IXTH200N10T
- Description：
- MOSFET N-CH 100V 200A TO-247
- Manufacturer：
- IXYS
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Product Information
- Category
- FETs - Single
- Packaging
- Tube
- Series
- TrenchMV™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 100V
- Current - Continuous Drain (Id) @ 25°C
- 200A (Tc)
- Rds On (Max) @ Id, Vgs
- 5.5 mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id
- 4.5V @ 250µA
- Gate Charge (Qg) @ Vgs
- 152nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 9400pF @ 25V
- Power - Max
- 550W
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Supplier Device Package
- TO-247 (IXTH)
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