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RF Transistors (BJT)
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MDS1100
MDS1100
Description:
TRANS RF BIPO 8750W 100A 55TU1
Manufacturer:
Microsemi Power Products Group
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MDS1100
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MDS1100
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Product Information
Category
RF Transistors (BJT)
Packaging
*
Series
-
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
65V
Frequency - Transition
1.03GHz
Noise Figure (dB Typ @ f)
-
Gain
8.9dB
Power - Max
8750W
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 5A, 5V
Current - Collector (Ic) (Max)
100A
Mounting Type
*
Package / Case
*
Supplier Device Package
*
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