2SA1955FVBTPL3Z
- Description：
- TRANSISTOR PNP VESM
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- Transistors (BJT) - Single
- Packaging
- Cut Tape (CT)
- Series
- -
- Transistor Type
- PNP
- Current - Collector (Ic) (Max)
- 400mA
- Voltage - Collector Emitter Breakdown (Max)
- 12V
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 10mA, 200mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 300 @ 10mA, 2V
- Power - Max
- 100mW
- Frequency - Transition
- 130MHz
- Mounting Type
- Surface Mount
- Package / Case
- SOT-723
- Supplier Device Package
- VESM
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