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BSZ086P03NS3E G

Description:
MOSFET P-CH 30V 40A TSDSON-8
Manufacturer:
Infineon Technologies
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BSZ086P03NS3E G

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
OptiMOS™
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
40A
Rds On (Max) @ Id, Vgs
8.6 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
1.9V @ 105µA
Gate Charge (Qg) @ Vgs
57.5nC @ 10V
Input Capacitance (Ciss) @ Vds
4785pF @ 15V
Power - Max
69W
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
PG-TSDSON-8 (3.3x3.3)

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