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Discrete Semiconductor Products
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Transistors (BJT) - Single, Pre-Biased
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UNR222200L
UNR222200L
Description:
TRANS PREBIAS NPN 200MW MINI3
Manufacturer:
Panasonic Electronic Components - Semiconductor Products
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UNR222200L
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UNR222200L
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Product Information
Category
Transistors (BJT) - Single, Pre-Biased
Packaging
Tape & Reel (TR)
Series
-
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
500mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1) (Ohms)
4.7k
Resistor - Emitter Base (R2) (Ohms)
4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 100mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 5mA, 10mA
Current - Collector Cutoff (Max)
1µA
Frequency - Transition
200MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
Mini3-G1
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