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BUK662R5-30C,118

Description:
MOSFET N-CH TRENCH D2PACK
Manufacturer:
NXP Semiconductors
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BUK662R5-30C,118

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
TrenchMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
100A
Rds On (Max) @ Id, Vgs
2.8 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.8V @ 1mA
Gate Charge (Qg) @ Vgs
114nC @ 10V
Input Capacitance (Ciss) @ Vds
6960pF @ 25V
Power - Max
204W
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
D2PAK

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