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PMXB120EPE

Description:
MOSFET P-CH 30V 2.4A 3DFN
Manufacturer:
NXP Semiconductors
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PMXB120EPE

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
Trench™
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
2.4A (Ta)
Rds On (Max) @ Id, Vgs
120 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) @ Vgs
11nC @ 10V
Input Capacitance (Ciss) @ Vds
309pF @ 15V
Power - Max
400mW
Mounting Type
Surface Mount
Package / Case
3-XFDFN Exposed Pad
Supplier Device Package
3-DFN (1.1x1)

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