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RF Transistors (BJT)
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MS1007
MS1007
Description:
TRANS RF BIPO 233W 10A M174
Manufacturer:
Microsemi Power Products Group
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MS1007
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MS1007
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Product Information
Category
RF Transistors (BJT)
Packaging
*
Series
-
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
55V
Frequency - Transition
30MHz
Noise Figure (dB Typ @ f)
-
Gain
14dB
Power - Max
233W
DC Current Gain (hFE) (Min) @ Ic, Vce
18 @ 1.4A, 6V
Current - Collector (Ic) (Max)
10A
Mounting Type
*
Package / Case
*
Supplier Device Package
*
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