HN1B01FUGRLFT
- Description：
- TRANSISTOR NPN/PNP US6-PLN
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- Transistors (BJT) - Arrays
- Packaging
- Tape & Reel (TR)
- Series
- -
- Transistor Type
- NPN, PNP
- Current - Collector (Ic) (Max)
- 150mA
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 2mA, 6V
- Power - Max
- 200mW, 210mW
- Frequency - Transition
- 150MHz
- Mounting Type
- Surface Mount
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Supplier Device Package
- US6
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