SI2365EDS-T1-GE3
- Description：
- MOSFET P-CHAN 20V D-S TO-236
- Manufacturer：
- Vishay Siliconix
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Product Information
- Category
- FETs - Single
- Packaging
- Tape & Reel (TR)
- Series
- TrenchFET®
- FET Type
- MOSFET P-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 4.5A (Ta), 5.9A (Tc)
- Rds On (Max) @ Id, Vgs
- 32 mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Gate Charge (Qg) @ Vgs
- 36nC @ 8V
- Input Capacitance (Ciss) @ Vds
- -
- Power - Max
- 1.7W
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package
- TO-236
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