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Discrete Semiconductor Products
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Transistors (BJT) - Arrays, Pre-Biased
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UMG4N-7
UMG4N-7
Description:
TRANS PREBIAS DUAL NPN SOT353
Manufacturer:
Diodes Incorporated
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UMG4N-7
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UMG4N-7
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Product Information
Category
Transistors (BJT) - Arrays, Pre-Biased
Packaging
Tape & Reel (TR)
Series
-
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1) (Ohms)
10k
Resistor - Emitter Base (R2) (Ohms)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)
-
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
6-TSSOP (5 Lead), SC-88A, SOT-353
Supplier Device Package
SOT-353
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