UNR42160RA
- Description：
- TRANS PREBIAS NPN 300MW NS-B1
- Manufacturer：
- Panasonic Electronic Components - Semiconductor Products
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Product Information
- Packaging
- Tape & Box (TB)
- Series
- -
- Transistor Type
- NPN - Pre-Biased
- Current - Collector (Ic) (Max)
- 100mA
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Resistor - Base (R1) (Ohms)
- 4.7k
- Resistor - Emitter Base (R2) (Ohms)
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)
- 500nA
- Frequency - Transition
- 150MHz
- Power - Max
- 300mW
- Mounting Type
- Through Hole
- Package / Case
- NS-B1
- Supplier Device Package
- NS-B1
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