RN1106MFV(TL3,T)
- Description：
- TRANSISTOR NPN VESM
- Manufacturer：
- Toshiba Semiconductor and Storage
- Buy RN1106MFV(TL3,T) at Hotenda Tech . Hotenda Tech has the largest selection of electronic components, parts and suppliers . All products details and free PDF download of RN1106MFV(TL3,T) can be provided at http://www.hotenda.com/product-tags/RN1106MFV%28TL3%2CT%29.html
Product Information
- Packaging
- Tape & Reel (TR)
- Series
- -
- Transistor Type
- NPN - Pre-Biased
- Current - Collector (Ic) (Max)
- 100mA
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Resistor - Base (R1) (Ohms)
- 4.7k
- Resistor - Emitter Base (R2) (Ohms)
- 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Frequency - Transition
- -
- Power - Max
- 150mW
- Mounting Type
- Surface Mount
- Package / Case
- SOT-723
- Supplier Device Package
- VESM
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