2SK3666-2-TB-E
- Description：
- JFET N-CH 10MA 200MW CP
- Manufacturer：
- ON Semiconductor
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Product Information
- Category
- JFETs (Junction Field Effect)
- Packaging
- Tape & Reel (TR)
- Series
- -
- FET Type
- N-Channel
- Voltage - Breakdown (V(BR)GSS)
- -
- Drain to Source Voltage (Vdss)
- 30V
- Current - Drain (Idss) @ Vds (Vgs=0)
- 600µA @ 10V
- Current Drain (Id) - Max
- 10mA
- Voltage - Cutoff (VGS off) @ Id
- 180mV @ 1µA
- Input Capacitance (Ciss) @ Vds
- 4pF @ 10V
- Resistance - RDS(On)
- 200 Ohm
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package
- 3-CP
- Power - Max
- 200mW
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