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Transistors (BJT) - Single, Pre-Biased
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UNR52AMG0L
UNR52AMG0L
Description:
TRANS PREBIAS NPN 150MW SMINI3
Manufacturer:
Panasonic Electronic Components - Semiconductor Products
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UNR52AMG0L
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UNR52AMG0L
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Product Information
Category
Transistors (BJT) - Single, Pre-Biased
Packaging
Cut Tape (CT)
Series
-
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
80mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1) (Ohms)
2.2k
Resistor - Emitter Base (R2) (Ohms)
47k
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
150MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-85
Supplier Device Package
SMini3-F2
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