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JFETs (Junction Field Effect)
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2N5639G
2N5639G
Description:
JFET N-CH 35V 310MW TO92
Manufacturer:
ON Semiconductor
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2N5639G
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2N5639G
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Product Information
Category
JFETs (Junction Field Effect)
Packaging
Bulk
Series
-
FET Type
N-Channel
Voltage - Breakdown (V(BR)GSS)
35V
Drain to Source Voltage (Vdss)
30V
Current - Drain (Idss) @ Vds (Vgs=0)
25mA @ 20V
Current Drain (Id) - Max
-
Voltage - Cutoff (VGS off) @ Id
-
Input Capacitance (Ciss) @ Vds
10pF @ 12V (VGS)
Resistance - RDS(On)
60 Ohm
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
Power - Max
310mW
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