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RF Transistors (BJT)
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NE851M33-A
NE851M33-A
Description:
TRANSISTOR NPN 2GHZ M33
Manufacturer:
CEL
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NE851M33-A
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NE851M33-A
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Product Information
Category
RF Transistors (BJT)
Packaging
Bulk
Series
-
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
5.5V
Frequency - Transition
4.5GHz
Noise Figure (dB Typ @ f)
1.9dB ~ 2.5dB @ 2GHz
Gain
-
Power - Max
130mW
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 5mA, 1V
Current - Collector (Ic) (Max)
100mA
Mounting Type
Surface Mount
Package / Case
3-SMD, Flat Leads
Supplier Device Package
3-SuperMiniMold (M33)
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