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DMG3415UFY4-7

Description:
MOSFET P-CH 16V 2.5A DFN-3
Manufacturer:
Diodes Incorporated
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DMG3415UFY4-7

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
-
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
16V
Current - Continuous Drain (Id) @ 25°C
2.5A (Ta)
Rds On (Max) @ Id, Vgs
39 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) @ Vgs
10nC @ 4.5V
Input Capacitance (Ciss) @ Vds
281.9pF @ 10V
Power - Max
490mW
Mounting Type
Surface Mount
Package / Case
3-XFDFN
Supplier Device Package
DFN2015H4-3

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