4 mOhm @ 53A, 10V | 4V @ 250µA | 110nC @ 10V | 3270pF @ 25V | 170W | Through Hole | TO-220-3 | TO-220AB |
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2SK303100L |
Panasonic Electronic Components - Semiconductor Products |
MOSFET N-CH 100V 15A UG-1 |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Standard | 100V | 15A (Tc) | 135 mOhm @ 8A, 10V | 2.5V @ 1mA | - | 300pF @ 10V | 20W | Surface Mount | U-G1 | U-G1 |
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STU10NM60N |
STMicroelectronics |
MOSFET N-CH 600V 10A IPAK |
Tube | MDmesh™ II | MOSFET N-Channel, Metal Oxide | Standard | 600V | 10A (Tc) | 550 mOhm @ 4A, 10V | 4V @ 250µA | 19nC @ 10V | 540pF @ 50V | 70W | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-Pak |
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2SK303100L |
Panasonic Electronic Components - Semiconductor Products |
MOSFET N-CH 100V 15A UG-1 |
Cut Tape (CT) | - | MOSFET N-Channel, Metal Oxide | Standard | 100V | 15A (Tc) | 135 mOhm @ 8A, 10V | 2.5V @ 1mA | - | 300pF @ 10V | 20W | Surface Mount | U-G1 | U-G1 |
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IRF9530STRLPBF |
Vishay Siliconix |
MOSFET P-CH 100V 12A D2PAK |
Tape & Reel (TR) | - | MOSFET P-Channel, Metal Oxide | Standard | 100V | 12A | 300 mOhm @ 7.2A, 10V | 4V @ 250µA | 38nC @ 10V | 860pF @ 25V | 3.7W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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IRFH4210DTRPBF |
International Rectifier |
MOSF N CH 25V 44A PQFN |
Tape & Reel (TR) | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 25V | 44A | 1.10 mOhm @ 50A, 10V | 2.1V @ 100µA | 77nC @ 10V | 4812pF @ 13V | 3.5W | Surface Mount | 8-PowerTDFN | PQFN (5x6) |
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2SK303100L |
Panasonic Electronic Components - Semiconductor Products |
MOSFET N-CH 100V 15A UG-1 |
Digi-Reel® | - | MOSFET N-Channel, Metal Oxide | Standard | 100V | 15A (Tc) | 135 mOhm @ 8A, 10V | 2.5V @ 1mA | - | 300pF @ 10V | 20W | Surface Mount | U-G1 | U-G1 |
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IRF9530STRLPBF |
Vishay Siliconix |
MOSFET P-CH 100V 12A D2PAK |
Cut Tape (CT) | - | MOSFET P-Channel, Metal Oxide | Standard | 100V | 12A | 300 mOhm @ 7.2A, 10V | 4V @ 250µA | 38nC @ 10V | 860pF @ 25V | 3.7W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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IRFH4210DTRPBF |
International Rectifier |
MOSF N CH 25V 44A PQFN |
Cut Tape (CT) | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 25V | 44A | 1.10 mOhm @ 50A, 10V | 2.1V @ 100µA | 77nC @ 10V | 4812pF @ 13V | 3.5W | Surface Mount | 8-PowerTDFN | PQFN (5x6) |
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IRF9530STRLPBF |
Vishay Siliconix |
MOSFET P-CH 100V 12A D2PAK |
Digi-Reel® | - | MOSFET P-Channel, Metal Oxide | Standard | 100V | 12A | 300 mOhm @ 7.2A, 10V | 4V @ 250µA | 38nC @ 10V | 860pF @ 25V | 3.7W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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IRFHM8326TRPBF |
International Rectifier |
MOSFET N-CH 30V 25A PQFN |
Tape & Reel (TR) | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 30V | 19A | 4.7 mOhm @ 20A, 10V | 2.2V @ 50µA | 39nC @ 10V | 2496pF @ 10V | 2.8W | Surface Mount | 8-PowerTDFN | * |
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IRFH4210DTRPBF |
International Rectifier |
MOSF N CH 25V 44A PQFN |
Digi-Reel® | HEXFET® | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 25V | 44A | 1.10 mOhm @ 50A, 10V | 2.1V @ 100µA | 77nC @ 10V | 4812pF @ 13V | 3.5W | Surface Mount | 8-PowerTDFN | PQFN (5x6) |
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IRFHM8326TRPBF |
International Rectifier |
MOSFET N-CH 30V 25A PQFN |
Cut Tape (CT) | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 30V | 19A | 4.7 mOhm @ 20A, 10V | 2.2V @ 50µA | 39nC @ 10V | 2496pF @ 10V | 2.8W | Surface Mount | 8-PowerTDFN | * |
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SPB17N80C3 |
Infineon Technologies |
MOSFET N-CH 800V 17A D2PAK |
Tape & Reel (TR) | CoolMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 800V | 17A (Tc) | 290 mOhm @ 11A, 10V | 3.9V @ 1mA | 177nC @ 10V | 2300pF @ 100V | 227W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | P-TO263-3 |
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STP10NM60N |
STMicroelectronics |
MOSFET N-CH 600V 8A TO220 |
Tube | MDmesh™ II | MOSFET N-Channel, Metal Oxide | Standard | 600V | 10A (Tc) | 550 mOhm @ 4A, 10V | 4V @ 250µA | 19nC @ 10V | 540pF @ 50V | 70W | Through Hole | TO-220-3 | TO-220AB |
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IRFHM8326TRPBF |
International Rectifier |
MOSFET N-CH 30V 25A PQFN |
Digi-Reel® | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 30V | 19A | 4.7 mOhm @ 20A, 10V | 2.2V @ 50µA | 39nC @ 10V | 2496pF @ 10V | 2.8W | Surface Mount | 8-PowerTDFN | * |
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SPB17N80C3 |
Infineon Technologies |
MOSFET N-CH 800V 17A D2PAK |
Cut Tape (CT) | CoolMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 800V | 17A (Tc) | 290 mOhm @ 11A, 10V | 3.9V @ 1mA | 177nC @ 10V | 2300pF @ 100V | 227W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | P-TO263-3 |
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IPA60R280C6 |
Infineon Technologies |
MOSFET N-CH 600V 13.8A TO220-FP |
Tube | CoolMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 600V | 13.8A (Tc) | 280 mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43nC @ 10V | 950pF @ 100V | 32W | Through Hole | TO-220-3 Full Pack | PG-TO-220-FP |
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SPB17N80C3 |
Infineon Technologies |
MOSFET N-CH 800V 17A D2PAK |
Digi-Reel® | CoolMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 800V | 17A (Tc) | 290 mOhm @ 11A, 10V | 3.9V @ 1mA | 177nC @ 10V | 2300pF @ 100V | 227W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | P-TO263-3 |
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CSD16414Q5 |
Texas Instruments |
MOSFET N-CH 25V 100A 8-SON |
Tape & Reel (TR) | NexFET™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 25V | 34A (Ta), 100A (Tc) | 1.9 mOhm @ 30A, 10V | 2V @ 250µA | 21nC @ 4.5V | 3650pF @ 12.5V | 3.2W | Surface Mount | 8-TDFN Exposed Pad | 8-SON |
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IPI076N12N3 G |
Infineon Technologies |
MOSFET N-CH 120V 100A TO262-3 |
Tube | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 120V | 100A (Tc) | 7.6 mOhm @ 100A, 10V | 4V @ 130µA | 101nC @ 10V | 6640pF @ 60V | 188W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 |
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IPB025N08N3 G |
Infineon Technologies |
MOSFET N-CH 80V 120A TO263-3 |
Tape & Reel (TR) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 80V | 120A | 2.5 mOhm @ 100A, 10V | 3.5V @ 270µA | 206nC @ 10V | 14200pF @ 40V | 300W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 |
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CSD16414Q5 |
Texas Instruments |
MOSFET N-CH 25V 100A 8-SON |
Cut Tape (CT) | NexFET™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 25V | 34A (Ta), 100A (Tc) | 1.9 mOhm @ 30A, 10V | 2V @ 250µA | 21nC @ 4.5V | 3650pF @ 12.5V | 3.2W | Surface Mount | 8-TDFN Exposed Pad | 8-SON |
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BUK7E1R8-40E,127 |
NXP Semiconductors |
MOSFET N-CH 40V 120A I2PAK |
Tube | TrenchMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 40V | 120A (Ta) | 1.8 mOhm @ 25A, 10V | 4V @ 1mA | 145nC @ 10V | 11340pF @ 25V | 349W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK |
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IPB025N08N3 G |
Infineon Technologies |
MOSFET N-CH 80V 120A TO263-3 |
Cut Tape (CT) | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 80V | 120A | 2.5 mOhm @ 100A, 10V | 3.5V @ 270µA | 206nC @ 10V | 14200pF @ 40V | 300W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 |
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CSD16414Q5 |
Texas Instruments |
MOSFET N-CH 25V 100A 8-SON |
Digi-Reel® | NexFET™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 25V | 34A (Ta), 100A (Tc) | 1.9 mOhm @ 30A, 10V | 2V @ 250µA | 21nC @ 4.5V | 3650pF @ 12.5V | 3.2W | Surface Mount | 8-TDFN Exposed Pad | 8-SON |
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BUK7E2R6-60E,127 |
NXP Semiconductors |
MOSFET N-CH 60V 120A I2PAK |
Tube | TrenchMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 60V | 120A (Ta) | 2.6 mOhm @ 25A, 10V | 4V @ 1mA | 158nC @ 10V | 11180pF @ 25V | 349W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK |
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IPB025N08N3 G |
Infineon Technologies |
MOSFET N-CH 80V 120A TO263-3 |
Digi-Reel® | OptiMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 80V | 120A | 2.5 mOhm @ 100A, 10V | 3.5V @ 270µA | 206nC @ 10V | 14200pF @ 40V | 300W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 |
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NTTFS4985NFTAG |
ON Semiconductor |
MOSFET N-CH 30V 16.3A 8-WDFN |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Standard | 30V | 16.3A (Ta), 64A (Tc) | 3.5 mOhm @ 20A, 10V | 2.3V @ 250µA | 29.4nC @ 10V | 2075pF @ 15V | 1.47W | Surface Mount | 8-WDFN Exposed Pad | 8-WDFN (3.3x3.3) |
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BUK9E2R8-60E,127 |
NXP Semiconductors |
MOSFET N-CH 60V 120A I2PAK |
Tube | TrenchMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 60V | 120A (Ta) | 2.6 mOhm @ 25A, 10V | 2.1V @ 1mA | 120nC @ 5V | 17450pF @ 25V | 349W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK |
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BUK7506-55A,127 |
NXP Semiconductors |
MOSFET N-CH 55V 75A TO220AB |
Tube | TrenchMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 55V | 75A | 6.3 mOhm @ 25A, 10V | 4V @ 1mA | - | 6000pF @ 25V | 300W | Through Hole | TO-220-3 | TO-220AB |
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NTTFS4985NFTAG |
ON Semiconductor |
MOSFET N-CH 30V 16.3A 8-WDFN |
Cut Tape (CT) | - | MOSFET N-Channel, Metal Oxide | Standard | 30V | 16.3A (Ta), 64A (Tc) | 3.5 mOhm @ 20A, 10V | 2.3V @ 250µA | 29.4nC @ 10V | 2075pF @ 15V | 1.47W | Surface Mount | 8-WDFN Exposed Pad | 8-WDFN (3.3x3.3) |
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BUK751R8-40E,127 |
NXP Semiconductors |
MOSFET N-CH 40V 120A TO220AB |
Tube | TrenchMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 40V | 120A (Ta) | 1.8 mOhm @ 25A, 10V | 4V @ 1mA | 145nC @ 10V | 11340pF @ 25V | 349W | Through Hole | TO-220-3 | TO-220AB |
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SIR838DP-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 150V 8-SOIC |
Tape & Reel (TR) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Standard | 150V | 35A (Tc) | 33 mOhm @ 8.3A, 10V | 4V @ 250µA | 50nC @ 10V | 2075pF @ 75V | 96W | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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NTTFS4985NFTAG |
ON Semiconductor |
MOSFET N-CH 30V 16.3A 8-WDFN |
Digi-Reel® | - | MOSFET N-Channel, Metal Oxide | Standard | 30V | 16.3A (Ta), 64A (Tc) | 3.5 mOhm @ 20A, 10V | 2.3V @ 250µA | 29.4nC @ 10V | 2075pF @ 15V | 1.47W | Surface Mount | 8-WDFN Exposed Pad | 8-WDFN (3.3x3.3) |
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BUK952R8-60E,127 |
NXP Semiconductors |
MOSFET N-CH 60V 120A TO220AB |
Tube | TrenchMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 60V | 120A (Ta) | 2.6 mOhm @ 25A, 10V | 2.1V @ 1mA | 120nC @ 5V | 17450pF @ 25V | 349W | Through Hole | TO-220-3 | TO-220AB |
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SIR838DP-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 150V 8-SOIC |
Cut Tape (CT) | TrenchFET® | MOSFET N-Channel, Metal Oxide | Standard | 150V | 35A (Tc) | 33 mOhm @ 8.3A, 10V | 4V @ 250µA | 50nC @ 10V | 2075pF @ 75V | 96W | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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BUK9605-30A,118 |
NXP Semiconductors |
MOSFET N-CH 30V 75A D2PAK |
Cut Tape (CT) | TrenchMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 75A | 4.6 mOhm @ 25A, 10V | 2V @ 1mA | - | 8600pF @ 25V | 230W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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TPCA8026(TE12L,Q,M |
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 45A 8-SOP ADV |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 45A (Ta) | 2.2 mOhm @ 23A, 10V | 2.5V @ 1mA | 113nC @ 10V | 4200pF @ 10V | 45W | Surface Mount | 8-PowerVDFN | 8-SOP Advance |
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BUK9605-30A,118 |
NXP Semiconductors |
MOSFET N-CH 30V 75A D2PAK |
Digi-Reel® | TrenchMOS™ | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 75A | 4.6 mOhm @ 25A, 10V | 2V @ 1mA | - | 8600pF @ 25V | 230W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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SIR838DP-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 150V 8-SOIC |
Digi-Reel® | TrenchFET® | MOSFET N-Channel, Metal Oxide | Standard | 150V | 35A (Tc) | 33 mOhm @ 8.3A, 10V | 4V @ 250µA | 50nC @ 10V | 2075pF @ 75V | 96W | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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TPCA8026(TE12L,Q,M |
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 45A 8-SOP ADV |
Cut Tape (CT) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 45A (Ta) | 2.2 mOhm @ 23A, 10V | 2.5V @ 1mA | 113nC @ 10V | 4200pF @ 10V | 45W | Surface Mount | 8-PowerVDFN | 8-SOP Advance |
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TPCA8026(TE12L,Q,M |
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 45A 8-SOP ADV |
Digi-Reel® | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 45A (Ta) | 2.2 mOhm @ 23A, 10V | 2.5V @ 1mA | 113nC @ 10V | 4200pF @ 10V | 45W | Surface Mount | 8-PowerVDFN | 8-SOP Advance |
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STF5N95K3 |
STMicroelectronics |
MOSFET N-CH 950V 4A TO220FP |
Tube | SuperMESH3™ | MOSFET N-Channel, Metal Oxide | Standard | 950V | 4A (Tc) | 3.5 Ohm @ 2A, 10V | 5V @ 100µA | 19nC @ 10V | 460pF @ 25V | 25W | Through Hole | TO-220-3 Full Pack | TO-220FP |
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IXFP12N50P |
IXYS |
MOSFET N-CH 500V 12A TO-220 |
Tube | Polar™ HiPerFET™ | MOSFET N-Channel, Metal Oxide | Standard | 500V | 12A (Tc) | 500 mOhm @ 6A, 10V | 5.5V @ 1mA | 29nC @ 10V | 1830pF @ 25V | 200W | Through Hole | TO-220-3 | TO-220AB |
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ATP202-TL-H |
ON Semiconductor |
MOSFET N-CH 30V 50A ATPAK |
Tape & Reel (TR) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 50A (Ta) | 12 mOhm @ 25A, 10V | - | 27nC @ 10V | 1650pF @ 10V | 40W | Surface Mount | ATPAK (2 leads+tab) | ATPAK |
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BUK763R1-40B,118 |
NXP Semiconductors |
MOSFET N-CH 40V 75A D2PAK |
Cut Tape (CT) | TrenchMOS™ | MOSFET N-Channel, Metal Oxide | Standard | 40V | 75A (Tc) | 3.1 mOhm @ 25A, 10V | 4V @ 1mA | 94nC @ 10V | 6808pF @ 25V | 300W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK |
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IRFP250NPBF |
International Rectifier |
MOSFET N-CH 200V 30A TO-247AC |
Bulk | HEXFET® | MOSFET N-Channel, Metal Oxide | Standard | 200V | 30A (Tc) | 75 mOhm @ 18A, 10V | 4V @ 250µA | 123nC @ 10V | 2159pF @ 25V | 214W | Through Hole | TO-247-3 | TO-247AC |
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ATP202-TL-H |
ON Semiconductor |
MOSFET N-CH 30V 50A ATPAK |
Cut Tape (CT) | - | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 30V | 50A (Ta) | 12 mOhm @ 25A, 10V | - | 27nC @ 10V | 1650pF @ 10V | 40W | Surface Mount | ATPAK (2 leads+tab) | ATPAK |