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RF Transistors (BJT)
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NE85619-T1
NE85619-T1
Description:
TRANS NPN 1GHZ SMD
Manufacturer:
CEL
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NE85619-T1
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NE85619-T1
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Product Information
Category
RF Transistors (BJT)
Packaging
Tape & Reel (TR)
Series
-
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
12V
Frequency - Transition
4.5GHz
Noise Figure (dB Typ @ f)
1.4dB ~ 2.2dB @ 1GHz ~ 2GHz
Gain
6.5dB ~ 12.5dB
Power - Max
100mW
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 20mA, 10V
Current - Collector (Ic) (Max)
100mA
Mounting Type
Surface Mount
Package / Case
SOT-523
Supplier Device Package
3-SuperMiniMold (19)
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