RN1427TE85LF
- Description：
- TRANS PREBIAS NPN 200MW SMINI
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Packaging
- Tape & Reel (TR)
- Series
- -
- Transistor Type
- NPN - Pre-Biased
- Current - Collector (Ic) (Max)
- 800mA
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Resistor - Base (R1) (Ohms)
- 2.2k
- Resistor - Emitter Base (R2) (Ohms)
- 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 90 @ 100mA, 1V
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 2mA, 50mA
- Current - Collector Cutoff (Max)
- 500nA
- Frequency - Transition
- 300MHz
- Power - Max
- 200mW
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package
- S-Mini
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