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Transistors (BJT) - Single, Pre-Biased
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DTD114ESTP
DTD114ESTP
Description:
TRANS PREBIAS NPN 300MW SPT
Manufacturer:
Rohm Semiconductor
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DTD114ESTP
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DTD114ESTP
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Product Information
Category
Transistors (BJT) - Single, Pre-Biased
Packaging
Tape & Box (TB)
Series
-
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
500mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1) (Ohms)
10k
Resistor - Emitter Base (R2) (Ohms)
10k
DC Current Gain (hFE) (Min) @ Ic, Vce
56 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)
-
Frequency - Transition
200MHz
Power - Max
300mW
Mounting Type
Through Hole
Package / Case
SC-72 Formed Leads
Supplier Device Package
SPT
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