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2003

Description:
TRANS HBT RF BIPOLAR 55BT
Manufacturer:
Microsemi Power Products Group
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2003

Product Information

Category
RF Transistors (BJT)
Packaging
*
Series
-
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
50V
Frequency - Transition
2GHz
Noise Figure (dB Typ @ f)
-
Gain
8.5dB
Power - Max
12W
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 100mA, 5V
Current - Collector (Ic) (Max)
500mA
Mounting Type
*
Package / Case
*
Supplier Device Package
*

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