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Transistors (BJT) - Single
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MJD112G
MJD112G
Description:
TRANS DARL NPN 2A 100V DPAK
Manufacturer:
ON Semiconductor
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MJD112G
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MJD112G
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Product Information
Category
Transistors (BJT) - Single
Packaging
Tube
Series
-
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
2A
Voltage - Collector Emitter Breakdown (Max)
100V
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 4A
Current - Collector Cutoff (Max)
20µA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 2A, 3V
Power - Max
1.75W
Frequency - Transition
25MHz
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
DPAK-3
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