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Transistors (BJT) - Single, Pre-Biased
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FJN3313RBU
FJN3313RBU
Description:
TRANS PREBIAS NPN 300MW TO92-3
Manufacturer:
Fairchild Semiconductor
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FJN3313RBU
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FJN3313RBU
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Product Information
Category
Transistors (BJT) - Single, Pre-Biased
Packaging
Bulk
Series
-
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1) (Ohms)
2.2k
Resistor - Emitter Base (R2) (Ohms)
47k
DC Current Gain (hFE) (Min) @ Ic, Vce
68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
-
Frequency - Transition
250MHz
Power - Max
300mW
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
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