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Discrete Semiconductor Products
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Transistors (BJT) - Single, Pre-Biased
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UNR42100RA
UNR42100RA
Description:
TRANS PREBIAS NPN 300MW NS-B1
Manufacturer:
Panasonic Electronic Components - Semiconductor Products
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UNR42100RA
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UNR42100RA
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Product Information
Category
Transistors (BJT) - Single, Pre-Biased
Packaging
Cut Tape (CT)
Series
-
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1) (Ohms)
47k
Resistor - Emitter Base (R2) (Ohms)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
150MHz
Power - Max
300mW
Mounting Type
Through Hole
Package / Case
NS-B1
Supplier Device Package
NS-B1
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