IPD65R1K4CFDBTMA1
- Description：
- MOSFET N-CH 650V 2.8A TO-252
- Manufacturer：
- Infineon Technologies
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- CoolMOS™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 650V
- Current - Continuous Drain (Id) @ 25°C
- 2.8A (Tc)
- Rds On (Max) @ Id, Vgs
- 1.4 Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id
- 4.5V @ 100µA
- Gate Charge (Qg) @ Vgs
- 10nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 262pF @ 100V
- Power - Max
- 28.4W
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package
- PG-TO252
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