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IPB027N10N3 G

Description:
MOSFET N-CH 100V 120A TO263-3
Manufacturer:
Infineon Technologies
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IPB027N10N3 G

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
OptiMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
120A
Rds On (Max) @ Id, Vgs
2.7 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.5V @ 275µA
Gate Charge (Qg) @ Vgs
206nC @ 10V
Input Capacitance (Ciss) @ Vds
14800pF @ 50V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
PG-TO263-2

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