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RF Transistors (BJT)
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MS652S
MS652S
Description:
TRANS RF BIPO 25W 2A M123
Manufacturer:
Microsemi Power Products Group
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MS652S
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MS652S
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Product Information
Category
RF Transistors (BJT)
Packaging
*
Series
-
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
16V
Frequency - Transition
450MHz ~ 512MHz
Noise Figure (dB Typ @ f)
-
Gain
10dB
Power - Max
25W
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 200mA, 5V
Current - Collector (Ic) (Max)
2A
Mounting Type
*
Package / Case
*
Supplier Device Package
*
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