English
Russia
Contact us:
sales@hotenda.cn
Home
Product index
Manufacturers
About Us
Quality
Why Hotenda
Contact Us
Shopping Cart
Login
|
Register
Home
»
Product Finder
»
Discrete Semiconductor Products
»
Transistors (BJT) - Single
»
MJD112-1G
MJD112-1G
Description:
TRANS DARL NPN 2A 100V STR IPAK
Manufacturer:
ON Semiconductor
Buy
Buy
MJD112-1G
at Hotenda Tech . Hotenda Tech has the largest selection of electronic components, parts and suppliers . All products details and free PDF download of
MJD112-1G
can be provided at
http://www.hotenda.com/product-tags/MJD112-1G.html
Product Information
Category
Transistors (BJT) - Single
Packaging
Tube
Series
-
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
2A
Voltage - Collector Emitter Breakdown (Max)
100V
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 4A
Current - Collector Cutoff (Max)
20µA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 2A, 3V
Power - Max
1.75W
Frequency - Transition
25MHz
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
I-Pak
Customers Who Bought This Item Also Bought
BSP51
2N3904_J25Z
BC 818K-40 E6327
MMSTA64-7
BC848A-TP
FJX733YTF
Related keywords for MJD112-1G
MJD112-1G price
MJD112-1G distributor
MJD112-1G supplier
MJD112-1G pdf
MJD112-1G data sheet
MJD112-1G datasheet
MJD112-1G pdf datasheet
Download MJD112-1G datasheet
MJD112-1G image
MJD112-1G part
MJD112-1G component
MJD112-1G stock
MJD112-1G inventory
Buy MJD112-1G
×
Close
Hotenda Alert