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Discrete Semiconductor Products
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RF Transistors (BJT)
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MS2206
MS2206
Description:
TRANS RF BIPO 7.5W 1A M115
Manufacturer:
Microsemi Power Products Group
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MS2206
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MS2206
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Product Information
Category
RF Transistors (BJT)
Packaging
*
Series
-
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
20V
Frequency - Transition
1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f)
-
Gain
10dB
Power - Max
7.5W
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 100mA, 5V
Current - Collector (Ic) (Max)
1A
Mounting Type
*
Package / Case
*
Supplier Device Package
*
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