PDTD113ZS,126
- Description：
- TRANS PREBIAS NPN 500MW TO92-3
- Manufacturer：
- NXP Semiconductors
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Product Information
- Packaging
- Tape & Box (TB)
- Series
- -
- Transistor Type
- NPN - Pre-Biased
- Current - Collector (Ic) (Max)
- 500mA
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Resistor - Base (R1) (Ohms)
- 1K
- Resistor - Emitter Base (R2) (Ohms)
- 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 70 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max)
- 500nA
- Frequency - Transition
- -
- Power - Max
- 500mW
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package
- TO-92-3
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