TPCC8002-H(TE12L,Q
- Description：
- MOSFET N-CH 30V 22A 8TSON
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- -
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 22A (Ta)
- Rds On (Max) @ Id, Vgs
- 8.3 mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Gate Charge (Qg) @ Vgs
- 27nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 2500pF @ 10V
- Power - Max
- 30W
- Mounting Type
- Surface Mount
- Package / Case
- 8-VDFN Exposed Pad
- Supplier Device Package
- 8-TSON
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