BUK9Y15-100E,115
- Description：
- MOSFET N-CH 100V LFPAK
- Manufacturer：
- NXP Semiconductors
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Product Information
- Category
- FETs - Single
- Packaging
- Tape & Reel (TR)
- Series
- TrenchMOS™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 100V
- Current - Continuous Drain (Id) @ 25°C
- 69A (Ta)
- Rds On (Max) @ Id, Vgs
- 14.7 mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id
- 2.1V @ 1mA
- Gate Charge (Qg) @ Vgs
- 45.8nC @ 5V
- Input Capacitance (Ciss) @ Vds
- 6139pF @ 25V
- Power - Max
- 195W
- Mounting Type
- Surface Mount
- Package / Case
- SC-100, SOT-669, 4-LFPAK
- Supplier Device Package
- LFPAK56, Power-SO8
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