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Transistors (BJT) - Single, Pre-Biased
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DRA2L14Y0L
DRA2L14Y0L
Description:
TRANS PREBIAS PNP 200MW MINI3
Manufacturer:
Panasonic Electronic Components - Semiconductor Products
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DRA2L14Y0L
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DRA2L14Y0L
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Product Information
Category
Transistors (BJT) - Single, Pre-Biased
Packaging
Cut Tape (CT)
Series
-
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
30V
Resistor - Base (R1) (Ohms)
10k
Resistor - Emitter Base (R2) (Ohms)
47k
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
1.2V @ 330µA, 50mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
-
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
Mini3-G3-B
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