IPB65R225C7ATMA1
- Description：
- MOSFET N-CH 650V 11A TO-263-3
- Manufacturer：
- Infineon Technologies
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Product Information
- Category
- FETs - Single
- Packaging
- Tape & Reel (TR)
- Series
- CoolMOS™ C7
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 650V
- Current - Continuous Drain (Id) @ 25°C
- 11A (Tc)
- Rds On (Max) @ Id, Vgs
- 225 mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 240µA
- Gate Charge (Qg) @ Vgs
- 20nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 996pF @ 400V
- Power - Max
- 63W
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package
- PG-TO263
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