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RN1425TE85LF

Description:
TRANS PREBIAS NPN 200MW SMINI
Manufacturer:
Toshiba Semiconductor and Storage
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RN1425TE85LF

Product Information

Category
Transistors (BJT) - Single, Pre-Biased
Packaging
Tape & Reel (TR)
Series
-
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
800mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1) (Ohms)
470
Resistor - Emitter Base (R2) (Ohms)
10k
DC Current Gain (hFE) (Min) @ Ic, Vce
90 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic
250mV @ 2mA, 50mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
300MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
S-Mini

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