SPB10N10L G
- Description：
- MOSFET N-CH 100V 10.3A TO-263
- Manufacturer：
- Infineon Technologies
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- SIPMOS®
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 100V
- Current - Continuous Drain (Id) @ 25°C
- 10.3A (Tc)
- Rds On (Max) @ Id, Vgs
- 154 mOhm @ 8.1A, 10V
- Vgs(th) (Max) @ Id
- 2V @ 21µA
- Gate Charge (Qg) @ Vgs
- 22nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 444pF @ 25V
- Power - Max
- 50W
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package
- P-TO263-3
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