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Discrete Semiconductor Products
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RF Transistors (BJT)
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MS1001
MS1001
Description:
TRANS RF BIPO 270W 20A M174
Manufacturer:
Microsemi Power Products Group
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MS1001
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MS1001
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Product Information
Category
RF Transistors (BJT)
Packaging
*
Series
-
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
18V
Frequency - Transition
30MHz
Noise Figure (dB Typ @ f)
-
Gain
13dB
Power - Max
270W
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 5A, 5V
Current - Collector (Ic) (Max)
20A
Mounting Type
*
Package / Case
*
Supplier Device Package
*
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